Datasheet STBV32 Datasheet (SGS Thomson Microelectronics)



HIGH VOLTAGE FAST-SWITCHING

■ ST13003SILICONIN TO-92 PACKAGE

■ MEDIUMVOLTAGECAPABILITY

■ LOW SPREADOF DYNAMICPARAMETERS

■ MINIMUMLOT-TO-LOT SPREAD FOR

RELIABLEOPERATION

■ VERYHIGH SWITCHING SPEED

APPLICATIONS:

■ ELECTRONICBALLASTSFOR

FLUORESCENT LIGHTING

STBV32

NPN POWER TRANSISTOR

DESCRIPTION

The device is manufactured using high voltage

TO-92

Multi Epitaxial Planar technology for high
switchingspeeds andmedium voltage capability.

It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The STBV32 is designed for use in compact

INTERNAL SCHEMATIC DIAGRAM

fluorescentlamp application.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V
V

I

I
P

T

Collect or-Emit t e r Voltage ( VBE= 0) 700 V

CES

Collect or-Emit t e r Voltage ( IB= 0) 400 V

CEO

Emitter-Base Vol tage (IC=0) 9 V

EBO

Collect or Current 1.5 A

I

C

Collect or Peak Cu r rent (tp<5ms) 3 A

CM

Base Cu rr ent 0.75 A

I

B

Base P eak Cu rrent (tp<5ms) 1.5 A

BM

Tot al Dissipation at Tc=25oC1.1W

tot

Storage Temperature -65 to 150

stg

Max. Ope r ating Junc t io n Tempe rature 150

T

j

o

C

o

C

February 2000

1/7

STBV32

THERMAL DATA

R

thj-case

Ther mal Resist an c e Junct io n-c a s e Max 112

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Un it

I

CEV

I

EBO

V

CEO(sus)

V

CE(sat)

V

BE(sat)

h

FE

Collec t or Cut -off
Current (V

=-1.5V)

BE

Emitter Cut-off
Current (I

C

=0)

∗ Co llector-E m itter

Sust aining Voltage

=0)

(I

B

∗ Collector-E mitter

Saturation Voltage

∗ Base-Emitt er

Saturation Voltage

= 700V

V

CE

V

= 700V Tj= 125oC

CE

V

=9V 1 mA

EB

I

=10mA

C

L=25mH

IC=0.5A IB=0.1A

=1A IB=0.25A

I

C

=1.5A IB=0.5A

I

C

IC=0.5A IB=0.1A

=1A IB=0.25A

I

C

∗ DC C ur rent Gain IC=0.5A VCE=2V

I

=1A VCE=2V

C

1
5

400 V

0.5
1
3

1.0

1.2

8
5

35
25

RESI STIVE LOAD

t

Rise T ime

r

t

s

t

f

Storage Ti me
Fall Time

INDUCTIV E LOAD

t

∗

Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.

s

Storage Ti me

=1A VCC=125V

I

C

=0.2A IB2=-0.2A

I

B1

=25µs

T

p

IC=1A IB1=0.2A

=-5V L=50mH

V

BE

=300V

V

clamp

0.8 µs

1.0

4.0

0.7

mA
mA

V
V
V

V
V

µs
µs
µs

2/7

STBV32

Safe Operating Area

DCCurrent Gain

DeratingCurve

DC Current Gain

CollectorEmitterSaturationVoltage

BaseEmitter Saturation Voltage

3/7

STBV32

InductiveFall Time InductiveStorage Time

ReverseBiased SOA

4/7

Figure1: Inductive Load Switching TestCircuits.

Figure2: ResistiveLoad Switching Test Circuits.

STBV32

5/7

STBV32

DIM.

A 4.58 5.33 0.180 0.210

B 4.45 5.2 0.175 0.204

C 3.2 4.2 0.126 0.165

D 12.7 0.500

E 1.27 0.050

TO-92 MECHANICAL DATA

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

F 0.4 0.51 0.016 0.020

G 0.35 0.14

6/7

STBV32

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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