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®
HIGH VOLTAGE FAST-SWITCHING
Ordering Code Marking Package / Shipment
STBV45 BV45 TO-92 / Bulk
STBV45-AP BV45 TO-92 / Ammopack
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT- TO- LO T SPR E AD FO R
RELIABLE OPERATION
■ VERY HIGH SWI TCHING SPEED
STBV45
NPN POWER TRANSISTOR
APPLICATIONS:
■ COMPACT FLUO RESCENT LAMPS (CF LS)
TO-92
Bulk
TO-92
Ammopack
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
INTERNAL SCHEMATIC DIAGRAM
while maintaining the wide RBSOA.
The STBV series is designed for use in Compact
Fluorescent Lamps.
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 600 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 0.75 A
I
C
Collector Peak Current (tp < 5 ms) 1.5 A
CM
Base Current 0.4 A
I
B
Base Peak Current (tp < 5 ms) 0.75 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 0.95 W
amb
o
C
o
C
March 2003
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STBV45
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max 131.6
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
= 600 V 250 µA
V
CE
= 9 V 1 mA
V
EB
I
= 1 mA 400 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 0.2 A V
FE
INDUCTIVE LOAD
Fall Time
t
f
IC = 0.2 A IB = 40 mA
I
= 0.3 A IB = 75 mA
C
I
= 0.4 A IB = 135 mA
C
IC = 0.2 A IB = 40 mA
I
= 0.3 A IB = 75 mA
C
I
= 0.4 A V
C
IC = 0.2 A V
I
= -IB2 = 40 mA L = 3 mH
B1
= 5 V
CE
= 5 V
CE
clamp
0.2
0.3
0.4
10
5
= 300 V
0.3 µs
0.5
1
1.5
1
1.2
30
20
(see figure 1)
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
V
V
V
V
V
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STBV45
Safe Operating Are a
Collector Emitter Sat uration Volt a ge
Derating Curve
Base Emitter Satur ation Voltage
DC Current Gain
DC Current Gain
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STBV45
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
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TO-92 MECHANICA L DAT A
STBV45
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
mm inch
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STBV45
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM.
A1 4.80 0.189
T 3.80 0.150
T1 1.60 0.063
T2 2.30 0.091
d 0.48 0.019
P0 12.50 12.70 12.90 0.492 0.500 0.508
P2 5.65 6.35 7.05 0.222 0.250 0.278
F1,F2 2.44 2.54 2.94 0.096 0.100 0.116
delta H -2.00 2.00 -0.079 0.079
W 17.50 18.00 19.00 0.689 0.709 0.748
W0 5.70 6.00 6.30 0.224 0.236 0.248
W1 8.50 9.00 9.25 0.335 0.354 0.364
W2 0.50 0.020
H 18.50 20.50 0.728 0.807
H0 15.50 16.00 16.50 0.610 0.630 0.650
H1 25.00 0.984
D0 3.80 4.00 4.20 0.150 0.157 0.165
t 0.90 0.035
L 11.00 0.433
I1 3.00 0.118
delta P -1.00 1.00 -0.039 0.039
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
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STBV45
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
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