Datasheet STP90NF03L, STB90NF03L-1 Datasheet (SGS Thomson Microelectronics)

STP90NF03L

STB90NF03L-1

N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE V

STP90NF03L
STB90NF03L-1

■ TYPICAL R

■ TYPICAL Q

■ OPTIMAL R

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

DS

g

DS

DSS

30 V
30 V

(on) = 0.0056 Ω

=35nC@5V

(on) x QgTRADE-OFF

R

DS(on)

< 0.0065 Ω
< 0.0065 Ω

I

D

90 A
90 A

DESCRIPTION

This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size

™” strip-based process. The resulting

transistor shows the best trade-off between on-re­sistance and gate c harge. When used as high and
low side in buck regulators, it gives the best perfor­mance in terms of both conduc ti on and switching
losses. This is extremely important for mot her­boards where fast switching and high efficiency are
of paramount importance.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS

TO-220

3

2

1

I2PAK

3

2

1

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP90NF03L P90NF03L TO-220 TUBE

STB90NF03L-1 B90NF03L

I

2

PAK

TUBE

1/9April 2003

STP90NF03L/STB90NF03L-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I
I

I

DM

P

TOT

T

stg

T

() Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

30 V

30 V
Gate- source Voltage ±20 V
Drain Current (continuous) at TC=25°C

D

Drain Current (continuous) at TC=100°C

D

()

Drain Current (pulsed) 360 A
Total Dissipation at TC= 25°C

90 A

65 A

150 W
Derating Factor 0.73 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C

j

Maximum Lead Temperature For Soldering Purpose 300 °C

l

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

ON /OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

2/9

(BR)DSS

I

DSS

I

GSS

I

D(on)

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

On State Drain Current VDS>I

Gate Threshold Voltage VDS=VGS,ID= 250 µA
Static Drain-source On

Resistance

ID= 250 µA, VGS= 0 30 V

V

= Max Rating

=0)

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±20V ±100 nA

GS

D(on)xRDS(on)max,

90 A

VGS= 10V

1

VGS= 10V, ID=45A

=5V,ID=45A

V

GS

0.0056

0.007

1µA

10 µA

2.5 V

0.0065 Ω

0.012 Ω

STP90NF03L/STB90NF03L-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

D(on)xRDS(on)max,

ID=45A

V

C

C

C

Input Capacitance

iss

Output Capacitance 860 pF

oss

Reverse Transfer Capacitance 170 pF

rss

=25V,f=1MHz,VGS=0

DS

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time 200 ns
Total Gate Charge VDD=24V,ID=90A,VGS=5V 35

Gate-Source Charge 10 nC
Gate-Drain Charge 18 nC

=15V,ID=45A

DD

RG= 4.7Ω VGS=4.5V
(see test circuit, Figure 3)

40 S

2700 pF

30 ns

47

nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off-Delay Time

t

f

Fall Time

VDD=15V,ID=45A,
R

=4.7Ω, VGS= 4.5 V

G

50

105

(see test circuit, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 90 A

(2)

Source-drain Current (pulsed) 360 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD=90A,VGS=0

= 90 A, di/dt = 100A/µs,

I

SD

V

=15V,Tj= 150°C

DD

(see test circuit, Figure 5)

80
90

2.5

1.3 V

ns
ns

ns

nC

A

3/9

STP90NF03L/STB90NF03L-1

Thermal Im pedenceSafe Operating Area

Output Characteristics Tr ansfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

STP90NF03L/STB90NF03L-1

Gate Charge vs Gate-so urc e V oltage Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

5/9

STP90NF03L/STB90NF03L-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit F or

Resistive Load

Fig. 5: Test Circuit For Induc tive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Ci rcuit

6/9

TO-220 MECHANICAL DATA

STP90NF03L/STB90NF03L-1

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

7/9

STP90NF03L/STB90NF03L-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

8/9

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

STP90NF03L/STB90NF03L-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inform ation nor for any in fring ement of p atents or o ther ri ghts of th ird p arties which may r esul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.

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