Datasheet STB90NF3LL Datasheet (SGS Thomson Microelectronics)

STB90NF3LL

N-CHANNEL 30V - 0.0048 Ω - 80A D2PAK

LOW GATE CHARGE STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

STB90NF3LL 30 V < 0.0055

■ TYPICAL R

■ OPTIMAL R

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ SURFACE-MOUNTING D

(on) = 0.0048 Ω @ 10 V

DS

x Qg TRADE-OFF @ 4.5 V

DS(on)

R

DS(on)

Ω

2

PAK (TO-263)

I

D

80 A(#)

POWER PACKAG E IN TU BE (NO SU FFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This application specific Power MOSFET is the third
genaration of STMicro electronis unique "Single Feature

Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the be st perfor manc e in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.

APPLICATIONS

■ SPECIFICALL Y D ESIGNED AND OP TIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(#) Drain Current (continuous) at TC = 25°C

I

D

I

D

(

I

DM

P

tot

T

stg

T

j

Pulse wi dth limited by saf e operating area.

(•)

September 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

30 V
30 V

Gate- source Voltage ± 16 V

80 A

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C

80 A

200 W
Derating Factor 1.3 W/°C
Storage Temperature
Max. Operating Junction Temperature

-55 to 175 °C

(#) Value limited by wire bonding

1/7

STB90NF3LL

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

0.75

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 250 µA, VGS = 0

V

(BR)DSS

Drain-source

I

D

30 V

Breakdown Voltage

= Max Rating

V

DS

V

= Max Rating TC = 125°C

DS

V

= ± 16 V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 10 V ID = 40 A

V

GS

V

= 4.5 V ID = 40 A

GS

= 250 µA

D

1V

0.0048

0.0070

0.0055

0.0090

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID= 40 A

DS

= 25V f = 1 MHz VGS = 0

V

DS

TBD S

3000

950
190

µA
µA

Ω
Ω

pF
pF
pF

2/7

STB90NF3LL

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 40 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 24 V ID= 80 A VGS= 5 V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 40 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

Pulse widt h l i m i ted by safe operating area.

•)

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 80 A VGS = 0

SD

= 80 A di/dt = 100A/µs

I

SD

V

= 10 V Tj = 150°C

DD

(see test circuit, Figure 5)

30

225

39
14
21

37
24

55

115

3.5

51 nC

80

320

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

3/7

STB90NF3LL

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/7

STB90NF3LL

D2PAK MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

5/7

STB90NF3LL

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

6/7

BASE QTY BULK QTY

1000 1000

STB90NF3LL

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ro nics.

The ST log o i s registered trademark of STMicroelectronics

2002 STMi croelectr oni cs - All Rights Reserved

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