Datasheet NTE980 Datasheet (NTE)

Page 1
NTE980
Integrated Circuit
CMOS, Micropower Phase–Locked Loop (PLL)
Description:
The NTE980 CMOS Micropower Phase–Locked Loop (PLL) consists of a low–power, linear voltage– controlled oscillator (VCO) and two different phase comparators having a common signal–input am­plifier and a common comparator input in a 16–Lead type package. A 5.2V zener diode is provided for supply regulation if necessary.
D Very Low Power Consumption: 70µW (Typ) @ VCO fo = 10kHz, VDD = 5V D Operating Frequency Range up to 1.4MHz (Typ) @ V D Low Frequency Drift: 0.04%/°C (Typ) @ V
DD
= 10V
D Choice of Two Phase Comparators:
Exclusive–OR Network (I)
DD
w
/Phase–Pulse Output for Lock Indication (II)
= 10V
Edge–Controlled Memory Network
D High VCO Linearity: < 1% (Typ) @ V D VCO Inhibit Control for ON–OFF Keying and Ultra–Low Standby Power Consumption D Source–Follower Output of VCO Control Input (Demod. Output) D Zener Diode to Assist Supply Regulation D Standardized, Symmetrical Output Characteristics D 100% Tested for Quiescent Current at 20V D 5V, 10V, and 15V Parametric Ratings
= 10V, RI = 5k
DD
Applications:
D FM Demodulator and Modulator D Frequency Synthesis and Multiplication D Frequency Discriminator D Signal Conditioning
D FSK – Modems D Data Synchronization D Voltage–to–Frequency Conversion D Tone Decoding
Absolute Maximum Ratings:
DC Supply Voltage Range (Voltages referenced to VSS terminal), V
DD
–0.5 to +20V. . . . . . . . . . . .
Input Voltage Range, All Inputs –0.5 to V
DC Input Current, Any One Input ±10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
T
= +60° to +85°C Derate Linearly at 12mW/°C to 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Device Dissipation Per Output Transistor (T Operating Temperature Range, T Storage Temperature Range, T Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec Max), T
= –40° to +60°C), P
A
A
stg
D
= –40° to +85°C) 100mW. . . . . . . . . . . . . . . . . . . . . . .
A
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265°C. . . . . . . . . . .
+0.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page 2
Recommended Operating Conditions: (TA = –40° to +85°C)
Parameter Min Typ Max Unit
Supply Voltage Range VCO Section:
As Fixed Oscillator
3 18 V
Phase–Lock–Loop Operation 5 18 V
Supply Voltage Range Phase Comparator Section:
Comparators
3 18 V
VCO Operation 5 18 V
Static Electrical Characteristics: (TA = +25°C unless otherwise specified)
Test Conditions
Parameter Symbol
V
O
VCO Section
Output Low (Sink) Current IOLMin 400mV 0V, 5V 5V 0.51 1.0 mA
500mV 0V, 10V 10V 1.3 2.6 mA
1.5V 0V, 15V 15V 3.4 6.8 mA
Output High (Source) Current IOHMin 4.6V 0V, 5V 5V –0.51 –1.0 mA
2.5V 0V, 5V 5V –1.6 –3.2 mA
9.5V 0V, 10V 10V –1.3 –2.6 mA
13.5V 0V, 15V 15V –3.4 –6.8 mA
Output Voltage: Low–Level VOLMax
Pin4
driving
CMOS
CMOS
Output Voltage: High–Level VOHMax
e.g.
Pin3
Input Current IINMax 0V, 18V 18V ±10
Phase Comparator Section
Total Device Current
Pin14 = Open, Pin5 = V
DD
IDDMax 0V, 5V 5V 0.1 0.2 mA
0V, 10V 10V 0.5 1.0 mA 0V, 15V 15V 0.75 1.5 mA 0V, 20V 20V 2.0 4.0 mA
Pin14 = VSS or VDD, Pin5 = V
DD
0V, 5V 5V 10.0 20.0 µA 0V, 10V 10V 20.0 40.0 µA 0V, 15V 15V 40.0 80.0 µA 0V, 20V 20V 80.0 160.0 µA
Output Low (Sink) Current IOLMin 400mV 0V, 5V 5V 0.51 1.0 mA
500mV 0V, 10V 10V 1.3 2.6 mA
1.5V 0V, 15V 15V 3.4 6.8 mA
Output High (Source) Current IOHMin 4.6V 0V, 5V 5V –0.51 –1.0 mA
2.5V 0V, 5V 5V –1.6 –3.2 mA
9.5V 0V, 10V 10V –1.3 –2.6 mA
13.5V 0V, 15V 15V –3.4 –6.8 mA
V
IN
V
DD Min Typ Max Unit
0V, 5V 5V 0 0.05 V
0V, 10V 10V
0 0.05 V
0V, 15V 15V 0 0.05 V
0V, 5V 5V 4.95 5.0 V 0V, 10V 10V 9.95 10.0 V 0V, 15V 15V 14.95 15.0 V
–5
±0.1 µA
Page 3
Static Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Test Conditions
Parameter Symbol
V
O
V
IN
V
DD Min Typ Max Unit
Phase Comparator Section (Contd)
DC Coupled Signal Input and
Comparator Input Voltage Sensitivity Low Level
Low Level
VILMax 0.5V, 4.5V 5V 1.5 V
1V, 9V 10V 3.0 V
1.5V, 13.5V 15V 4.0 V
High Level VIHMax 0.5V, 4.5V 5V 3.5 V
1V, 9V 10V 7.0 V
1.5V, 13.5V 15V 11.0 V Input Current (Except Pin14) IINMax 0V, 18V 18V ±10 3–State Leakage Current I
Max 0V, 18V 0V, 18V 18V ±10
OUT
55
±0.1 µA ±0.1 µA
Electrical Characteristics: (TA = +25°C)
Test Conditions
Parameter Symbol
VCO Section
Operating Power
Dissipation R2 =
Maximum Operating
P
f
max
fo = 10kHz, R1 = 1MΩ,
D
C1 = 50pF,
V
VCO =
VCOIN =
DD
2
R1 = 10k 5V 0.3 0.6 MHz
Frequency R2 = ∞,
VCO = V
VCOIN = V
DD
R1 = 5k 5V 0.5 0.8 MHz
Linearity VCOIN = 2.5V±0.3V R1 = 10k 5V 1.7 %
VCOIN = 5.0V±1.0V R1 = 100k 10V 0.5 % VCOIN = 5.0V±2.5V R1 = 400k 10V 4.0 % VCOIN = 7.5V±0.3V R1 = 100k 15V 0.5 % VCOIN = 7.5V±5.0V R1 = 1M 15V 7.0 %
f
Temperature–Frequency
= 0 5V ±0.12 %/°C
MIN
Stability: No Frequency Offset
No Frequency Offset
Frequency Offset f
0 0 5V ±0.09 %/°C
MIN
Output Duty Cycle 5, 10, 15V 50 % Output Transition Times t
THL
, t
TLH
V
DD Min Typ Max Unit
5V 70 140 µW 10V 800 1600 µW 15V 3000 6000 µW
10V 0.6 1.2 MHz 15V 0.8 1.6 MHz
10V 1.0 1.4 MHz 15V 1.4 2.4 MHz
10V ±0.04 %/°C 15V ±0.015 %/°C
10V ±0.07 %/°C 15V ±0.03 %/°C
5V 100 200 ns 10V 50 100 ns 15V 40 80 ns
Page 4
Electrical Characteristics (Cont’d): (TA = +25°C)
Test Conditions
Parameter Symbol
VCO Section (Contd)
Source–Follower Output
VCOIN–V
RS > 10k 5V 1.8 2.5 V
DEM
(Demodulated Output): Offset Voltage
Offset Voltage
Linearity VCOIN = 2.5V±0.3V RS = 100k 5V 0.3 %
VCOIN = 5.0V±2.5V RS = 300k 10V 0.7 %
VCOIN = 7.5V±5.0V RS = 500k 15V 0.9 % Zener Diode Voltage V Zener Dynamic Resistance R
Z Z
IZ = 50µA 4.45 5.50 6.15 V
IZ = 1mA 40
Phase Comparator Section
Pin14 (Signal In) Input
R
14
Resistance
AC Coupled Signal Input
fIN = 100kHz, Sine Wave, Note 1 5V 180 360 mV
Voltage Sensitivity (Peak–to–Peak)
(Peak–to–Peak)
Propagation Delay Time
t
PHL
(Pin14 to Pin13) High to Low Level
High to Low Level
Low to High Level t
3–State Propagation Delay
PLH
t
PHZ
Time (Pin14 to Pin13) High Level to
High Level to Low Impedance
Low Level to
t
PLZ
High Impedance
Input Rise or Fall Times
tr, t
f
Comparator Input (Pin3)
Signal Input (Pin14) 5V 500.0 µs
Output Transition Times t
THL
, t
TLH
V
DD Min Typ Max Unit
10V 1.8 2.5 V 15V 1.8 2.5 V
5V 1.0 2.0 M 10V 0.2 0.4 M 15V 0.1 0.2 M
10V 330 660 mV 15V 900 1800 mV
5V 225 450 ns 10V 100 200 ns 15V 65 130 ns
5V 350 700 ns 10V 150 300 ns 15V 100 200 ns
5V 225 450 ns 10V 100 200 ns 15V 95 190 ns
5V 285 570 ns 10V 130 260 ns 15V 95 190 ns
5V 50.0 µs 10V 1.0 µs 15V 0.3 µs
10V 20.0 µs 15V 2.5 µs
5V 100 200 ns 10V 50 100 ns 15V 40 80 ns
Note 1. For sine wave, the frequency must be greater than 10kHz for Phase Comparator II.
Page 5
Pin Connection Diagram
Phase Pulses
Phase Comp 1 Out
Comparator Input
VCO Output
Inhibit
C1 (1) C1 (2)
1 2
3 4 5 6 7 8
V
SS
16 9
16
V
DD
Zener
15 14
Signal Input
13
Phase Comp 2 Out R2 to V
12
R1 to V
11 10
Demodulator Output
9
VCO Input
SS
SS
.245
(6.22)
Min
.260 (6.6) Max
18
.785 (19.9) Max
.300 (7.62)
.200 (5.08)
Max
.100 (2.54)
.700 (17.7)
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