Page 1
STB9NC60
N - CHANNEL 600V - 0.5Ω -9A D2PAK/I2PAK
PowerMESHII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB9NC60 600 V < 0 .75 Ω 9.0 A
ν TYPICAL R
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DS(on)
= 0.5 Ω
3
3
2
1
1
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
I2PAK
TO-262
(Suffix ”-1”)
D2PAK
TO-263
(Suffix ”T4”)
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES(SMPS)
ν DC-AC CONVERTERS FOR WELDING
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIESAND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
Drain-source Voltage (VGS=0) 600 V
DS
V
Drain- gate Voltage (RGS=20kΩ)
DGR
Gate-source Voltage ± 30 V
V
GS
I
Drain Current (continuous) at Tc=25oC9.0A
D
I
Drain Current (continuous) at Tc= 100oC5.7A
D
I
(•) Drain Current (pulsed) 36 A
DM
P
Total Dissipation at Tc=25oC125W
tot
Derating Factor 1.0 W/oC
dv/dt(
1) Pe ak Diode Recovery voltage slope 4.5 V/ns
T
Storage Temperature -65 to 150
stg
T
Max. Operating JunctionTemperature 150
j
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 9A, di/dt ≤ 200A/µs, VDD≤ V
600 V
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
January2000
1/9
Page 2
STB9NC60
THERMAL DATA
R
R
R
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
Thermal R esistance Junction-case Max 1.0
thj-case
Thermal Resistance Junction-ambient Max
thj-amb
Thermal Resistance Case-sink Typ
thc-sink
Maximum Lead Temperature For Soldering Purpose
T
l
I
AvalancheCurrent, Repetitive or Not-Repetitive
AR
(pulse width limited by T
Single Pulse Avalanche En ergy
E
AS
(startin g T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
9A
850 mJ
o
o
o
C/W
C/W
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Vo ltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
= 250 µAVGS=0
I
D
V
DS
V
=0)
DS
V
GS
=MaxRating
= Max Rating Tc=125oC
= ± 30 V ± 100 nA
600 V
150µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate ThresholdVoltage
Static Drain-source On
V
DS=VGSID
VGS= 10V ID= 4.5 A 0.6 0.75 Ω
Resistance
On State Drai n Current VDS>I
VGS=10V
= 250 µA
D(on)xRDS(on)max
234V
9.0 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Transconductance
C
Input Capacitance
iss
Output Capacitance
C
oss
Reve rse Tra n s fe r
C
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=4.5A 10 S
VDS=25V f=1MHz VGS= 0 1400
196
31
µA
pF
pF
pF
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Page 3
STB9NC60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Turn -on D elay Time
t
d(on)
t
Rise Time
r
Q
Total Gate Charge
g
Gate-Source Charge
Q
gs
Gate-D rain Charge
Q
gd
VDD=300V ID=4.5A
R
=4.7 Ω VGS=10V
G
(Resistive Load, see fig. 3)
VDD= 480 V ID=9.0A VGS=10V 55
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
t
r(Voff)
t
t
Turn -of f D e la y T ime
Fall Time
f
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
VDD=300V ID=4.5A
R
=4.7 Ω VGS=10V
G
(Resistive Load, see fig. 3)
VDD=480V ID=9.0A
=4.7 Ω VGS=10V
R
G
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Source-drain Current
I
SD
I
(•)
SDM
V
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=9A VGS=0 1.6 V
SD
t
Reverse R ecovery
I
rr
Q
RRM
rr
Time
Reverse R ecovery
Charge
Reverse R ecovery
Current
= 9 A di/dt = 100 A/µs
I
SD
= 100 V Tj= 150oC
V
DD
(see test circuit, fig. 5)
20
16
77 nC
4.5
31
64
32
19
13
32
9.036A
600
4.7
15.5
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
ns
µC
A
(∗) Pulsed: Pulse duration= 300µs, duty cycle1.5 %
(•) Pulsewidth limited by safeoperating area
Safe Operating Area ThermalImpedance
3/9
Page 4
STB9NC60
Output Characteristics
Transconductance
Transfer Characteristics
StaticDrain-source On Resistance
Gate Charge vsGate-source Voltage
4/9
CapacitanceVariations
Page 5
STB9NC60
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
NormalizedOn Resistance vs Temperature
5/9
Page 6
STB9NC60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching TimesTest Circuits For
ResistiveLoad
Fig. 2: Unclamped Inductive Waveform
Fig.4: Gate Charge test Circuit
Fig. 5: TestCircuitFor Inductive Load Switching
And Diode RecoveryTimes
6/9
Page 7
TO-262 (I2PAK) MECHANICAL DATA
STB9NC60
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.1 81
A1 2.49 2.69 0. 098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.0 54
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.0 23
C2 1. 21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3. 48 3.78 0.137 0.149
L2 1. 27 1.4 0.050 0.055
mm inch
CA1
A
C2
B2
B
e
E
L1
L2
D
L
P011P5/C
7/9
Page 8
STB9NC60
TO-263 (D2PAK) MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.1 81
A1 2.49 2.69 0. 098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.0 23
C2 1. 21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.8 5 0.590 0.624
L2 1. 27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
8/9
L
D
L3
B2
B
A1
C
G
P011P6/C
Page 9
STB9NC60
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granted by implication or othe rwiseunder any patentor patent rights of STMicroele ctronics. Specificationmentioned in this publicationare
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are not authorizedfor use as criticalcomponents in life suppor tdevices or syste mswithout express writtenapprova lof STMicroele ctronics.
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