Datasheet STGW50NB60M Datasheet (SGS Thomson Microelectronics)

STGW50NB60M

N-CHANNEL 50A - 600V -TO-247

PowerMESH™ IGBT

TYPE V

CES

V

CE(sat)(25°C)

I

C

STGW50NB60M 600 V < 1.9 V50A

■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)

■ LOW ON-VOLTAGE DROP (V

■ LOW GATE CHARG E

■ HIGH CURRENT CAPABILITY

CESAT

)

DESCRIPTION

Using the lat es t high voltage tech nology bas ed on a
patented strip l ay out, STMicroelectronics has de­signed an advanced family of IGBTs, the Power-

™

MESH

IGBTs, with outstanding performances .
The suffix "M" identifies a family optimized to
achieve very low s aturation on voltage for frequency
applications <10 KHz.

APPLICATIONS

■ MOTOR CONTROL

■ WELDING EQUIPMENTS

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

ECR

V

GE

I

C

I

C

ICM()

P

TOT

T

stg

T

j

Collector-Emitter Voltage (VGS=0)

600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C

100 A

50 A
Collector Current (pulsed) 400 A
Total Dissipation at TC= 25°C

250 W
Derating Factor 2 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(●) Pulsewidthlimitedbysafeoperatingarea

1/9May 2003

STGW50NB60M

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

Rthc-h Thermal Resistance Case-heatsink Typ 0.1 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE= 0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage
Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

VCE= Max Rating, TC= 125 °C
V

=±20V,VCE= 0 ± 100 nA

GE

10

100

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage
Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE=15V,IC=30A@25°C

=15V,IC=30A@100°C

V

GE

VGE=15V,IC=50A@25°C
V

=15V,IC=50A@100°C

GE

= 250 µA

345V

1.3

1.2

1.5

1.9

1.35

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

I

CL

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge

Latching Current V

=15V,IC=18A

CE

=25V,f=1MHz,VGE=0

V

CE

= 480 V, IC=50A,

V

CE

V

=15V

GE

= 480 V , Tj = 125°C

clamp

=10Ω

R

G

22 S

4500

400

70

231

28
97

300 A

µA
µA

V
V
V
V

pF
pF
pF

nC
nC
nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

=480V,IC=50A

V

CC

=10Ω,VGE=15V

R

G

V

= 480 V, IC=50A

CC

R

=10 Ω , VGE=15V

G

Tj = 125°C

45
30

1600

800

2/9

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time

r

Rise Time
Turn-on Current Slope

on

Turn-on Switching Losses

ns
ns

A/µs

µJ

STGW50NB60M

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

c

t

r(Voff

td(

off

t

f

E

(**)

off

E

ts

t

c

t

r(Voff

td(

off

t

f

E

(**)

off

E

ts

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

Cross-over Time Vcc= 480 V, IC= 50 A 450 ns

)

Off Voltage Rise Time

)

Delay Time 410 ns

RGE=10Ω,VGE=15V

130 ns

Fall Time 300 ns
Turn-off Switching Loss 4 mJ
Total Switching Loss 4.1 mJ
Cross-over Time Vcc= 480 V, IC= 50 A 730 ns

)

Off Voltage Rise Time

)

Delay Time Tj = 125 °C 565 ns

RGE=10Ω,VGE=15V

265 ns

Fall Time 440 ns
Turn-off Switching Loss 6.6 mJ
Total Switching Loss 7.1 mJ

3/9

STGW50NB60M

Switching Off Safe Operating AreaThermal Impedance

Output Characteristics

Normalized Gate Threshold Voltage vs Temp. Transconductance

Transfer Characteristics

4/9

STGW50NB60M

Collector-Emitter On Voltagevs Temperature

Gate-Charge vs Gate-Emitter Voltage

Normalized Break-down Voltage vs Temp.Capacitance Variations

Total Switching losses vs Gate Res istance

Total Switching losses vs Temperature

5/9

STGW50NB60M

Collector-Emitter on Voltage vs CurrentTotal Switching losses vs Ic

6/9

STGW50NB60M

Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit

7/9

STGW50NB60M

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º 5º

60º 60º

8/9

STGW50NB60M

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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