Datasheet 2N7000, 2N7002, NDS7002A Datasheet (Fairchild)

2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

November 1995

These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver

High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.

DS(ON)

.

pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.

___________________________________________________________________________________________

D

G

S

TO-92

2N7000

Absolute Maximum Ratings T

Symbol Parameter

V

DSS

V

DGR

V

GSS

I

D

P

D

T

J,TSTG

T

L

THERMAL CHARACTERISTICS

R

JA

θ

Drain-Source Voltage 60 V

Drain-Gate Voltage (RGS < 1 MΩ)

Gate-Source Voltage - Continuous

- Non Repetitive (tp < 50µs)
Maximum Drain Current - Continuous 200 115 280 mA

- Pulsed 500 800 1500

Maximum Power Dissipation 400 200 300 mW

o

Derated above 25
Operating and Storage Temperature Range -55 to 150 -65 to 150 °C

Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds

Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

C 3.2 1.6 2.4 mW/°C

(TO-236AB)

2N7002/NDS7002A

= 25°C unless otherwise noted

A

G

2N7000 2N7002 NDS7002A

60 V

±20
±40

300 °C

D

S

Units

V

© 1997 Fairchild Semiconductor Corporation

2N7000.SAM Rev. A1

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV
I

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA

DSS

Zero Gate Voltage Drain Current VDS = 48 V, V

GS

= 0 V

All

2N7000

60 V

1 µA

TJ=125°C 1 mA

2N7002

NDS7002A

2N7000
2N7002

NDS7002A

2N7000
2N7002

NDS7002A

1 µA

10 nA

100 nA

-10 nA

-100 nA

I

GSSF

I

GSSR

VDS = 60 V, V

GS

= 0 V

Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V

VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

TJ=125°C 0.5 mA

ON CHARACTERISTICS (Note 1)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage V

= V

, I

GS

, I

GS

= 1 mA

D

= 250 µA

D

DS

V

= V

DS

Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA

2N7000
2N7002

NDS7002A

2N7000

0.8 2.1 3 V
1 2.1 2.5

1.2 5

Ω

TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, ID = 500 mA

2N7002

1.2 7.5

TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA 1.7 7.5

TJ =100C 2.4 13.5

VGS = 10 V, ID = 500 mA NDS7002A 1.2 2

TJ =125°C 2 3.5
VGS = 5.0 V, ID = 50 mA 1.7 3

TJ =125°C 2.8 5

V

DS(ON)

Drain-Source On-Voltage VGS = 10 V, ID = 500 mA

2N7000

0.6 2.5 V
VGS = 4.5 V, ID = 75 mA 0.14 0.4
VGS = 10 V, ID = 500mA

2N7002

0.6 3.75
VGS = 5.0 V, ID = 50 mA 0.09 1.5
VGS = 10 V, ID = 500mA

NDS7002A

0.6 1
VGS = 5.0 V, ID = 50 mA 0.09 0.15

2N7000.SAM Rev. A1

Electrical Characteristics T

= 25oC unless otherwise noted

A

Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)

I

D(ON)

g

On-State Drain Current VGS = 4.5 V, VDS = 10 V

VGS = 10 V, VDS > 2 V
VGS = 10 V, VDS > 2 V

FS

Forward Transconductance VDS = 10 V, ID = 200 mA

VDS > 2 V
VDS > 2 V

DS(on)

DS(on)

DS(on)

DS(on)

, ID = 200 mA
, ID = 200 mA

2N7000
2N7002

NDS7002A

2N7000
2N7002

NDS7002A

75 600 mA
500 2700
500 2700
100 320 mS

80 320

80 320

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

t

on

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance

f = 1.0 MHz

Reverse Transfer Capacitance
Turn-On Time

VDD = 15 V, RL = 25 Ω,

All
All
All

2N7000

20 50 pF
11 25 pF

4 5 pF

10 ns

ID = 500 mA, VGS = 10 V,
R

= 25

GEN

VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,

R

= 25 Ω

GEN

t

off

Turn-Off Time

VDD = 15 V, RL = 25 Ω,

2N700

NDS7002A

2N7000

20

10 ns

ID = 500 mA, VGS = 10 V,
R

= 25

GEN

VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,

R

= 25 Ω

GEN

2N700

NDS7002A

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

I

SM

V

SD

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward
Voltage

VGS = 0 V, IS = 115 mA (Note 1)
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2

2N7002

NDS7002A

2N7002

NDS7002A

2N7002

115 mA
280

0.8 A

1.5

0.88 1.5 V

2N7000.SAM Rev. A1

D

Typical Electrical Characteristics

2N7000 / 2N7002 / NDS7002A

2

1.5

V = 10V

GS

9.0

8.0

7.0

6.0

1

0.5

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

5.0

4.0

3.0

3

V =4.0V

GS

2.5

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 0.4 0.8 1.2 1.6 2

4.5

5.0

I , DRAIN CURRENT (A)

D

6.0

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

2

V = 10V

1.75

1.5

1.25

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5

GS

I = 500mA

D

1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3

V = 10V

2.5

1.5

GS

T = 125°C

2

J

25°C

1

DS(on)

R , NORMALIZED

0.5

DRAIN-SOURCE ON-RESISTANCE

0

0 0.4 0.8 1.2 1.6 2

I , DRAIN CURRENT (A)

D

-55°C

7.0

8.0

9.0
10

Figure 3. On-Resistance Variation

with Temperature

2

V = 10V

DS

1.6

1.2

0.8

D

I , DRAIN CURRENT (A)

0.4

0

0 2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature

1.1

1.05

1

0.95

th

0.9

V , NORMALIZED

0.85

GATE-SOURCE THRESHOLD VOLTAGE

0.8

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

V = V

DS GS

I = 1 mA

D

2N7000.SAM Rev. A1

Pulse Width

Typical Electrical Characteristics (continued)

2N7000 / 2N7002 /NDS7002A

1.1

I = 250µA

D

1.075

1.05

1.025

1

DSS

BV , NORMALIZED

0.975

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.925

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation

with Temperature

60
40

20

10

5

CAPACITANCE (pF)

2

1

1 2 3 5 10 20 30 50

f = 1 MHz
V = 0V

GS

V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

2

V = 0V

GS

1

0.5

T = 125°C

0.1

0.05

0.01

0.005

S

I , REVERSE DRAIN CURRENT (A)

0.001

J

0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)

SD

25°C

-55°C

Figure 8. Body Diode Forward Voltage Variation with

10

V = 25V

iss

C

oss

C

rss

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

DS

I =500mA

D

280mA

115mA

0 0.4 0.8 1.2 1.6 2

Q , GATE CHARGE (nC)

g

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

in

10%

out

t

on

10%

50%

r

t

90%

t

d(off)

V

DD

t

d(on)

V

IN

V

GS

R

GEN

G

R

L

D

V

OUT

DUT

Input, V

S

Figure 11. Figure 12. Switching Waveforms

50%

t

off

90%

10%

90%

2N7000.SAM Rev. A1

t

f

Inverted

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Typical Electrical Characteristics (continued)

3
2

1

0.5

RDS(ON) Limit

0.1

0.05

D

I , DRAIN CURRENT (A)

0.01

0.005

V = 10V

GS

SINGLE PULSE

T = 25°C

A

1 2 5 10 20 30 60 80

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 13. 2N7000 Maximum

Safe Operating Area

3
2

1

RDS(ON) Limit

0.5

0.1

0.05

D

I , DRAIN CURRENT (A)

0.01

0.005

V = 10V

GS

SINGLE PULSE

T = 25°C

A

1 2 5 10 20 30 60 80

V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

1s

Figure 15. NDS7000A Maximum

Safe Operating Area

10s

DC

100ms

10ms

100ms

1s

10ms

100us

1ms

100us

1ms

3
2

1

0.5

RDS(ON) Limit

0.1

0.05

V = 10V

D

I , DRAIN CURRENT (A)

0.01

0.005

GS

SINGLE PULSE

T = 25°C

A

1 2 5 10 20 30 60 80

V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10s

10ms

100ms

1s

Figure 14. 2N7002 Maximum

Safe Operating Area

100us

1ms

1

D = 0.5

0.5

R (t) = r(t) * R

θ

0.2

0.1

0.05

r(t), NORMALIZED EFFECTIVE

0.02

0.01

0.2

0.1

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

Figure 16. TO-92, 2N7000 Transient Thermal Response Curve

1

JA

R = (See Datasheet)

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

J

Duty Cycle, D = t /t

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

0.01

Single Pulse

0.002

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve

1

R (t) = r(t) * R

θ

JA

R = (See Datasheet)

θ

JA

P(pk)

t

1

t

2

T - T = P * R (t)

J

Duty Cycle, D = t /t

θ

JA

θ

JAA

1 2

θ

JA

θ

JAA

1 2

2N7000.SAM Rev. A1

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not intended to be an exhaustive list of all such trademarks.

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

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

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1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G