Page 1
May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE
NDB508A / NDB508AE / NDB508B / NDB508BE
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
_____________________________________________________________________
19 and 17A, 80V. R
= 0.08 and 0.10Ω.
DS(ON)
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
D
Absolute Maximum Ratings T
Symbol Parameter
V
V
V
I
P
TJ,T
T
DSS
DGR
GSS
D
D
L
Drain-Source Voltage 80 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous 19 17 A
- Pulsed 57 51 A
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
= 25°C unless otherwise noted
C
NDP508A NDP508AE
NDB508A NDB508AE
G
S
NDP508B NDP508BE
NDB508B NDB508BE Units
80 V
±40 V
75 W
0.5
W/°C
275 °C
© 1997 Fairchild Semiconductor Corporation
NDP508.SAM
Page 2
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Type Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
E
AS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current 19 A
VDD = 25 V, ID = 19 A NDP508AE
NDP508BE
NDB508AE
NDB508BE
55 mJ
OFF CHARACTERISTICS
BV
Drain-Source Breakdown
DSS
VGS = 0 V, ID = 250 µA ALL 80 V
Voltage
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain
Current
VDS = 80 V,
V
= 0 V
GS
TJ = 125°C
ALL 250 µA
1 mA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
ALL -100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS,
ID = 250 µA
VGS = 10 V,
ID = 9.5 A
TJ = 125°C
ALL 2 2.9 4 V
1.4 2.3 3.6 V
NDP508A
0.057 0.08
NDP508AE
NDB508A
0.097 0.16
0.1
VGS = 10 V,
ID = 8.5 A
TJ = 125°C
NDB508AE
NDP508B
NDP508BE
NDB508B
0.2
I
D(on)
TJ = 125°C
NDB508BE
On-State Drain Current VGS = 10 V, VDS = 10 V NDP508A
19 A
NDP508AE
NDB508A
NDB508AE
NDP508B
17 A
NDP508BE
NDB508B
NDB508BE
g
FS
Forward Transconductance VDS = 10 V, ID = 9.5 A ALL 6 9.6 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance ALL 200 250 pF
f = 1.0 MHz
Reverse Transfer Capacitance ALL 60 90 pF
ALL 750 900 pF
Ω
Ω
Ω
Ω
NDP508.SAM
Page 3
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
t
D(ON)
t
r
t
D(OFF)
t
f
Q
Q
Q
g
gs
gd
Turn - On Delay Time VDD = 40 V, ID = 19 A,
Turn - On Rise Time ALL 66 110 nS
VGS = 10 V, R
GEN
= 15 Ω
ALL 8.5 20 nS
Turn - Off Delay Time ALL 31 50 nS
Turn - Off Fall Time ALL 48 80 nS
Total Gate Charge VDS = 64 V,
Gate-Source Charge ALL 4.5 nC
ID = 19 A, VGS = 10 V
ALL 23.5 34 nC
Gate-Drain Charge ALL 11.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current NDP508A
19 A
NDP508AE
NDB508A
NDB508AE
NDP508B
17 A
NDP508BE
NDB508B
NDB508BE
ISM Maximum Pulsed Drain-Source Diode Forward Current NDP508A
57 A
NDP508AE
NDB508A
NDB508AE
NDP508B
51 A
NDP508BE
NDB508B
NDB508BE
V
SD
(Note 2)
t
rr
I
rr
Drain-Source Diode Forward
Voltage
Reverse Recovery Time VGS = 0 V, IS = 19 A,
Reverse Recovery Current ALL 5.2 75 A
VGS = 0 V,
IS = 9.5 A
dIS/dt = 100 A/µs
ALL 0.87 1.3 V
TJ = 125°C 0.79 1.2 V
ALL 78 110 ns
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case ALL 2
Thermal Resistance, Junction-to-Ambient ALL 62.5
°C/W
°C/W
NDP508.SAM
Page 4
Typical Electrical Characteristics
50
40
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5 6
V = 20V
GS
12
10
8.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
7.0
6.0
5.0
2
V = 6V
GS
1.8
1.6
1.4
1.2
DS(on)
R , NORMALIZED
1
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
0 10 20 30 40 50 60
7.0
8.0
10
I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
I = 9.5A
D
V = 10V
GS
2
1.5
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
2.5
T = 125°C
2
1.5
J
25°C
DS(on)
1
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40 50
-55°C
I , DRAIN CURRENT (A)
D
12
20
V = 10V
GS
Figure 3. On-Resistance Variation
with Temperature.
20
V = 10V
DS
15
10
5
D
I , DRAIN CURRENT (A)
0
2 3 4 5 6 7 8
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25
125
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
1.2
1.1
1
0.9
th
0.8
V , NORMALIZED
0.7
GATE-SOURCE THRESHOLD VOLTAGE (V)
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation
with Temperature.
V = V
DS GS
I = 250µA
D
NDP508.SAM
Page 5
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Pulse Width
Typical Electrical Characteristics (continued)
1.15
I = 250µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
0.9
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage
Variation with Temperature.
1600
1000
500
200
100
40
f = 1 MHz
V = 0V
GS
1 2 3 5 10 20 50
DS
C
C
C
iss
oss
rss
50
30
V = 0V
GS
10
5
1
0.1
S
I , REVERSE DRAIN CURRENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
T = 125°C
J
V , BODY DIODE FORWARD VOLTAGE (V)
SD
25°C
-55°C
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
I = 19A
D
15
10
5
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 10 20 30 40
Q , GATE CHARGE (nC)
g
V = 12V
DS
24
64
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
out
10%
t
on
10%
50%
r
t
90%
t
d(off)
V
DD
t
d(on)
V
IN
V
GS
R
GEN
G
R
L
D
V
OUT
DUT
Input, V
in
S
50%
90%
t
off
90%
10%
t
f
Inverted
Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.
NDP508.SAM
Page 6
Typical Electrical Characteristics (continued)
15
T = -55°C
12
9
6
3
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
0 4 8 12 16 20
I , DRAIN CURRENT (A)
D
J
25°C
125°C
V = 10V
DS
V = 10V
GS
t is adjusted to reach
p
t
p
the desired peak inductive
current, I .
L
t
p
I
L
BV
DSS
L
+
V
DD
-
V
DD
Figure 13. Transconductance Variation
with Drain Current and Temperature.
100
50
RDS(ON) Limit
20
10
5
V = 20V
2
D
I , DRAIN CURRENT (A)
1
0.5
GS
SINGLE PULSE
T = 25°C
C
1 2 3 5 10 20 30 50 100
V , DRAIN-SOURCE VOLTAGE (V))
GS
10ms
DC
10µs
100µs
1ms
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
Figure 15. Maximum Safe Operating Area.
1
0.1
0.05
0.02
D = 0.5
0.2
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
R = 2.0 °C/W
θJC
P(pk)
t
1
t
2
T - T = P * R (t)
J
Duty Cycle, D = t /t
0.5
0.3
0.2
0.1
0.05
0.01
0.03
0.02
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.1 1 10 100 1000
θJCθJC
θ
JCC
1 2
Figure 16. Transient Thermal Response Curve.
NDP508.SAM
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