Datasheet STP9NK60Z, STP9NF60ZFP, STB9NK60Z, STB9NK60-1 Datasheet (SGS Thomson Microelectronics)

1/13June 2002

STP9NK60Z - STP9NK60ZFP

STB9NK60Z - STB9NK60Z-1

N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

■ TYPICAL RDS(on) = 0.85 Ω

■ EXTREMELY HIGH dv /d t C APABILITY

■ IMPROVED ESD CAPABILITY

■ 100% AVALANCHE RATED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC C APACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series c om pl e­ments ST full range of high voltage MOSFE Ts in­cluding revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUP PLIE S,

ADAPTORS AND PFC

ORDERING INFORMATION

TYPE V

DSS

R

DS(on)

I

D

Pw

STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60Z-1

600 V
600 V
600 V
600 V

< 0.95

Ω

< 0.95 Ω
< 0.95 Ω
< 0.95 Ω

7 A
7 A
7 A
7 A

125 W

30 W
125 W
125 W

SALES TYPE MARKING PACKAGE PACKAGING

STP9NK60Z P9NK60Z TO-220 TUBE

STP9NK60ZFP P9NK60ZFP TO-220FP TUBE

STB9NK60Z B9NK60Z

D

2

PAK

TUBE

STB9NK60ZT4 B9NK60Z

D

2

PAK

TAPE & REEL

STB9NK60Z-1 B9NK60Z-1

I

2

PAK

TUBE

TO-220 TO-220FP

1

2

3

1

2

3

1

3

I2PAK

D

2

PAK

INTERNAL SCHEMATIC DIAGRAM

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

2/13

ABSOLUTE MAXIMUM RATINGS

(l) Pulse wi dth limited by safe operating area
(1) I

SD

≤7A, di/dt ≤200 µA, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX.

(*) Limited only by maximum temperature allowed

THERMA L D ATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.

Symbol Parameter Value Unit

TO-220 /

D

2

PAK / I2PAK

TO-220FP

V

DS

Drain-source Voltage (VGS = 0)

600 V

V

DGR

Drain-gate Voltage (RGS = 20 kΩ)

600 V

V

GS

Gate- source Voltage ± 30 V

I

D

Drain Current (continuous) at TC = 25°C

7 7 (*) A

I

D

Drain Current (continuous) at TC = 100°C

4.4 4.4 (*) A

I

DM

(l)

Drain Current (pulsed) 28 28 (*) A

P

TOT

Total Dissipation at TC = 25°C

125 30 W

Derating Factor 1 0.24 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

Insulation Withstand Voltage (DC) - 2500 V

T

j

T

stg

Operating Junction Temperature
Storage Temperature

-55 to 150

-55 to 150

°C
°C

TO-220

I

2

PAK

D

2

PAK

TO-

220FP

Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W

Rthj-pcb

Thermal Resistance Junction-pcb Max

(When mounted on minimum Footprint)

30 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

j

max)

7A

E

AS

Single Pulse Avalanche Energy
(starting T

j

= 25 °C, ID = IAR, VDD = 50 V)

235 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open Drain) 30 V

3/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pu l sed: Pulse duration = 300 µs, duty cyc l e 1. 5 %.

2. Pul se width limi te d by safe oper at i ng area.

3. C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when VDS increase s fr om 0 to 80%

V

DSS

.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

ID = 1 mA, VGS = 0 600 V

I

DSS

Zero Gate Voltage
Drain Current (V

GS

= 0)

V

DS

= Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA
µA

I

GSS

Gate-body Leakage
Current (V

DS

= 0)

V

GS

= ± 20V ±10 µA

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 100µA

3 3.75 4.5 V

R

DS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 3.5 A 0.85 0.95

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

(1) Forward Transconductance VDS = 15 V, ID= 3.5 A 5.3 S

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

DS

= 25V, f = 1 MHz, VGS = 0 1110

135

30

pF
pF
pF

C

oss eq.

(3) Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 480 V 72 pF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Delay Time
Rise Time

VDD = 300 V, ID = 3.5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

19
17

ns
ns

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

DD

= 480 V, ID = 7 A,

VGS = 10V

38

7

21

53

nC
nC
nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

VDD = 300 V, ID = 3.5 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

43
15

ns
ns

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time
Cross-over Time

V

DD

= 300 V, ID = 7 A,

R

G

=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

11

8

20

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

(2)

Source-drain Current
Source-drain Current (pulsed)

7

28

A
A

VSD (1)

Forward On Voltage

ISD = 7 A, VGS = 0

1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

I

SD

= 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)

480

3.5

14.5

ns

µC

A

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

4/13

Thermal Impedance For TO-220/D2PAK/I2PAK

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D2PAK/I2PAK

Thermal Impedance For TO-220FP

Output Characteristics

Transfer Characteristics

5/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

Normalized On Resistance vs Temperatur e

Capacitance VariationsGate Charge vs Gate-source Voltage

Static Drain-source On ResistanceTransconductanc e

Normalized Gate Threshold Volta ge vs Temp.

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

6/13

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics

7/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

8/13

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

9/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

L5

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

10/13

1

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126
R 0.4 0.015

V2 0º8º

D

2

PAK MECHANICAL DATA

3

11/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

L

L1

B2

B

D

E

A

C2

C

A1

L2

e

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

12/13

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

13/13

STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1

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