Datasheet STW9NK70Z, STP9NK70ZFP, STP9NK70Z, STB9NK70Z, STB9NK70Z-1 Datasheet (SGS Thomson Microelectronics)

STP9NK70Z - STP9NK70ZFP

STB9NK70Z - STB9NK70Z-1 - STW9NK70Z

N-CHANNEL 7 00V - 1Ω - 7.5A TO-2 20/FP/D2PAK/I2PAK/TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z

■ TYPICAL R

■ EXTREMELY HIGH dv /d t C APABILITY

■ IMPROVED ESD CAPABILITY

■ 100% AVALANCHE RATED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ VERY GOOD MANUFACTURING

700 V
700 V
700 V
700 V
700 V

(on) = 1.0 Ω

DS

DSS

R

DS(on)

< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω

I

D

7.5 A

7.5 A

7.5 A

7.5 A

7.5 A

Pw

115 W

35 W
115 W
115 W
156 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such s eries com ple­ments ST full range of high voltage MOSFE Ts in­cluding revolutionary MDmesh™ products.

3

2

TO-220 TO-220FP

1

TO-247

3

I2PAK

3

2

1

D

2

PAK

1

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPP L I ES,

ADAPTORS AND PFC

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP9NK70Z P9NK70Z TO-220 TUBE

STP9NK70ZFP P9NK70ZFP TO-220FP TUBE

STB9NK70Z B9NK70Z

STB9NK70ZT4 B9NK70Z

STB9NK70Z-1 B9NK70Z-1

STW9NK60Z W9NK70Z TO-247 TUBE

2

PAK

D

2

PAK

D

2

I

PAK

(ONLY UNDER REQUEST)

TUBE

TAPE & REEL

TUBE

1/14April 2002

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

TO-220 /

2

PAK / I2PAK

D

V

I

DM

P

V

DGR

V

I
I

TOT

DS

GS
D
D

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

(l)

Drain Current (pulsed) 30 30 (*) 30 A
Total Dissipation at TC = 25°C

7.5 7.5 (*) 7.5 A

4.7 4.7 (*) 4.7 A

115 35 156 W

Derating Factor 0.92 0.28 1.25 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

(l) Pulse wi dth limited by saf e operating area
(1) I

≤7.5A, di/dt ≤200 µA, VDD ≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

TO-220FP TO-247

700 V
700 V

-55 to 150

-55 to 150

°C
°C

THERMA L D ATA

TO-220

2

PAK

I

Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 °C/W

Rthj-pcb

Thermal Resistance Junction-pcb Max

(When mounted on minimum Footprint)

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 30 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

2

D

TO-220FP TO-247

PAK

30 °C/W

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

7.5 A

230 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.

2/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

I

V

R

DSS

GSS

GS(th)
DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 15 V, ID= 4 A 5.3 S

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID = 1 mA, VGS = 0 700 V

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C

V

= ± 20V ±10 µA

GS

V

= VGS, ID = 100µA

DS

3 3.75 4.5 V

1

50

VGS = 10V, ID = 4 A 1.0 1.2 Ω

= 25V, f = 1 MHz, VGS = 0 1370

V

DS

143

32

VGS = 0V, VDS = 0V to 560 V 90 pF

VDD = 350 V, ID = 4 A
RG= 4.7Ω VGS = 10 V

22
17

(Resistive Load see, Figure 3)

= 560V, ID = 8 A,

V

DD

VGS = 10V

48
10

68

27

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD = 350 V, ID = 4 A
RG=4.7Ω VGS = 10 V

45
13

(Resistive Load see, Figure 3)

t

r(Voff)

t

t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

= 350 V, ID = 8 A,

V

DD

RG=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

11

7

19

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

2. Pulse width li mited by safe operating ar ea.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

ISD = 7.5 A, VGS = 0
I

SD

V
(see test circuit, Figure 5)

= 8 A, di/dt = 100A/µs

= 25V, Tj = 150°C

DD

570

5.2

19.5

when VDS increase s fr om 0 to 80%

oss

7.5
30

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

Safe Operating Area For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220FP

Safe Operating Area For TO-247

4/14

Thermal Impedance For TO - 24 7

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

Capacitance VariationsGate Charge vs Gate-source Voltage

5/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/14

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

2

D

PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º8º

3

10/14

1

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

11/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

12/14

P025P

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

13/14

STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.

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14/14