Datasheet SA601DK Datasheet (Philips)

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

1

December 15, 1994 853-1733 14477

DESCRIPTION

The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
–2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.

FEATURES

•Low current consumption: 7.4mA nominal, 4.4mA with the mixer

powered-down

•Outstanding LNA noise figure: 1.6dB at 900MHz

•High system power gain: 18dB (LNA + Mixer) at 900MHz

•Excellent gain stability versus temperature and supply voltage

•External >-7dBm LO can be used to drive the mixer

PIN CONFIGURATION

DK Package

1
2
3
4
5
6
7
8
9

10

11

12

13

14

20
19
18
17
16
15

V

CC

GND
LNA OUT
GND

MIXER IN
GND
MIXER OUT

MIXER OUT
GND

V

CC

V

CC

LNA GND

LNA IN

GND
GND
GND

MIXER PWRDN

GND

LOIN1
LOIN2

APPLICATIONS

•900MHz cellular front-end (NADC, GSM, AMPS, TACS)

•900MHz cordless front-end (CT1, CT2)

•900MHz receivers

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)

-40 to +85°C

SA601DK 1563

BLOCK DIAGRAM

4321 5

20 19 18 17 16

76 1098

15 14 13 12 11

GNDMIXER

PWRDN

LO IN1 LO IN2

V

CC

GND

MIXER

IN GND

MIXER

OUT GND

LNA

LO

RF

IF

GND LNA IN GND

IF

GND

LNA
OUT

GNDGND

MIXER

OUT V

CC

V

CC

BUFFER

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

2

ABSOLUTE MAXIMUM RATINGS

3

SYMBOL PARAMETER RATING UNITS

V

CC

Supply voltage

1

-0.3 to +6 V

V

IN

Voltage applied to any other pin -0.3 to (VCC + 0.3) V

P

D

Power dissipation, TA = 25°C (still air)

2

20-Pin Plastic SSOP 980 mW

T

JMAX

Maximum operating junction temperature 150 °C

P

MAX

Maximum power input/output +20 dBm

T

STG

Storage temperature range –65 to +150 °C

NOTE:

1. Transients exceeding 8V on V

CC

pin may damage product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θ

JA

: 20-Pin SSOP = 110°C/W

3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC

Supply voltage 2.7 to 5.5 V

T

A

Operating ambient temperature range -40 to +85 °C

T

J

Operating junction temperature -40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNITS

7.4

ICCSupply current

Mixer power-down input low 4.4

mA

V

LNA–IN

LNA input bias voltage 0.78 V

V

LNA–OUT

LNA output bias voltage 2.1 V

V

MX–IN

Mixer RF input bias voltage 0.94 V

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

3

AC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; LOIN = -7dBm @ 964MHz; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

-3σ TYP +3σ

UNITS

S

21

Amplifier gain 881MHz 10 11.5 13 dB

∆S21/∆T Gain temperature sensitivity 881MHz 0.003 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.2GHz 0.01 dB/MHz

S

12

Amplifier reverse isolation 881MHz -20 dB

S

11

Amplifier input match

1

881MHz -10 dB

S

22

Amplifier output match

1

881MHz -10 dB

P

-1dB

Amplifier input 1dB gain compression 881MHz -16 dBm

IP3 Amplifier input third order intercept f

2

– f1 = 25kHz, 881MHz -3.5 -2 -0.5 dBm

NF Amplifier noise figure 881MHz 1.3 1.6 1.9 dB

VG

C

Mixer voltage conversion gain: RP = RL = 1kΩ

fS = 881MHz, fLO = 964MHz,

f

IF

= 83MHz

18.0 19.5 21.0 dB

PG

C

Mixer power conversion gain: RP = RL = 1kΩ

fS = 881MHz, fLO = 964MHz,

f

IF

= 83MHz

5.0 6.5 8.0 dB

S

11M

Mixer input match

1

881MHz -10 dB

NF

M

Mixer SSB noise figure 881MHz 8.0 9.5 11.0 dB

P

-1dB

Mixer input 1dB gain compression 881MHz -13 dBm

IP3

M

Mixer input third order intercept f

2

– f1 = 25kHz, 881MHz -3.5 -2 -0.5 dBm

IP

2INT

Mixer input second order intercept 881MHz 12 dBm

P

RFM-IF

Mixer RF feedthrough 881MHz -7 dB

P

LO-IF

LO feedthrough to IF 881MHz -25 dB

P

LO-RFM

LO to mixer input feedthrough 881MHz -38 dB

P

LO-RF

LO to LNA input feedthrough 881MHz -40 dB

P

LNA–RFM

LNA output to mixer input 881MHz -40 dB

P

RFM–LO

Mixer input to LO feedthrough 881MHz -23 dB

LO

IN

LO drive level 964MHz -7 dBm

NOTE:

1. Simple L/C elements are needed to achieve specified return loss.

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

4

Figure 1. Application Circuit

1
2
3
4
5
6
7
8
9

10

20
19
18
17
16
15
14
13
12
11

Vcc
GND
LNA IN
GND
GND

MIXER PD
GND
LO IN
LO IN

Vcc

GND

LNA OUT

GND

MIXER IN

GND
MIXER OUT
MIXER OUT

GND

GND

Vcc

LNA IN

C1

C15

L1
56nH

C2

2.7pF

100pF

C11

100pF

C12

2.2pF

LNA OUT

C10

100pF

MIXER IN

C9

4.7pF

C13

100pF

270nH

C6

8.2pF

L = 110 mils

L = 95 mils

w = 15 mils

w = 15 mils

V

CC

1µF

100pF

SA601

C4

U1

V

CC

J1

C14

100nF

J2
EXT LO

(-7dBm, 964MHz)

J5

L = 190 mils

w = 15 mils

J4

V

CC

18pF

2.2k

C8

100nF

MIXER OUT

J3

(50Ω, 83MHz)

C3

100pF

33pF

L3

L2

470nH

R2

C5

C7

L = 535 mils

w = 10 mils

L = 535 mils

w = 10 mils

*SEE MIXER POWER GAIN NOTE BELOW

*

**

** SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK

**

***

***

SEE MIXER FILTER INTERFACE NOTE BELOW

CIRCUIT TECHNOLOGY
LNA

Impedance Match: Intrinsic return loss at the input and output ports

is 7dB and 9dB, respectively. With no external matching, the
associated LNA gain is ≈10dB and the noise figure is ≈1.4dB.
However, the return loss can be improved at 881MHz using
suggested L/C elements (Figure 1) as the LNA is unconditionally
stable.

Noise Match: The LNA achieves 1.6dB noise figure at 881MHz
when S

11

= -10dB. Further improvements in S11 will slightly

decrease the NF and increase S

21

.

Temperature Compensation: The LNA has a built-in temperature
compensation scheme to reduce the gain drift to 0.003dB/°C from
–40°C to +85°C.

Supply Voltage Compensation: Unique circuitry provides gain
stabilization over wide supply voltage range. The gain changes no
more than 0.5dB when V

CC

increases from 3V to 5V.

LO Drive Level: Resistor R1 can be replaced by an inductor of

4.7nH and C13 should be adjusted to achieve a good return loss at
the LO port. Under this condition, the mixer will operate with less
than -10dBm LO drive.

IP3 Performance: C9 between Pin 16 and ground can be removed
to introduce 3dB mismatch loss, while improving the IP3 to +3dBm.
The associated noise figure is 11dB.

Mixer

Input Match: The mixer is configured for maximum gain and best

noise figure. The user needs to supply L/C elements to achieve this
performance.

Power Gain: The gain can be increased by approximately 1.5dB by
placing R2 across C7, instead of C5.

Power Down: The mixer can be disabled by connecting Pin 7 to
ground. When the mixer is disabled, 3mA is saved.

Power Combining: The mixer output circuit features passive
power combining (patent pending) to optimize conversion gain and
noise figure performance without using extra DC current or
degrading the IP3. For IF frequencies significantly different than
83MHz, the component values must be altered accordingly.

Filter Interface: For system integration where a high impedance
filter of 1kΩ is to be cascaded at the mixer IF output, capacitors C5
and C6 need to be changed to 27pF and 1000pF, respectively .

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

5

Figure 2. SA601 Demoboard Layout (Not Actual Size)

Bottom View

Top View

Via Layer

Silk Screen

R1

C11

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

6

TYPICAL PERFORMANCE CHARACTERISTICS

CH1 S

22

1 U FS 4: 99.543 Ω -85.949 Ω 8.937 pF

START 200.000 000 MHz STOP 1200.000 000 MHz

1:

2:

3:

31.48 Ω

-14.217 Ω
900 MHz

44.82 Ω

-30.191 Ω
600 MHz

58.725 Ω

-50.83 Ω
400 MHz

200.000 000 MHz

Figure 3. LNA Input and Output Match (at Device Pin)

CH1 S

11

1 U FS 4: 63.852 Ω -160.23 Ω 4.9269 pF

200.000 000 MHz

START 200.000 000 MHz STOP 1200.000 000 MHz

1:

2:

3:

27.471 Ω

-35.48 Ω
600 MHz

21.286 Ω

-12.381 Ω
900 MHz

36.43 Ω

-70.445 Ω
400 MHz

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

7

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

CH1

S

12

100mU FS 4: 35.343 mU -76.128 °

200.000 000 MHz

START 200.000 000 MHz STOP 1200.000 000 MHz

1:

2:

3:

89.561mU

61.127 °

900 MHz

74.51mU

64.608 °

600 MHz

58.082mU

67.162 °

400 MHz

CH1

S

21

7 U FS 4: 6.2863 U -150.58 °

200.000 000 MHz

START 200.000 000 MHz STOP 1200.000 000 MHz

1:

2:

3:

3.2504U

91.219 °

900 MHz

4.6877U

112.03 °

600 MHz

5.3895U

130.33 °

400 MHz

Figure 4. LNA Transmission and Isolation Characteristics (at Device Pin)

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

8

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

CH1

S

11

1 U FS 4: 10.867Ω 1.6426Ω 1.2543 nH

200.000 000 MHz

START 200.000 000 MHz STOP 1200.000 000 MHz

1: 6.7168 Ω

9.5952 Ω
900 MHz

Figure 5. Mixer RF Input Match (at Device Pin)

Table 1. Typical LNA and Mixer S-Parameters

LNA Mixer

f S

11

S

22

S

21

S

12

S

11

200MHz 63.852Ω – j 160.23Ω 99.543Ω – j 85.949Ω 6.2863U ∠ 150.58° 35.343mU ∠ 76.128° 10.867Ω + j 1.6426Ω
300MHz 44.879Ω – j 101.69Ω 73.387Ω – j 67.707Ω 5.8096U ∠ 140.47° 47.946mU ∠ 71.169° 10.4Ω + j 3.4609Ω
400MHz 36.43Ω – j 70.445Ω 58.725Ω – j 50.83Ω 5.3895U ∠ 130.33° 58.082mU ∠ 67.162° 10.067Ω + j 4.897Ω
500MHz 30.395Ω – j 48.393Ω 49.928Ω – j 38.813Ω 5.0428U ∠ 120.5° 66.44mU ∠ 66.388° 9.394Ω + j 6.0142Ω
600MHz 27.471Ω – j 35.48Ω 44.82Ω – j 30.191Ω 4.6877U ∠ 112.03° 74.51mU ∠ 64.608° 8.8945Ω + j 7.2227Ω
700MHz 24.428Ω – j 25Ω 39.268Ω – j 24.502Ω 4.2409U ∠ 104.44° 82.235mU ∠ 65.002° 8.1353Ω + j 8.1597Ω
800MHz 22.434Ω – j 17.255Ω 34.664Ω – j 18.59Ω 3.7491U ∠ 97.765° 86.582mU ∠ 62.743° 7.976Ω + j 9.1958Ω

900MHz 21.286Ω – j 12.381Ω 31.48Ω – j 14.217Ω 3.2504U ∠ 91.219° 89.561mU ∠ 61.127° 6.7168Ω + j 9.5952Ω
1000MHz 20.261Ω – j 8.7109Ω 27.887Ω – j 10.77Ω 2.8785U ∠ 84.957° 95.135mU ∠ 60.539° 6.2393Ω + j 10.271Ω
1100MHz 19.718Ω – j 6.252Ω 25.741Ω – j 8.2607Ω 2.5752U ∠ 82.893° 97.348mU ∠ 62.202° 6.0791Ω + j 10.571Ω
1200MHz 19.101Ω – j 4.9316Ω 23.584Ω – j 6.2715Ω 2.1386U ∠ 80.257° 96.558mU ∠ 61.563° 5.8185Ω + j 10.288Ω

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

9

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

CH1 S

11 log MAG 2 dB/ REF -5 dB

-40°C

85°C

25°C

START 800.000 000 MHz STOP 1 200. 000 000 MHz

Mixer RF Input Match vs. Frequency

(V

CC

= 3V)

CH1 S

12 log MAG 5 dB/ REF -10 dB

START 800.000 000 MHz STOP 1 200. 000 000 MHz

CH1 S

21 log MAG 1 dB/ REF 10 dB

START 800.000 000 MHz STOP 1 200. 000 000 MHz

CH1 S

22 log MAG 3 dB/ REF -10 dB

START 800.000 000 MHz STOP 1 200. 000 000 MHz

CH1 S

11 log MAG 1 dB/ REF -10 dB

START 800.000 000 MHz STOP 1 200. 000 000 MHz

-40°C
85°C

25°C

LNA Gain (S21) vs. Frequency

(V

CC

= 3V)

-40°C

85°C
25°C

-40°C
85°C

25°C

-40°C
85°C

25°C

LNA Isolation (S12) vs. Frequency

(V

CC

= 3V)

LNA Input Match (S

11

) vs. Frequency

(V

CC

= 3V)

LNA Output Match (S

22

) vs. Frequency

(V

CC

= 3V)

9

Icc (mA)

VCC (V)

ICC vs. VCC and Temperature

2.5 3 3.5 4 4.5 5 5.5

8.5

8

7.5

7

6.5

6

5.5

5

–40°C

25°C

+85°C

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

10

7

6.5

6

5.5

5

2.5 3 3.5 4 4.5 5 5.5

GAIN (dB)

VCC (V)

Mixer Gain @ 83MHz vs. VCC and Temperature

3

GAIN (dB)

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

2

1

0

–1

–2

–3

–4

–5

–6

–7

Mixer IP3 @ 83MHz vs. VCC and Temperature

–40°C

25°C

+85°C

–40°C

25°C
+85°C
+70°C

12

NF (dB)

2.5 3 3.5 4 4.5 5 5.5

V

CC

(V)

Mixer NF @ 83MHz vs. VCC and Temperature

11.5

11

10.5

10

9.5

9

–40°C

25°C

+85°C

–36

dB

VCC (V)

LO to Mixer in Feedthrough vs. V

CC

–37

–38

–39

–40

2.5 3 3.5 4 4.5 5 5.5

–36

dB

VCC (V)

LO to LNA Input Feedthrough vs. V

CC

–37

–38

–39

–40

2.5 3 3.5 4 4.5 5 5.5

–20

dB

VCC (V)

Mixer Input to LO Feedthrough vs. V

CC

2.5 3 3.5 4 4.5 5 5.5

–21

–22

–23

–24

–25

Philips Semiconductors RF Communications Products Product specification

SA601Low voltage LNA and mixer - 1GHz

December 15, 1994

11

–23

dB

VCC (V)

LO Feedthrough to IF vs. V

CC

2.5 3 3.5 4 4.5 5 5.5

–24

–25

–26

–27

–5

dB

VCC (V)

Mixer RF Feedthrough vs. V

CC

2.5 3 3.5 4 4.5 5 5.5

–6

–7

–8

–38

dB

VCC (V)

LNA Output to Mixer Input vs. V

CC

2.5 3 3.5 4 4.5 5 5.5

–39

–40

–41

–42

12.50

GAIN (dB)

VCC (V)

LNA Gain vs. VCC and Temperature

2.5 3 3.5 4 4.5 5 5.5

12.00

11.50

11.00

10.50

–40°C

25°C

+85°C

4.00

dB

VCC (V)

LNA IP3 vs. VCC and Temperature

2.5 3 3.5 4 4.5 5 5.5

2.00

0.00

–2.00

–4.00

–6.00

–8.00

–10.00

–40°C

25°C

+85°C

2.50

dB

VCC (V)

LNA NF vs. VCC and Temperature

2.5 3 3.5 4 4.5 5 5.5

2.00

1.50

1.00

0.50

0.00

–40°C

25°C

+85°C