Page 1
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
N-Channel
N-Channel
N-Channel
N-Channel
2 0V/ 0 .95 A , R DS(ON) = 380 m Ω (Typ.)
@V GS = 4.5 V
2 0V/ 0 .75 A, R DS(ON) = 450 m Ω
@V GS = 2 .5V
2 0V/ 0 .65 A, R DS(ON) = 800 m Ω
@V GS = 1.8 V
P-Channel
P-Channel
P-Channel
P-Channel
- 2 0V/- 1.0 A, R DS(ON) = 520 m Ω (Typ.)
@V GS = - 4.5 V
- 2 0V/- 0.8 A, R DS(ON) = 700 m Ω
@V GS = - 2 .5V
- 2 0V/- 0.7 A, R DS(ON) = 700 m Ω
@V GS = - 1.8 V
Super high density cell design for
extremely low R DS(ON)
Exceptional on-resistance and maximum
DC current capability
SO T-363(SC-70-6L) package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
The STC 6332 is the N & P-Channel enhancement mode power field effect transistor
using high cell density DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. Th is device is particularly suited for low voltage application such as
notebook computer power management and other batter y powered circuits, where
high-side switching, low in-line power loss and resistance to transient are needed .
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SO
T-363/SC-70-6L
SO
T-363/SC-70-6L
SO
SO T-363/SC-70-6L
T-363/SC-70-6L
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PART
PART
PART
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
MARKING
MARKING
MARKING
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Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 2
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
N
N
N
N P
P
P
P
Unit
Unit
Unit
Unit
Drain-Source Voltage
V
DSS
2 0
- 2 0
V
Gate-Source Voltage
V
GSS
±12±
12
V
Continuous Drain Current
(TJ=150
℃
)
T A =25 ℃
TA= 8 0
℃
I
D
1.2
0.9
- 1.0
- 0.7
A
Pulsed Drain Current
IDM4
- 3
A
Continuous Source Current
(Diode Conduction)
IS0.6
- 0.6
A
Power Dissipation
T A =25 ℃
TA=70
℃
P
D
0.3
0.19
W
Operation Junction Temperature
TJ-55/ 150
℃
Storgae Temperature Range
T
STG
-55/150
℃
Thermal Resistance-Junction
to Ambient
T ≦ 10S ec
Sready State
R
θ
JA
360
400
360
400
℃
/W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 3
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS
=0V,ID= 250 uA
V
GS
=0V,ID=- 250 uA
NP2 0
- 2 0
V
Gate Threshold Voltage
V
GS(th)
V
DS
=VGS,ID=250uA
V
DS
=VGS,ID=-250uA
NP0. 35
-0. 35
1.0
- 1.0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=
±
12 V
V
DS
=0V,V
GS
=
±
12 V
NP100
- 100
nA
Zero Gate Voltage Drain
Current
I
DSS
TJ=55
℃
V
DS
= 20 V,V
GS
=0V
V
DS
=- 20 V,V
GS
=0V
NP1
-1
uA
V
DS
= 20 V,V
GS
=0V
V
DS
=- 20 V,V
GS
=0V
NP5
-5
On-State Drain Current
I
D(on)
V
DS
≧
4.5 V,V
GS
= 5 V
V
DS
≦ - 4.5 V,V
GS
=- 5 V
NP2
- 2
0
A
Drain-source On-Resistance
R
DS(on)
V
GS
=
4.5 V, ID= 0.95 A
V
GS
=- 4.5 V,ID=- 1.0 A
N
P
0. 26
0. 42
0.38
0.52
Ω
V
GS
=
2 .5V, ID= 0.75 A
V
GS
=- 2 .5V,ID=- 0.8 A
N
P
0. 32
0. 58
0.45
0.70
V
GS
=
1 . 8 V, ID= 0.65 A
V
GS
=- 1 . 8 V,ID=- 0.5 A
N
P
0.42
0.75
0.80
0.95
Forward Tran Conductance
g
fs
V
DS
=1 0 V,ID= 1.2 A
V
DS
=-1 0 V,ID=- 1.0 A
NP2.6
1.5
S
Diode Forward Voltage
V
SD
IS= 0.5 A,V
GS
=0V
IS=- 0.5 A,V
GS
=0V
NP0.8
-0.8
1.2
-1. 2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Q
g
N-Channel
N-Channel
N-Channel
N-Channel
V
DS
=1 0 V,V
GS
= 4.5 V
I
D
≡
1.2 A
P-Channel
P-Channel
P-Channel
P-Channel
V
DS
=-1 0 V,V
GS
=- 4.5 V
I
D
≡
- 1.0 A
NP1 .2
1.1
2.0
1.8
nC
Gate-Source Charge
Q
gs
NP0.2
0.3
Gate-Drain Charge
Q
gd
NP0.3
0.2
Turn-On Time
t
d(on)
tr
N-Channel
N-Channel
N-Channel
N-Channel
V
DS
=1 0 V,RL= 20
Ω
ID= 0.5 A,R
GEN
=6
Ω
V
GEN
= 4.5 V
P-Channel
P-Channel
P-Channel
P-Channel
V
DS
=-1 0 V,RL= 20
Ω
ID=- 0.5 A,R
GEN
=-6
Ω
V
GEN
= -4.5 V
NP151825
30
nS
NP202530
4 0
Turn-Off Time
t
d(off)
tf
NP252040
3 0
NP12122 0
20
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 4
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS (N
(N
MOS)
(N
MOS)
(N MOS)
MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 5
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS (N
(N
MOS)
(N
MOS)
(N MOS)
MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 6
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
YPICAL
YPICAL
YPICAL
YPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS (P
(P
MOS)
(P
MOS)
(P MOS)
MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 7
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS (P
(P
MOS)
(P
MOS)
(P MOS)
MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 8
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
SOP-8
SOP-8
SOP-8
SOP-8 PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 9
STC
STC
STC
STC 6332
6332
6332
6332
N&P Pair Enhancement Mode MOSFET
0.95 A / - 1 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC 6332 200 9 . V1
Page 10
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