Page 1
INTEGRATED CIRCUITS
SA611
1GHz low voltage LNA and mixer
Product specification
Supersedes data of 1997 Nov 07
IC17 Data Handbook
1999 Mar 26
Page 2
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
DESCRIPTION
The SA611 is a combined low-noise amplifier, and mixer designed
for high-performance low-power communication systems from
800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure
at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+7.0dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
FEATURES
•Low current consumption
•Outstanding gain and noise figure
•Excellent gain stability versus temperature and supply voltage
•LNA and mixer power down capability
PIN CONFIGURATION
1
PD1
2
PD2
3
GND
4
LO OUT
5
GND
GND
6
7
GND
8
GND
GND
9
GND
10
Figure 1. Pin Configuration
APPLICATIONS
•900MHz cellular and cordless front-end
•Spread spectrum receivers
•RF data links
•UHF frequency conversion
•Portable radio
20
MIXER OUT
MIXER OUT
19
18
GND
17
MIXER IN
16
GND
LNA IN
15
GND
14
LNA OUT
13
12
V
CC
GND
11
SR00124
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
OUT
MIXER
OUT
GND
MIXER
20 19 18 17 16
10pF 10pF
PD1 PD2 GND
MIXER
IN
43215
LO GND GND
OUT
Figure 2. SA611 Block Diagram
GND
GND
-40 to +85°C
LNA
IN GND
GND
LNA
OUT
V
CC
15 14 13 12 11
LNA
761098
GND GND
GND
SA611DK SOT266–1
SR00125
1999 Mar 26 853-1886 21103
2
Page 3
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
ICCSu ly current
LNA owered-down
5.2
mA
SA61 11GHz low voltage LNA and mixer
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
T
P
T
CC
V
IN
P
D
JMAX
MAX
STG
Supply voltage
Voltage applied to any other pin -0.3 to (VCC + 0.3) V
Power dissipation, TA = 25°C (still air)NO TAG
Maximum operating junction temperature 150 °C
Maximum power input/output +20 dBm
Storage temperature range –65 to +150 °C
NOTE:
1. Transients exceeding 8V on V
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
JA
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
T
A
T
J
Supply voltage 2.7 to 5.5 V
Operating ambient temperature range -40 to +85 °C
Operating junction temperature -40 to +105 °C
NO TAG
-0.3 to +6 V
20-Pin Plastic SSOP 980 mW
pin may damage product.
CC
: 20-Pin SSOP = 110°C/W
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V , TA = 25°C; unless otherwise stated.
pp
V
PD logic threshold voltage 1.2 1.6 1.8 V
T
V
V
Logic 1 level 2.0 V
IH
Logic 0 level –0.3 0.8 V
IL
I
PD1 input current Enable = 0.4V 10 µA
IL
I
PD2 input current Enable = 2.4V 10 µA
IH
LIMITS
MIN TYP MAX
Full power-on 8.3 mA
p
Full power-down 20 µA
CC
V
1999 Mar 26
3
Page 4
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
SA61 11GHz low voltage LNA and mixer
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V , TA = 25°C; RFIN = 881MHz, f
Low Noise Amplifier
f
S
S
RF input frequency range 800 1000 MHz
RF
Amplifier gain 15 dB
21
Amplifier gain in power-down mode -28 dB
21
∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C
∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz
S
S
S
P
Amplifier reverse isolation @ 881 MHz -28 dB
12
Amplifier input match With ext. impedance matching -10 dB
11
Amplifier output match -10 dB
22
Amplifier input 1dB gain compression -20 dBm
-1dB
IP3 Amplifier input third order intercept -7 dBm
NF Amplifier noise figure 1.7 dB
t
t
OFF
Amplifier turn-on time (Enable Lo → Hi) 120 µs
ON
Amplifier turn-off time (Enable Hi → Lo) 0.3 µs
Mixer
PG
S
NF
P
IP3
IP
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
Mixer power conversion gain: RP = RL = 1.2kΩ,
C
Mixer input match Ext. impedance matching req. -10 dB
11M
Mixer SSB noise figure 12 dB
M
Mixer input 1dB gain compression -14.5 dBm
-1dB
Mixer input third order intercept 7.0 dBm
M
Mixer input second order intercept 15 dBm
2INT
Mixer RF feedthrough RFIN = -28dBm -45 dBm
LO feedthrough to IF LO = -0dBm -23 dBm
LO to mixer input feedthrough -36 dBm
LO to LNA input feedthrough -38 dBm
Overall System
G
System gain LNA + Mixer 23.0 23.7 24.4 dB
SYS
= 964MHz; unless otherwise stated.
VCO
fRF = 881MHz, fLO = 964MHz,
fIF = 83MHz
–3
LIMITS
TYP
+3
8.7 dB
1999 Mar 26
4
Page 5
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
Table 1. Power ON/OFF Control Logic
PD1 PD2
0 0 Full chip power-down
0 1 or open Mixer on, LNA power-down
1 or open 0 Standby (bias on)
1 or open 1 or open Full chip power-on (default)
C1
100pF
L6
12nH
L3
C3
6.8pF
IF
OUT
L1
560nH
L4
560nH
20 19 18 17 16 15 14 13 12 11
MIXER GND GND GND GND
MIXER
OUT
OUT
C2
10nF
C10
2.2pF
MIXER
IN
C14
6.8pF
C11
10nF
6.8nH
LNA
IN
C8
10nF
LNA
OUT
C13
33pF
V
+
CC
–
3V
C9
0.1µF
V
CC
SA611
PD1 PD2 GND GND GND GND GND GND GND
1234 5678910
LO
VCO
OUT
OUT
C12
100pF
Figure 3. SA611 Applications Circuit
SR00126
1999 Mar 26
5
Page 6
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
PERFORMANCE CHARACTERISTICS
-13.0
-13.5
-14.0
85°C
-14.5
-40°C
MIXER 1dB (dBm)
-15.0
-15.5
-16.0
2.5 3 3.5 4 4.5 5 5.5
Mixer 1dB Compression vs V
10.0
9.0
8.0
7.0
6.0
5.0
4.0
MIXER IP3 (dBm)
3.0
2.0
1.0
0.0
2.5 3 3.5 4 4.5 5 5.5
-15
-16
-17
-18
85°C
-19
-20
25°C
-21
LNA 1dB (dBm)
-22
-40°C
-23
-24
-25
2.5 3 3.5 4 4.5 5 5.5
LNA 1dB Compression vs V
25°C
V
(V)
CC
VCC (V)
Mixer IP3 vs V
V
CC
CC
CC
(V)
CC
-40°C
25°C
85°C
-27.0
-40°C
-27.5
-28.0
25°C
-28.5
-29.0
-29.5
LNA GAIN (dB)
85°C
-30.0
-30.5
-31.0
2.5 3 3.5 4 4.5 5 5.5
0
LNA Gain (Disabled) vs V
-2
-3
-4
-5
-6
85°C
-7
25°C
-8
LNA IP3 (dBm)
-9
-10
-11
-40°C
-12
2.5 3 3.5 4 4.5 5 5.5
(V)
V
CC
(V)
V
CC
LNA IP3 vs V
CC
CC
SR01249
1999 Mar 26
Figure 4.
6
Page 7
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
PERFORMANCE CHARACTERISTICS
9.8
9.4
9.0
8.6
25°C
8.2
85°C
7.8
Icc (mA)
7.4
7.0
-40°C
6.6
6.2
5.8
2.5 3 3.5 4 4.5 5 5.5
ICC vs VCC and Temperature
(V)
V
CC
-35
-36
25°C
-37
-38
-40°C
-39
-40
85°C
-41
LO to LNA IN (dBm)
-42
-43
-44
-45
2.5 3 3.5 4 4.5 5 5.5
LO to LNA In Feedthrough vs V
V
(V)
CC
CC
10.0
9.5
-40°C
9.0
25°C
8.5
8.0
85°C
7.5
7.0
MIXER GAIN (dB)
6.5
6.0
5.5
5.0
2.5 3 3.5 4 4.5 5 5.5
Mixer Power Gain vs V
–31.0
–33.0
25°C
–35.0
-40°C
–37.0
85°C
–39.0
LO to MIXER IN (dBm)
–41.0
V
(V)
CC
CC
-20
-21
-22
-23
-40°C
-24
25°C
-25
-26
LO to IF (dBm)
85°C
-27
-28
-29
-30
2.5 3 3.5 4 4.5 5 5.5
LO to IF Feedthrough vs V
V
(V)
CC
CC
1999 Mar 26
–43.0
–45.0
2.5 3 3.5 4 4.5 5 5.5
LO to Mixer In Feedthrough vs V
V
(V)
CC
CC
SR01250
Figure 5.
7
Page 8
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
PERFORMANCE CHARACTERISTICS
–42.0
–43.0
–44.0
–45.0
–46.0
MIXER IN to IF (dBm)
–47.0
–48.0
25°C
-40°C
85°C
2.5 3 3.5 4 4.5 5 5.5
Mixer In to IF Feedthrough vs V
12.8
12.4
12.3
85°C
12.2
12.1
25°C
12.0
11.4
-40°C
MIXER NOISE FIGURE (dB)
11.3
11.2
11.1
11.0
2.5 3 3.5 4 4.5 5 5.5
Mixer Noise Figure vs V
(V)
V
CC
VCC (V)
CC
CC
Figure 6.
15.6
15.4
-40°C
15.2
15.0
25°C
14.8
14.6
14.4
LNA GAIN (dB)
85°C
14.2
14.0
13.8
13.6
2.5 3 3.5 4 4.5 5 5.5
LNA Gain (Enabled) vs V
2.0
1.9
85°C
1.8
1.7
25°C
1.6
1.5
-40°C
1.4
1.3
LNA NOISE FIGURE (dB)
1.2
1.1
1.0
2.5 3 3.5 4 4.5 5 5.5
LNA Noise Figure vs V
(V)
V
CC
CC
(V)
V
CC
CC
SR01251
1999 Mar 26
8
Page 9
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
CH2
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
1 U FS
S
11
4
3
2
1
A. S11 DATA
1: 40.1 Ω
-129.6 Ω
200 MHz
2: 24.0 Ω
-62.9 Ω
400 MHz
3: 18.6 Ω
-37.4 Ω
600 MHz
4: 14.1 Ω
10.5 pF
-16.7 Ω
900 MHz
CH1
S
1 U FS
22
1: 40.5 Ω
2: 36.1 Ω
4
1
2
3
START 700. 000 000 MHz STOP 1 200. 000 000 MHz
3: 34.7 Ω
4: 34.9 Ω
B. S22 DATA
Figure 7. Typical S11 of LNA at 3V
-28.2 Ω
700 MHz
-12.4 Ω
800 MHz
3.5 Ω
900 MHz
3.74 Ω
661.4 pH
900 MHz
SR01252
1999 Mar 26
9
Page 10
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
CH1
S
1 U FS
22
4
1
2
3
START 700. 000 000 MHz STOP 1 200. 000 000 MHz
Figure 8. Typical S22 of LNA at 3V
CH1
10 U FS
S
21
1: 40.5 Ω
-28.2 Ω
700 MHz
2: 36.1 Ω
-12.4 Ω
800 MHz
3: 34.7 Ω
3.5 Ω
900 MHz
4: 34.9 Ω
3.74 Ω
661.4 pH
900 MHz
SR01253
1: 6.7 U
2
1
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
3
4
2: 5.9 U
3: 5.9 U
4: 4.5 U
Figure 9. Typical S21 of LNA at 3V
142.5 °
200 MHz
112.3 °
400 MHz
78.1 °
600 MHz
21.2°
900 MHz
SR01254
1999 Mar 26
10
Page 11
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
CH2
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
50 mU FS
S
12
4
3
1
2
Figure 10. Typical S12 of LNA at 3V
1: 1.9 mU
83.0 °
200 MHz
2: 1.6 mU
133.5 °
400 MHz
3: 11.4 mU
141.5 °
600 MHz
4: 27.9 mU
106.1°
900 MHz
SR01255
1999 Mar 26
11
Page 12
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
CH1
1 U FS
S
11
4
3
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
1
2
Figure 11. Typical S11 of Mixer at 3V
1: 122.8 Ω
-144.9 Ω
200 MHz
2: 58.0 Ω
-86.8 Ω
400 MHz
3: 45.9 Ω
-62.3 Ω
600 MHz
4: 26.6 Ω
-43.2 Ω
4.085 pF
900 MHz
SR01256
1999 Mar 26
12
Page 13
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
Table 2. Typical S-Parameters of LNA at 3V
LNA
Freq (MHz)
100 0.86 -20 7.4 160 0.001 91.91 0.59 -9.62
122 0.86 -24 7.1 156 0.001 62 0.58 -11.71
144 0.85 -28 7.0 151 0.001 105.42 0.58 -13.86
166 0.83 -32 6.9 148 0.000 91.65 0.57 -15.89
188 0.82 -36 6.8 144 0.002 100.23 0.57 -17.80
210 0.81 -41 6.7 140 0.002 73.57 0.56 -20.05
232 0.80 -45 6.6 136 0.002 99.70 0.55 -22.37
254 0.79 -48 6.5 133 0.001 84.00 0.54 -24.60
276 0.78 -52 6.4 130 0.001 103.18 0.53 -26.89
298 0.76 -56 6.3 126 0.002 94.33 0.52 -28.72
320 0.75 -59 6.3 123 0.002 66.98 0.51 -30.98
342 0.73 -63 6.2 119 0.002 108.53 0.50 -32.79
364 0.71 -66 6.1 116 0.002 118.13 0.48 -34.68
386 0.70 -69 6.0 113 0.001 103.4 0.47 -36.06
408 0.69 -72 5.9 111 0.001 175.94 0.46 -36.64
430 0.68 -76 5.9 109 0.004 174.1 0.45 -37.21
452 0.69 -78 6.0 106 0.006 162.02 0.46 -38.41
474 0.68 -82 6.1 102 0.007 160.07 0.47 -41.54
496 0.67 -85 6.1 97 0.008 153.6 0.47 -45.75
518 0.66 -89 6.1 93 0.010 146.17 0.46 -50.35
540 0.65 -92 6.1 89 0.009 142.13 0.45 -54.73
562 0.63 -96 6.1 85 0.010 138.49 0.43 -59.16
584 0.62 -99 6.0 81 0.011 146.17 0.42 -63.93
606 0.62 -102 5.9 77 0.011 140.55 0.40 -68.56
628 0.61 -104 5.8 72 0.013 137.2 0.38 -73.48
650 0.61 -107 5.7 69 0.013 130.62 0.36 -78.19
672 0.60 -109 5.7 65 0.016 129.77 0.34 -83.75
694 0.60 -112 5.6 61 0.016 131.94 0.31 -89.81
716 0.59 -115 5.5 57 0.017 128.67 0.29 -96.92
738 0.59 -118 5.5 53 0.019 127.53 0.27 -104.48
760 0.59 -121 5.3 48 0.021 123.42 0.24 -112.81
782 0.59 -124 5.3 44 0.021 122.31 0.22 -122.41
804 0.59 -126 5.1 40 0.022 119.52 0.21 -132.81
826 0.59 -129 5.0 36 0.024 118.29 0.19 -145.39
848 0.59 -132 4.9 31 0.026 115.98 0.18 -159.13
870 0.59 -135 4.8 26 0.027 111.9 0.17 -175.11
892 0.59 -138 4.6 22 0.028 108.11 0.18 169.02
914 0.59 -142 4.5 18 0.028 105.92 0.19 154.96
936 0.59 -144 4.3 14 0.028 106.13 0.20 141.94
958 0.59 -148 4.2 9 0.030 99.79 0.22 130.27
980 0.59 -151 4.0 4 0.031 99.30 0.24 119.5
1002 0.59 -153 3.8 0 0.031 94.81 0.26 110.61
1024 0.59 -157 3.6 -2 0.032 90.91 0.28 102.16
1046 0.59 -160 3.5 -6 0.032 85.65 0.30 94.98
1068 0.59 -164 3.3 -10 0.033 86.10 0.33 88.45
1090 0.59 -167 3.2 -14 0.033 80.59 0.35 82.47
1112 0.59 -170 3.0 -18 0.031 79.18 0.36 77.17
1134 0.58 -172 2.8 -22 0.030 46.32 0.38 71.98
1156 0.58 -175 2.7 -25 0.031 78.57 0.39 67.45
1178 0.57 -178 2.5 -28 0.031 73.66 0.41 62.73
1200 0.57 178 2.4 -31 0.029 71.78 0.42 58.87
|S11|
(U)
<S11 (deg)
|S21|
(U)
<S21 (deg)
|S12|
(U)
<S12 (deg)
|S22|
(U)
<S
(deg)
22
1999 Mar 26
13
Page 14
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
Table 3. Typical S-Parameters of Mixer at 3V
Mixer
Freq (MHz)
100 0.73 -11
122 0.73 -147
144 0.72 -16
166 0.72 -19
188 0.72 -21
210 0.71 -24
232 0.70 -27
254 0.70 -29
276 0.69 -32
298 0.68 -34
320 0.67 -37
342 0.66 -39
364 0.64 -42
386 0.63 -–44
408 0.62 -46
430 0.61 -48
452 0.59 -50
474 0.58 -52
496 0.57 -53
518 0.56 -54
540 0.55 -56
562 0.55 -57
584 0.54 -59
606 0.54 -61
628 0.54 -62
650 0.54 -64
|S11|
(U)
<S11 (deg)
Freq (MHz)
672 0.54 -65
694 0.54 -67
716 0.54 -69
738 0.54 -71
760 0.54 -73
782 0.55 -76
804 0.55 -78
826 0.55 -80
848 0.55 -82
870 0.55 -85
892 0.56 -87
914 0.55 -90
936 0.56 -93
958 0.56 -96
980 0.56 -98
1002 0.56 -101
1024 0.57 -104
1046 0.57 -106
1068 0.57 -110
1090 0.57 -112
1112 0.57 -115
1134 0.57 -118
1156 0.57 -121
1178 0.57 -124
1200 0.57 -127
Mixer
|S11|
(U)
<S11 (deg)
1999 Mar 26
14
Page 15
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
1999 Mar 26
15
Page 16
Philips Semiconductors Product specification
SA61 11GHz low voltage LNA and mixer
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Date of release: 03-99
Document order number: 9397 750 05473
1999 Mar 26
16
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