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STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
DESCRIPTION
The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
N-Channel
DS(ON)
z 30V/6.8A, R
@V
z 30V/5.6A, R
@V
= 34mΩ
GS = 10V
DS(ON)
= 46mΩ
GS = 4.5V
P-Channel
DS(ON)
z -30V/-6.2A, R
@V
z -30V/-4.6A, R
@V
= 60mΩ
GS = -10V
DS(ON)= 80mΩ
GS = - 4.5V
z Super high density cell design for
DS(ON)
extremely low R
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package
ORDERING INFORMATION
Part Number Package Part Marking
STC4539S8RG SOP-8 STC4539
STC4539S8TG SOP-8 STC4539
※ Process Code : A ~ Z ; a ~ z
※ STC4539S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STC4539S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 2
STC4539
N&P Pair Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
6.8A / -6.2A
Parameter Symbol
N P
Typical
Unit
Drain-Source Voltage V
Gate-Source Voltage V
T
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM 30 -30 A
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range T
Thermal Resistance-Junction
to Ambient
A=25℃
T
=70℃
A
T
A=25℃
T
=70℃
A
T≦10Sec
Sready State
30 -30 V
DSS
±
GSS
I
D
2.3 -2.3 A
I
S
P
D
-55/150
STG
RθJA
20
6.8
5.6
2.5
1.6
50
80
±
20
-6.2
-4.6
2.8
1.8
52
80
W
℃
℃
℃
V
A
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 3
STC4539
N P
N P
P
P
P
N P
N P
N P
N P
P
P
N P
P
P
P
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Tran Conductance
V
(BR)DSS
GS(th)
GSS
I
DSS
TJ=55
D(on)
DS(on)
g
fs
Diode Forward Voltage VSD
Condition Min Typ Max Unit
VGS=0V,ID=250uA
=0V,ID=-250uA
V
GS
VDS=VGS,ID=250 uA
VDS=VGS,ID=-250uA
=0V,VGS=±20V
V
DS
V
=0V,VGS=±20V
DS
VDS=24V,VGS=0V
=-24V,VGS=0V
V
DS
℃
VDS=24V,VGS=0V
=-24V,VGS=0V
V
DS
≧
V
5V,VGS=10V
DS
≦
-5V,V
V
DS
=
V
10V, ID=6.8A
GS
V
=-10V,ID=-5.7A
GS
=
V
4.5V, ID=5.6A
GS
V
=-4.5V,ID=-4.4A
GS
V
=15V,ID=5.9A
DS
=-15V,ID=-5.9A
V
DS
I
=1.7A,VGS=0V
S
=-1.7A,VGS=0V
I
S
=-10V
GS
30
-30
1.0
-1.0
N
N
N
V
3.0
-3.0
±
100
±
100
V
nA
1
-1
5
uA
-5
30
-30
0.026
0.034
0.045
0.060
0.036
0.045
0.060
0.080
15
9
N
0.8
-0.8
1.2
-1.2
A
Ω
S
V
Dynamic
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
N-Channel
=15V,VGS=10V
V
DS
≣
5.9A
I
D
P-Channel
=-15V,VGS=-10V
V
DS
≣
5.0A
I
D
N-Channel
V
=15V,RL=150
Turn-On Time
t
d(on)
tr
DD
ID=1A,V
R
G
GEN
=6Ω
P-Channel
=-15V,RL=150
V
Turn-Off Time
t
d(off)
tf
DD
ID=-1A,V
R
G
GEN
=6Ω
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Ω
=10V
Ω
=-10V
N
P
N
P
N
N
N
N
Copyright © 2007, Stanson Corp.
13
15
2.3
4.0
2.0
2.0
6.0
7.0
14
10
30
40
20
5
20
25
12
15
25
20
60
80
10
40
STC4539 2007. V1
nC
nS
Page 4
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (N MOS)
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 5
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (N MOS)
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 6
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
6.8A / -6.2A
STC4539 2007. V1
Page 7
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (P MOS)
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 8
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (P MOS)
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 9
STC4539
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (P MOS)
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 10
STC4539
N&P Pair Enhancement Mode MOSFET
SOP-8 PACKAGE OUTLINE
6.8A / -6.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
Page 11
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