Page 1
STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK
PowerMesh™II MOSFET
TYPE V
STB9NC60
STB9NC60-1
■ TYPICAL R
■ EXTREMELY HIGH dv/d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
600 V
600 V
(on) = 0.6 Ω
R
DS(on)
< 0.75 Ω
< 0.75 Ω
I
D
9.0 A
9.0 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
1
2
1
D2PAK I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
(1)
j
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
9A
5.7 A
Drain Current (pulsed) 36 A
Total Dissipation at TC = 25°C
125 W
Derating Factor 1.0 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V
– 55 to 150 °C
, Tj ≤ T
(BR)DSS
JMAX
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
(•)Pu l se width limite d by safe operat i ng area
1/10February 2002
Page 2
STB9NC60 / STPBNC60-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
9A
850 mJ
ID = 250 µA, VGS = 0 600
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
V
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4.5 A
234V
0.6 0.75 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =20 V , ID=4.5A 9 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 205 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1420 pF
35 pF
2/10
Page 3
STB9NC60 / STPBNC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time VDD = 300V, ID = 4.5 A
RG=4.7Ω VGS = 10V
t
r
Q
g
Q
gs
Q
gd
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 4.5 nC
Gate-Drain Charge 31 nC
(see test circuit, Figure 3)
V
= 480V, ID = 9.0 A,
DD
V
= 10V
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD = 300 V, ID = 4.5 A
R
= 4.7Ω VGS = 10 V
G
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 480V, ID = 9.0 A,
V
DD
RG= 4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
(1)
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Puls e duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 9.0 A
(2)
Source-drain Current (pulsed) 36 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 4.7 µC
ISD = 9 A, VGS = 0
I
= 9 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Reverse Recovery Current 15.5 A
20 ns
55 77 nC
64
32
19
13
32
1.6 V
600 ns
ns
ns
ns
ns
ns
Thermal ImpedanceSafe Operating Area
3/10
Page 4
STB9NC60 / STPBNC60-1
Output Characteristics Transfer Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transconductance
Capacitance Variations
4/10
Page 5
STB9NC60 / STPBNC60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
Page 6
STB9NC60 / STPBNC60-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/10
Page 7
STB9NC60 / STPBNC60-1
2
D
PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
3
7/10
1
Page 8
STB9NC60 / STPBNC60-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.0 27 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.1 37 0.149
L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
8/10
C2
B2
B
e
E
L1
L2
D
L
P011P5/E
Page 9
STB9NC60 / STPBNC60-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0 0 98 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
9/10
Page 10
STB9NC60 / STPBNC60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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