Page 1
STB9NB60
N - CHANNEL 600V- 0.7Ω -9A-I2PAK/D2PAK
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB9NB60 600 V < 0.8 Ω 9A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
= 0.7 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGHCURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
1
D2PAK
TO-263
(Suffix ”T4”)
I2PAK
TO-262
(suffix ”-1”)
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 9A, di/dt ≤ 200 A/µs, VDD≤ V
January 2000
Dra in- sour c e Volt age (VGS= 0) 600 V
DS
Dra in- gat e Volt age (RGS=20kΩ)
DGR
Gat e-source Voltage ± 30 V
GS
Dra in Cu rr ent (cont inuous) at Tc=25oC9A
I
D
Dra in Cu rr ent (cont inuous) at Tc=100oC5.7A
I
D
600 V
(•) Dra in Cu rr ent (pulsed) 36 A
Tot al Dissipat ion at Tc=25oC 125 W
tot
Derating Factor 1 W/
1) Peak Diode Recovery volt age sl ope 4.5 V/ns
St orage Tempe rat ure -65 to 150
stg
Max. Operating Junction Temperat ur e 150
T
j
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/8
Page 2
STB9NB60
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Res istance Junct ion-case Max
Ther mal Res istance Junct ion-ambient Max
Ther mal Res istance C as e -s ink Ty p
Maximum Lead Temperature For So ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul s e Avalanc he E ner gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1
62.5
0.5
300
9A
850 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
600 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Sta t ic Drain-s ource On
V
DS=VGSID
= 250 µA
VGS=10V ID=3A 0.7 0.8
345V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
9A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4.5 A 3 6.5 S
VDS=25V f=1MHz VGS= 0 1480
210
25
1924
273
33
µA
µ
Ω
pF
pF
pF
A
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Page 3
STB9NB60
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Tim e
t
VDD=300V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
25
11
35
15
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD= 480 V ID=9 A VGS=10V 40
10.5
17.5
56 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall T ime
f
Cross-over Time
c
VDD=480V ID=9 A
=4.7 ΩVGS=10V
R
G
12
10
21
17
14
29
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
9
36
(pulsed)
(∗)ForwardOnVoltage ISD=9A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
=9A di/dt=100A/µs
I
SD
= 100 V Tj=150oC
V
DD
600
5.4
Charge
Reverse Recovery
18
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
Page 4
STB9NB60
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STB9NB60
NormalizedGate Threshold Voltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
STB9NB60
Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: GateChargetest Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
TO-262 (I2PAK) MECHANICAL DATA
STB9NB60
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055
mm inch
CA1
A
C2
B2
B
e
E
L1
L2
D
L
P011P5/C
7/8
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STB9NB60
TO-263(D2PAK) MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
8/8
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
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STB9NB60
Information furnishedis believed tobeaccurateand reliable.However, STMicroelectronics assumes no responsibilityforthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. This publicationsupersedesandreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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