Datasheet NDS9407 Datasheet (Fairchild)

May 2002

NDS9407

60V P-Channel PowerTrench



MOSFET

NDS9407

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been opt imized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings T

G

S

o

=25

C unless otherwise noted

A

Features

• –3.0 A, –60 V. R R

• Low gate charge

• Fast switching speed

• High performance trench te chnology for extremely

low R

• High power and current handling capability

DS(ON)

5 6 7 8

= 150 mΩ @ VGS = –10 V

DS(ON)

= 240 mΩ @ VGS = –4.5 V

DS(ON)

4 3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –60 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –3.0 A – Pulsed –12 PD

TJ, T

STG

Maximum Power Dissipation (Note 1a) 2.5 (Note 1b)

Operating and Storage Junction Temperature Range –55 t o +175

(Note 1c)

±20

1.2

1.0

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 50 (Note 1c)

(Note 1) 25

125

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2002 Fairchild Semiconductor Corporation

NDS9407 NDS9407 13’’ 12mm 2500 units

°C/W

NDS9407 Rev B1(W)

NDS9407

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

= –48 V, VGS = 0 V

V

DS

= –48 V, VGS = 0V, TJ = 55°C

V

DS

–60 V

–45

–1

–10

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –10 V, VDS = –5 V –12 A

D(on)

= VGS, ID = –250 µA

V

DS

= –250 µA, Referenced to 25°C

I

D

VGS = –10 V, ID = –3.0 A

= –4.5 V, ID = –1.6 A

V

GS

= –10 V, ID = –3.0 A, TJ =125°C

V

GS

gFS Forward Transconductance VDS = –15 V, ID = –3.0 A 8 S

–1 –1.6 –3 V

4

78 99

122

150 240 250

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 732 pF

iss

C

Output Capacitance 86 pF

oss

C

Reverse Transfer Capacitance

rss

= –30 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

38 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 8 16 ns

d(on)

tr Turn–On Rise Time 11 20 ns t

Turn–Off Delay Time 10 20 ns

d(off)

tf Turn–Off Fall Time trr Diode Reverse Recovery Time 24 nS Qrr Diode Reverse Recovery Charge Qg Total Gate Charge 16 22 nC Qgs Gate–Source Charge 2.2 nC Qgd Gate–Drain Charge

= –30 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

I

= –3.0 A,

F

= 100 A/µs

d

iF/dt

= –30 V, ID = –3.0 A,

V

DS

V

= –10 V

GS

GEN

= 6 Ω

10 20 ns

66 nC

3.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Drain–Source Diode Forward Voltage

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in2 pad of 2 oz copper

θCA

VGS = 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V

is determined by the user's board design.

b) 105°C/W when

mounted on a .04 in pad of 2 oz copper

2

c) 125°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

NDS9407 Rev B1(W)

E

Typical Characteristics

NDS9407

20

VGS = -10V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

0123456

-6.0V

-4.5V

-4.0V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-3.5V

-3.0V

2.4

2.2

VGS=-3.0V

2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0 4 8 121620

-3.5V

-4.0V

, DRAIN CURRENT (A)

-I

D

-4.5V

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8 ID = -3A

1.6

V

= -10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.3

0.25

0.2

0.15

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

TA = 25oC

0.05 246810

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-10V

ID = -1.5A

Figure 3. On-Resistance Variation with

Temperature.

10

VDS = -10V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

11.522.533.54

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS =0V

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDS9407 Rev B1(W)

)

T

)

Typical Characteristics

NDS9407

10

ID = -3A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0246810121416

Q

, GATE CHARGE (nC)

g

VDS = -20V

-30V

-40V

1200

1000

800

600

400

CAPACITANCE (pF)

200

0

0 102030405060

C

OSS

C

RSS

-V

C

ISS

, DRAIN TO SOUR CE V O LTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10

R

LIMIT

DS(ON)

1

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A

D

0.1

-I

0.01

= 125oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

DC

10s

1s

100ms

10ms

100µs

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE R

= 125°C/W

θ

JA

= 25°C

T

A

f = 1 MHz V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE TRANSIEN

THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

θJA

R

= 125oC/W

θJA

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

θJA

(t)

θJA

/ t

1

2

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

NDS9407 Rev B1(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOL T DenseTrench DOME EcoSPARK E2CMOS EnSigna

TM

FACT FACT Quiet Series

STAR*POWER is used under license

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC

2

I

C ISOPLANAR LittleFET MicroFET MicroPak

MICROWIRE OPTOLOGIC

â

OPTOPLANAR PACMAN POP Power247 PowerTrench

â

QFET QS QT Optoelectronics Quiet Series

SILENT SWITCHER SMART START SPM STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation

ââ

UHC UltraFET VCX

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H5