Datasheet STD10PF06 Datasheet (SGS Thomson Microelectronics)



STD10PF06

P - CHANNEL 60V - 0.18 Ω - 10A TO-252

STripFET POWER MOSFET

TYPE V

DSS

R

DS(o n)

I

D

ST D10PF06 60 V < 0. 20 Ω 10 A

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE

■ APPLICATIONORIENTED

DS(on)

= 0.18 Ω

CHARACTERIZATION

■ ADDSUFFIX ”T4” FORORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ MOTORCONTROL

■ DC-DC& DC-AC CONVERTERS

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

dv/ d t Peak Diode Recover y volta ge s lope 6 V / ns

T

(•) Pulse width limited by safe operating area (1)I
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

April 1999

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gat e Volt age (RGS=20kΩ)60V

DGR

Gate-source Voltage

GS

I

Drain Current (cont inuous) at Tc=25oC10A

D

I

Drain Current (cont inuous) at Tc=100oC7A

D

20 V

±

(•) Drain Current (pulsed) 40 A

Total Dissipation at Tc=25oC40W

tot

Derat ing Fac tor 0.27 W/

Sto rage T emperature -65 t o 175

stg

T

Max. Opera ti ng Junction Tempe r at ure 175

j

≤

10 A, di/dt≤300A/µs, V

SD

DD

≤

V

(BR)DSS,Tj

≤

T

JMAX

o

C

o

C

o

C

1/8

STD10PF06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature For So lder ing Purpos e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse A valanche E ner gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

3.75
100

1.5

275

10 A

50 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA23.44V
Sta t ic Dr ain -s ource O n

VGS=10V ID= 5 A 0.18 0.20

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on )max

10 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input C apac i t ance

iss

Out put Capacit ance

oss

Reverse T r ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=5A 2 5 S

VDS=25V f=1MHz VGS= 0 850

230

75

µ
µA

Ω

pF
pF
pF

A

2/8

STD10PF06

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

Tur n-on Delay T ime
Rise T i me

t

r

VDD=30V ID=6A
R

=4.7

G

Ω

VGS=10V

20
40

(Resis t iv e Load, see f ig. 3)

Q
Q
Q

Tot al G at e Char ge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=48V ID=12A VGS=10V 16

4
6

21 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=30V ID=6A

=4.7 Ω VGS=10V

R

G

40
10

(Resis t iv e Load, see f ig. 3)

t

r(Voff)

t

t

Off-volt ag e Rise Time
Fall T ime

f

Cross-over Time

c

VDD=48V ID=12A

=4.7 Ω VGS=10V

R

G

(Indu ct iv e L oad , see fig . 5)

10
17
30

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

10
40

(pulsed)

(∗)ForwardOnVoltage ISD=10A VGS=0 2.5 V

Reverse Re covery

rr

Time
Reverse Re covery

rr

ISD= 12 A di/dt = 100 A /µs

=30V Tj=150oC

V

DD

(see test circuit, fig. 5)

100

260
Charge
Reverse Re covery

5.2

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

SafeOperating Area ThermalImpedance

3/8

STD10PF06

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STD10PF06

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistance vs Temperature

5/8

STD10PF06

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/8

TO-252 (DPAK) MECHANICAL DATA

STD10PF06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

7/8

STD10PF06

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licenseis
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice. Thispublication supersedes and replaces all information previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devicesor systems without expresswritten approvalof STMicroelectronics.

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