Page 1
INTEGRATED CIRCUITS
SA639
Low voltage mixer FM IF system with
filter amplifier and data switch
Product specification 1998 Feb 10
IC17 Data Handbook
Page 2
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
DESCRIPTION
The SA639 is a low-voltage high performance monolithic FM IF
system with high-speed RSSI incorporating a mixer/oscillator, two
wideband limiting intermediate frequency amplifiers, quadrature
detector, logarithmic received signal strength indicator (RSSI), fast
RSSI op amps, voltage regulator, wideband data output, post
detection filter amplifier and data switch. The SA639 is available in
24-lead TSSOP (Thin shrink small outline package).
The SA639 was designed for high bandwidth portable
communication applications and will function down to 2.7V . The RF
section is similar to the famous NE605. The data output provides a
minimum bandwidth of 1MHz to demodulate wideband data. The
RSSI output is amplified and has access to the feedback pin. This
enables the designer to level adjust the outputs or add filtering.
The post-detection amplifier may be used to realize a low pass filter
function. A programmable data switch routes a portion of the data
signal to an external integration circuit that generates a data
comparator reference voltage.
SA639 incorporates a power down mode which powers down the
device when Pin 8 is high. Power down logic levels are CMOS and
TTL compatible with high input impedance.
APPLICATIONS
•DECT (Digital European Cordless Telephone)
•FSK and ASK data receivers
FEATURES
•V
= 2.7 to 5.5V
CC
•Low power consumption: 8.6mA typ at 3V
•Wideband data output (1MHz min.)
•Fast RSSI rise and fall times
•Mixer input to >500MHz
•Mixer conversion power gain of 9.2dB and noise figure of 11dB at
110MHz
PIN CONFIGURATION
RF BYPASS
XTAL OSC (EMITTER)
XTAL OSC (BASE)
RSSI FEEDBACK
RSSI OUT
POWER DOWN CONTROL
DATA OUT
POSTAMP IN
POSTAMP OUT
SWITCH CONTROL
•XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
•92dB of IF Amp/Limiter power gain
•25MHz limiter small signal bandwidth
•Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 80dB
•RSSI output internal op amp
•Post detection amplifier for filtering
•Programmable data switch
•Excellent sensitivity: 2.24µV into 50Ω matching network for 10dB
SNR (Signal to Noise Ratio) with RF at 110MHz and IF at 9.8MHz
•ESD hardened
•Power down mode
RF
1
IN
2
3
4
5
V
CC
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Figure 1. Pin Configuration
SA639
MIXER OUT
IF AMP DECOUPLING
IF AMP IN
IF AMP DECOUPLING
IF AMP OUT
GND
LIMITER IN
LIMITER DECOUPLING
LIMITER DECOUPLING
LIMITER OUT
QUADRATURE IN
SWITCH OUT
SR00030
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
24-Pin Plastic TSSOP (Thin Shrink Small Outline Package) -40 to +85°C SA639DH
1998 Feb 10 853-1792 18944
2
SOT-355
Page 3
Philips Semiconductors Product specification
Input current
A
Input level
Input current
A
Low voltage mixer FM IF system with filter amplifier
and data switch
BLOCK DIAGRAM
23 22
IF
AMP
MIXER
OSCILLATOR
EB
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
V
IN
T
STG
T
A
NOTE:
1. Except logic input pins (Pins 8 and 12) which can have 6V maximum.
Thermal impedance (DH package) 117°C/W
2. θ
JA
Single supply voltage -0.3 to 6 V
Voltage applied to any other pin
Storage temperature range -65 to +150
Operating ambient temperature range SA639
20 19 18 17 16 15 14 132124
GND
V
CC
RSSI
Figure 2. Block Diagram
1
2
FAST
RSSI
+–
LIMITER
PWR
DWN
DATA
QUAD
+–
+–
10987654321
1211
-0.3 to (VCC+0.3) V
-40 to +85
SA639
SR00031
°C
°C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA639 UNITS
MIN -3σ TYP +3σ MAX
V
I
I
t
t
OFF
NOTE:
1. When the device is forced in power down mode via Pin 8, the Data Switch will output a voltage close to 1.6V and the state of the switch
control input will have no effect.
Power supply voltage range 2.7 3.0 5.5 V
CC
DC current drain Pin 8 = LOW, Pin 12 = HIGH 8.33 8.6 8.87 10 mA
CC
Standby Pin 8 = HIGH, Pin 12 = HIGH 131.9 140 148.1 500 µA
CC
p
p
Power up time RSSI valid (10% to 90%) 10 µs
ON
Pin 8 = LOW 10
Pin 8 = HIGH 4
Pin 8 = LOW 0 0.3V
Pin 8 = HIGH
NO TAG
0.7V
CC
Power down time RSSI invalid (90% to 10%) 5 µs
Power up settling time Data output valid 100 200 µs
Switch closed Pin 12 = LOW, PIN 8 = LOW 0 0.3 V
Switch open (output tri-state) Pin 12 = HIGH 0.7 V
p
Pin 12 = LOW 10
Pin 12 = HIGH 4
CC
Switch activation time 0.5 1 µs
µ
CC
6
CC
6 V
µ
V
V
1998 Feb 10
3
Page 4
Philips Semiconductors Product specification
s
s
Low voltage mixer FM IF system with filter amplifier
and data switch
AC ELECTRICAL CHARACTERISTICS
TA = 25°C; VCC = +3V, unless otherwise stated. RF frequency = 110.592MHz ;LO frequency = 120.392MHz; IF frequency = 9.8MHz; RF level
= -45dBm; FM modulation = 576kHz with ±288kHz peak deviation, discriminator tank circuit Q=4. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the
device. Use of an optimized RF layout will improve many of the listed parameters.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA639 UNITS
MIN -3σ TYP +3σ MAX
Mixer/Osc section (ext LO = -14dBm)
f
f
OSC
IF section
RF/IF section (ext LO = -14dBm)
S/N Signal-to-noise ratio No modulation for noise 56.1 60 63.9 dB
Input signal frequency 500 MHz
IN
External oscillator (buffer) 0.2 500 MHz
Noise figure at 110MHz 10.4 11 11.6 dB
Third-order input intercept point
Conversion power gain 6 8.6 9.2 11.1 dB
RF input resistance Single-ended input 800 Ω
RF input capacitance 3.5 pF
Mixer output resistance (Pin 24) 330 Ω
IF amp gain 38.86 40 41.14 dB
Limiter gain 50.44 52 53.56 dB
Input limiting -3dB Test at Pin 22 –100 dBm
IF input impedance 330 Ω
IF output impedance 330 Ω
Limiter input impedance 330 Ω
Limiter output impedance 300 Ω
Limiter output level with no
load
Data level RL = 10kΩ, CL = 30pF 260 360 mV
Data bandwidth 2.1 2.4 2.7 MHz
AM rejection 80% AM 1kHz 34.8 36 37.2 dB
RF RSSI output with buffer RF level = -45dBm 0.5 0.732 0.9 1.068 1.3 V
RF RSSI output rise time IF frequency = 9.8MHz
(10kHz pulse, w/ 9.8MHz filter) RF level = -45dBm 0.8
(no RSSI bypass capacitor) RF level = -28dBm 0.8
RF RSSI output fall time IF frequency = 9.8MHz
(10kHz pulse, w/ 9.8MHz filter) RF level = -45dBm 2.0
(no RSSI bypass capacitor) RF level = -28dBm 1.8
RSSI range 80 dB
RSSI accuracy ±1.5 dB
SINAD RF level = -85dBm 9.45 12 14.55 dB
S/N RF level = -100dBm 5.8 10 14.2 dB
Matched f1=110.592MHz;
f2=110.852MHz
RF level = -90dBm 0 0.232 0.4 0.568 0.75
RF level = -10dBm 0.8 1.032 1.2 1.368 1.6
-11 -9.5 -8 dBm
130 mV
SA639
RMS
P-P
µ
µ
1998 Feb 10
4
Page 5
Philips Semiconductors Product specification
Dynamic offset voltage
2
6
mV
Low voltage mixer FM IF system with filter amplifier
and data switch
AC ELECTRICAL CHARACTERISTICS (Continued)
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA639 UNITS
MIN -3σ TYP +3σ MAX
Post detection filter amplifier
Amplifier 3dB bandwidth
Amplifier gain
Slew rate
Input resistance 300 kΩ
Input capacitance 3 pF
Output impedance 150 800 Ω
Output load resistance AC coupled 5 kΩ
Output load capacitance
DC output level
2
1
Data switch
DC input voltage range
3
AC input swing 400 mV
Input impedance 100 kΩ
Input capacitance 5 pF
Output load resistance 500 Ω
Through Mode (Pin 12 = LOW)
AC voltage gain
4
Output drive capability Sink/source, V
Slew rate V
Static offset voltage
5
,
Tri-State Mode (Pin 12 = HIGH)
Output leakage current V
NOTES:
1. Includes filter feedback capacitance, comparator input capacitance. PCB stray capacitances and switch input capacitance.
2. Demodulator output DC coupled with Post Detection Filter Amplifier input and the demodulator tank exactly tuned to center frequency.
3. Includes DC offsets due to frequency offsets between Rx and Tx carrier and demodulator tank offset due to mis-tuning.
4. With a 400mV
5. With a DC input and capacitor in the RC load fully charged.
sinusoid at 600kHz driving Pin 10. Output load resistance 500Ω in series with 10nF.
P-P
6. The switch is closed every 10ms for a duration of 40µs. The DC offset is determined by calculating the difference of 2 DC measurements,
which are determined as follows: 1) The first DC value is measured at the integrating capacitor of the switch when the switch is in the closed
position immediately before it opens. The value to be measured is in the middle of the peak-to-peak excursion of the superimposed
sine-wave. (DClow + (DChigh – DClow)/2). 2) The second DC value (calculated as above) is measured at Pin 11 immediately after the
switch opens, and is the DC value which gives the largest DC offset to the first DC measurement within a 400µs DECT burst. Minimum and
maximum limits are not tested, however, they are guaranteed by design and characterization using an optimized layout and application
circuit.
7. Standard deviations are measured based on application of 60 parts.
AC coupled: RL = 10kΩ,
C
= 33pF
L
AC coupled: RL = 10kΩ,
V
OUT DC
= 1.6V
AC coupled: RL = 10kΩ,
CL = 33pF
11.7 12.8 13.8 MHz
-0.2 dB
2.4 V/µs
AC coupled 30 pF
1.5 1.682 1.7 1.718 1.9 V
1.2 1.6 2.0 V
-1.5 dB
= 1.6V 3 mA
OUT DC
= 1.6V >14.0 V/µs
OUT DC
V
= 1.2 to 2.0V -0.6 0.30 1.2 ±5 mV
IN DC
V
= 1.4 to 2.0V;
IN DC
VCC = 3.0 to 5.0V;
-7 +7
RF level = -70 to -40 dBm
V
= 1.4 to 2.0V;
IN DC
VCC = 3.0 to 5.0V;
-10 +10
RF level = -40 to -5 dBm
= 1.2 to 2.0V 9.5 20 30.5 100 nA
OUT DC
SA639
P-P
1998 Feb 10
5
Page 6
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
CIRCUIT DESCRIPTION
The SA639 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 44dB(v) of
gain from a 50Ω source. The bandwidth of the limiter is about
28MHz with about 58dB(v) of gain from a 50Ω source. However, the
gain/bandwidth distribution is optimized for 9.8MHz, 330Ω source
applications. The overall system is well-suited to battery operation
as well as high performance and high quality products of all types,
such as digital cordless phones.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 11dB, conversion power gain
of 9.2dB, and input third-order intercept of -9.5dBm. The oscillator
will operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The output of the mixer is internally loaded with a 330Ω resistor
permitting direct connection to a 330Ω ceramic filter. The input
resistance of the limiting IF amplifiers is also 330Ω. With most 330Ω
ceramic filters and many crystal filters, no impedance matching
network is necessary. To achieve optimum linearity of the log signal
strength indicator, there must be a 6dB(v) insertion loss between the
first and second IF stages. If the IF filter or interstage network does
not cause 6dB(v) insertion loss, a fixed or variable resistor can be
added between the first IF output (Pin 20) and the interstage
network.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector . One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequency at 9.8MHz. Special care must be given to
layout, termination, and interstage loss to avoid instability.
The demodulated output (DATA) of the quadrature is a low
impedance voltage output. This output is designed to handle a
minimum bandwidth of 1MHz. This is designed to demodulate
wideband data, such as in DECT applications.
° phase
Post Detection Filter Amplifier
The filter amplifier may be used to realize a group delay optimized
low pass filter for post detection. The filter amplifier can be
configured for Sallen & Key low pass with Bessel characteristic and
a 3dB cut frequency of about 800kHz.
The filter amplifier provides a gain of 0dB. The output impedance is
less than 500Ω in order to reduce frequency response changes as a
result of amplifier load variations. The filter amplifier has a 3dB
bandwidth of at least 4 MHz in order to keep the amplifier’s
frequency response influence on the filter group delay characteristic
at a minimum. At the center of the carrier it is mandatory to provide
a filter output DC bias voltage of 1.6V in order to be within the input
common mode range of the external data comparator. The filter
output DC bias voltage specification holds for an exactly center
tuned demodulator tank and for the demodulator output connected
to the filter amplifier input.
Data Switch
The SA639 incorporates an active data switch used to derive the
data comparator reference voltage by means of an external
integration circuit. The data switch is typically closed for 10µs
before and during reception of the synchronization word pattern, and
is otherwise open. The external integration circuit is formed by an
R/C low pass with a time constant of 5 to 10µs.
The active data switch provides excellent tracking behavior over a
DC input range of 1.2 to 2.0V. For this range with an RC load (no
static current drawn), the DC output voltage will not differ more than
±5mV from the input voltage. Since the active data switch is
designed to behave like a non-linear charge pump (to allow fast
tracking of the input signal without slew rate limitations under
dynamic conditions of a 576kHz input signal with 400mV
RC load), the output signal will have a 340mV
average that will not vary from the input DC average by more than
±10mV.
The data switch is able to sink/source 3mA from/to the external
integration circuit in order to minimize the settling time after long
power-down periods (DECT paging mode). In addition, during
power-down conditions a reference voltage of approximately 1.6V
will be used as the input to the switch. The switch will be in a low
current mode to maintain the voltage on the external RC load. This
will further reduce the settling time of the capacitor after power-up.
It should be noted that during power-down the switch can only
source and sink a trickle current (10µA). Thus, the user should
make sure that other circuits (like the data comparator inputs) are
not drawing current from the RC circuit.
The data switch provides a slew rate better than 1V/µs in order to
track with system DC offset from receive slot to receive slot (DECT
idle lock or active mode). When the data switch is opened the
output is in a tri-state mode with a leakage current of less than
100nA. This reduces discharge of the external integration circuit.
When powered-down, the data switch will output a reference of
approximately 1.6V to maintain a charge on the external RC circuit.
A Receive Signal Strength Indicator (RSSI) completes the circuitry.
The output range is greater than 80dB and is temperature
compensated. This log signal strength indicator exceeds the criteria
for DECT cordless telephone. This signal drives an internal op amp.
The op amp is capable of rail-to-rail output. It can be used for gain,
filtering, or 2nd-order temperature compensation of the RSSI, if
needed.
NOTE: dB(v) = 20log V
OUT/VIN
SA639
P-P
output with a DC
P-P
and the
1998 Feb 10
6
Page 7
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
PIN FUNCTIONS All DC voltages measured with Pin 8 = Pin 12 = Pin 19 = 0V, Pin 5 = 3V and Pin 9 connected to Pin 10.
PIN
No.
1 RF IN +1.07 6
2
PIN
MNEMONIC
RF
DC V EQUIVALENT CIRCUIT
0.8k
1
0.8k
No.
2
+1.07 7
PIN
PIN
MNEMONIC
RSSI
FEEDBACK
RSSI
OUTBYPASS
DC V EQUIVALENT CIRCUIT
V
CC
+0.20
+0.20
—
6
+
—
SA639
+
V
CC
7
3
4
5V
XTAL
XTAL
CC
+1.57 8
4
3
+2.32 9
5
18k
V
MIX
150µA
REF
+3.00 10
BANDGAP
POWER
DOWNOSC
DATA
OUTOSC
POST
AMP
IN
0.00
+1.7
+1.70
R
8
R
V
CC
9
10
20µA
1998 Feb 10
SR00032
Figure 3. Pin Functions
7
Page 8
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
PIN FUNCTIONS (continued)
PIN
No.
11
12
PIN
MNEMONIC
POST
AMP
OUT
SWITCH
CONTROL
DC V EQUIVALENT CIRCUIT
+1.70
11
12
0.00
PIN
No.
MNEMONIC
LIMITER
16
DECOUP
LIMITER
17
COUPLING
LIMITER
18
19 GND 0
R
20
R
AMP OUT
PIN
IN
IF
DC V EQUIVALENT CIRCUIT
+1.23
18
+1.23
+1.23
+1.22
330Ω
50µA
17
140Ω
8.8k
16
20
SA639
13
14
15
SWITCH
OUT
QUAD
IN
LIMITER
OUT
+1.70
+3.00
+1.35
IF AMP
21
22
23
24
DECOUP
IF
AMP IN
IF AMP
DECOUP
MIXER
OUT
13
80k
14
20µA
15
8.8k
+1.22
+1.22
+1.22
+1.03
22
330Ω
50µA
23
21
110Ω
24
400µA
1998 Feb 10
SR00033
Figure 4. Pin Functions (cont.)
8
Page 9
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
120nH
+
C2
15pF
C4
1nF
L2
C8
100nF
R6
5.6kΩ
C1
5–30pF
CL
30pF
L1
180nH
C3
10nF
U1
1
RF IN
2
RF BYPASS
nc
XTAL
3
OSC (EMITTER)
XTAL
4
OSC (BASE)
5
V
CC
6
RSSI FEEDBACK
7
RSSI OUT
8
PD CTRL
9
DATA OUT
10
POSTAMP IN
11
POSTAMP OUT
MIXER OUT
DECOUPLING 1
DECOUPLING 2
LIMITER IN
LIMITER DEC1
LIMITER DEC2
LIMITER OUT
J2
J3
SMA
LO IN
V
GND
RSSI
PWR DWN
DATA OUT
SMA
RF IN
J1
120.392MHz
@–10dBm
+3V
CC
110.592MHz
+/–288kHz
C5
5–30pF
C6
39pF
R8
10
C7
15µF
RL
10kΩ
5.6kΩ
+
2.2µF
R7
IF AMP
IF IN
IF AMP
IF OUT
GROUND
QUAD IN
24
23
22
21
20
19
18
17
16
15
14
C18
0.1µF
C26
0.1µF
0.1µF
100pF
100pF
C19
0.1µF
C28
0.1µF 1.5nF
330nH
68pF
68pF
0.1µF
0.1µF
560Ω
0.1µF
SA639
680nH
330pF
6.49kΩ
348Ω
1kΩ
330pF
6.49kΩ
348Ω
0.1µF
1kΩ
50Ω
50Ω
680nH
50Ω
MIXER
OUT
1nF
IF AMP
IN
50Ω
IF AMP
OUT
LIMITER
IN
LIMITER
OUT
POSTAMP IN
POSTAMP OUT
SW CTRL
SW OUT
1998 Feb 10
RL
10kΩ
2.2µF
10k
13
R9
1.3k
C14
33pF
C16
5-30pF
C17
15pF
C15
6.8pF
L3
4.7µH
SR00034
12
SW CTRL
+
CL
33pF
SA639
C13
10nF
R8
510
SW OUT
QUAD IN DC
Figure 5. SA639 Test Circuit
9
Page 10
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Temperature and V
12
11
10
9
8
CURRENT (mA)
7
6
-40 0 25 70 85
VCC = 3V
TEMPERATURE (°C)
VCC = 5.5V
VCC = 2.7V
CC
Standby Supply Current vs Temperature and V
0.5
0.45
0.4
0.35
0.3
0.25
0.2
CURRENT (mA)
0.15
0.1
0.05
0
-40 0 25 70 85
SA639
CC
VCC = 5.5V
VCC = 3V
VCC = 2.7V
TEMPERATURE (°C)
Mixer Power Gain vs Temperature and V
RF = -40dBm, 110.392MHz
LO = -10dBm, 120.592MHz
15
14
13
12
11
10
9
GAIN (dB)
8
7
6
5
-40 0 25 70 85
TEMPERATURE (°C)
Mixer NF vs Temperature and V
15
14
13
12
VCC = 5V
11
10
NF (dB)
9
8
7
6
5
-40 0 25 70 85
IF = 11MHz
VCC = 2.7V
VCC = 3V
TEMPERATURE (°C)
CC
VCC = 5.5V
VCC = 3V
VCC = 2.7V
CC
Mixer Input IP3 vs Temperature and V
RF = -40dBm, 110.392MHz
LO = -10dBm, 120.592MHz
0
-2
-4
-6
-8
-10
-12
IP3 (dB)
-14
-16
-18
-20
-22
-40 0 25 70 85
TEMPERATURE (°C)
VCC = 5.5V
VCC = 3V
VCC = 2.7V
Limiter and IF Gain vs Temperature and V
IF Input = -90dBm, 9.8MHz
LIM Input = -100dBm, 9.8MHz
60
58
56
LIMITER
54
53
50
48
46
GAIN (dB)
44
IF AMP
42
40
38
36
34
-40 0 25 70 85
TEMPERATURE (°C)
VCC = 3V
VCC = 3V
VCC = 5.5V
VCC = 2.7V
VCC = 5.5V
VCC = 2.7V
CC
CC
1998 Feb 10
SR00035
Figure 6. Typical Performance Characteristics
10
Page 11
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Relative Data Output Level, THD, Noise and
AM Rejection vs Temperature
Dev. = 288kHz, LO = 119.8MHz, -14dBm, VCC = 3V
20
0
-20
-40
-60
-80
-100
RELATIVE TO DATA OUTPUT (dB)
-40-40 002525 7070 8585
RF = 110MHz, Level = -50dBm
Data
AM Rej
THD
NOISE
TEMPERATURE (°C)
10 1.3
0
-10
-20
-30
-40
-50
-60
-70
-80
RELATIVE TO DATA OUTPUT (dB)
-90
SA639 Receiver RF Performance
RF = 110kHz, LO = 119.8MHz, Data = 430.76mV
VCC = 3V, T = 25°C, 576kHz sine
Data
THD+N
AM REJ
NOISE
-90
-80
-70
-60
-50
-110
-100
RF INPUT LEVEL (dBm)
-40
RSSI
-30
SA639
P-P
-20
-10
1.2
1.1
1
0.9
0.8
RSSI (V)
0.7
0.6
0.5
0.4
0.3
0
RSSI vs RF Level and Temperature
VCC = 3V
1.8
1.6
1.4
1.2
1
0.8
VOLTAGE (V)
0.6
0.4
0.2
0
-1102-100 -90 -80 -70 -60 -50 -40 -30 -20 -10
RF LEVEL (dBm)
-40°C
25°C
85°C
Data Output DC Voltage vs Temperature and V
2.3
2.2
2.1
2
1.9
1.8
1.7
VOLTAGE (Vdc)
1.6
1.5
1.4
1.3
-40 0 25 70 85
TEMPERATURE (°C)
VCC = 5.5V
VCC = 3V
VCC = 2.7V
Figure 7. Typical Performance Characteristics (cont.)
CC
RSSI vs RF Level and V
Temperature = 25°C
1.8
1.6
1.4
1.2
1
0.8
VOLTAGE (V)
0.6
0.4
0.2
0
-1102-100 -90 -80 -70 -60 -50 -40 -30 -20 -10
RF LEVEL (dBm)
CC
VCC = 5.5V
VCC = 2.7V
Data Output AC Voltage vs Temperature and V
700
650
600
550
500
450
400
VOLTAGE (mVp-p)
350
300
250
200
-40 0 25 70 85
TEMPERATURE (°C)
VCC = 5.5V
VCC = 3V
VCC = 2.7V
VCC = 3V
CC
SR00036
1998 Feb 10
11
Page 12
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Data Output -3dB Bandwidth vs Temperature and V
3.5
3.3
3.1
2.9
2.7
2.5
2.3
2.1
FREQUENCY (MHz)
1.9
1.7
1.5
-40 0 25 70 85
VCC = 2.7V
TEMPERATURE (°C)
VCC = 5.5V
VCC = 3V
Post Detection Amplifier vs
Temperature and V
0
-0.1
-0.2
-0.3
-0.4
GAIN (dB)
-0.5
-0.6
-0.7
-0.8
-40 0 25 70 85
VCC = 5.5V
TEMPERATURE (°C)
CC
VCC = 2.7V
VCC = 3V
CC
Switch -3dB Bandwidth vs Temperature and V
10
9
8
7
6
5
4
FREQUENCY (MHz)
3
2
1
-40 0 25 70 85
16
9
8
7
6
5
4
FREQUENCY (MHz)
3
2
1
SA639
CC
VCC = 5.5V
VCC = 3V
Post Detection Amplifier -3dB Bandwidth vs
VCC = 3V
-40 0 25 70 85
VCC = 2.7V
TEMPERATURE (°C)
Temperature and V
VCC = 5.5V
VCC = 2.7V
TEMPERATURE (°C)
CC
1998 Feb 10
Switch Output Leakage Current vs
Temperature and V
60
50
40
30
20
10
CURRENT (nA)
0
-10
-20
-40 0 25 70 85
TEMPERATURE (°C)
CC
VCC = 5.5V
VCC = 3V
VCC = 2.7V
Figure 8. Typical Performance Characteristics (cont.)
12
Switch Output to Input Offset Voltage
vs Temperature and V
16
14
12
10
8
6
4
2
0
VOLTAGE (mV)
-2
-4
-6
-8
-40 0 25 70 85
TEMPERATURE (°C)
CC
VCC = 5.5V
VCC = 3V
VCC = 2.7V
SR00037
Page 13
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
12200mV 5.00mV –376ns 200ns/ 1 RUN
90%
RSSI OUTPUT
= 0.79µs
t
r
RF INPUT
2
LEVEL = -28dBm
PULSE
MODULATED
@ 10kHz
SA639
f = 110MHz
t1 = –376.0ns t2 = 412.0ns ∆t = 788.0ns 1/∆t = 1.269MHz
Figure 9. SA639 RSSI Rise Time
12200mV 5.00mV –1.36us 500ns/ 1 RUN
SR00038
RSSI OUTPUT
= 1.89µs
t
f
10%
2
RF INPUT
LEVEL = -28dBm
PULSE MODULATED @ 10kHz
f = 110MHz
1998 Feb 10
t1 = –1.36.0µs t2 = 440.0ns ∆t = 1.800µs1/∆t = 555.6kHz
SR00039
Figure 10. SA639 RSSI Fall Time
13
Page 14
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
1 50mV2 4 1.0V50mV 2µs/div
POSTAMP
1
OUTPUT
SWITCH
4
ENABLE
RF = 110MHz
DEV = 288kHz
DATA RATE = 576kHz SINE
LO = 119.8MHz
V
= 3V, T = 27°C
CC
DATA
SWITCH
OUTPUT
2
ALL CHANNELS ARE DC COUPLED
SA639
DATA SWITCH OPEN
Figure 11. SA639 System Dynamic Response
12500mV 2.00V 0.00s 50.0ns/ 2 RUN
SR00040
VCC = 3V, T = 25°C
SWITCH INPUT = 1.6V
SWITCH OUTPUT
1
SWITCH ENABLE
2
DC
V1 (1) = 0.000V V2 (1) = 1.609V ∆V (1) = 1.609V
1998 Feb 10
SR00041
Figure 12. SA639 Data Switch Activation Time
14
Page 15
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1
SA639
1998 Feb 10
15
Page 16
Philips Semiconductors Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
SA639
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print code Date of release: 2-98
Document order number: 9397 750 03301
1998 Feb 10
16
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