Datasheet STD12N06, STD12N05 Datasheet (SGS Thomson Microelectronics)

STD12N05
STD12N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD 12N05 50 V < 0. 15 Ω 12 A
STD 12N06 60 V < 0. 15 Ω 12 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.1 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

IPAK

TO-251

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

1

DPAK

TO-252

(Suffix ”T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

ST D12N05 STD12N06

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 50 60 V

DS

Drain- gate Voltage (RGS=20kΩ)5060V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC12A

I

D

Drain Current (continuous) at Tc=100oC8A

I

D

(•) Drain Current (pulsed) 48 A

Total Di ssipation a t Tc=25oC45W

tot

Derating Factor 0.3 W/
St or a ge Tem perature -65 t o 175

stg

Max. Operating Jun ction T emperature 175

T

j

o
o

o

C
C
C

1/10

STD12N05/STD12N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive

(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

3.33
100

1.5

275

12 A

30 mJ

7mJ

8A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain - s ource
Break d own Volta ge

Zer o G at e V oltage
Drain Current (VGS=0)

Gat e- body Leakage

ID=250µAVGS=0

for STD12 N05
for STD12 N06

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

50
60

1

10

VGS= ± 20 V ± 10 0 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n

VGS=10V ID=6A 0.1 0.15 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

12 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=6A 3 5 S

VDS=25V f=1MHz VGS=0 330

150

40

450
250

60

V
V

µA
µA

pF
pF
pF

2/10

STD12N05/STD12N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=40V ID=12A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAINDIODE

VDD=25V ID=6A
RG=50 Ω VGS=10V

40
80

(see test circuit figure)

210 A/µs
RG=50 Ω VGS=10V
(see test circuit figure)

VDD=40V ID=12A VGS=10V 15

6
5

VDD=40V ID=12A
RGS=50 Ω VGS=10V
(see test circuit figure)

30
40
80

60

120

25 nC

45
60

120

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

12
48

(pulsed)

V

(∗) Forward On Voltage ISD=12A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs
VDD=25V Tj= 150oC

60

0.12

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STD12N05/STD12N06

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance Gate Charge vs Gate-source Voltage

4/10

STD12N05/STD12N06

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Turn-off Drain-source Voltage Slope Cross-over Time

5/10

STD12N05/STD12N06

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STD12N05/STD12N06

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STD12N05/STD12N06

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK) MECHANICAL DATA

STD12N05/STD12N06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD12N05/STD12N06

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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