Datasheet MSA-1110 Datasheet (HP)

Page 1
Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-1110

Features

• High Dynamic Range
Cascadable 50␣ or 75␣ Gain Block
50␣ MHz to 1.6␣ GHz
• 17.5 dBm Typical P
0.5␣ GHz
1␣ dB
at
(MMIC) housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75␣ systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems.
• 12 dB Typical 50␣ Gain at
0.5␣ GHz
• 3.5␣ dB Typical Noise Figure at 0.5␣ GHz
• Hermetic Gold-ceramic Microstrip Package
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent performance, uniformity and

Description

The MSA-1110 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit
reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration

R
bias

100 mil Package

MAX
V
> 8 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9558E
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Page 2

MSA-1110 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 90 mA Power Dissipation RF Input Power +13 dBm Junction Temperature 200°C Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.4 mW/°C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ MENTS section “Thermal Resistance” for more information.
[2,3]
560 mW
> 124° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 135°C/W
[2,4]
:

Electrical Specifications

[1]
, T
= 25° C
A
Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Units Min. Typ. Max.
G G f
P
3 dB
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5 Gain Flatness f = 0.1 to 1.0 GHz dB ±0.7 ± 1.0
P
3 dB Bandwidth
[2]
GHz 1.6
Input VSWR f = 0.1 to 1.0 GHz 1.7:1
VSWR
Output VSWR f = 0.1 to 1.0 GHz 1.9:1
NF 50 Noise Figure f = 0.5 GHz dB 3.5 4.5 P IP t V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 16.0 17.5 Third Order Intercept Point f = 0.5 GHz dBm 30.0 Group Delay f = 0.5 GHz psec 160 Device Voltage V 4.5 5.5 6.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. Referenced from 50 MHz gain (GP).
2.
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Page 3
MSA-1110 Typical Scattering Parameters (Z
G
p
(dB)
0.1.02 .05 0.5 1.0 2.0 3.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs. Frequency, I
d
= 60 mA.
4020 60 80
I
d
(mA)
Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
14
12
16
4
6
8
12
10
14
G
p
(dB)
Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, I
d
= 60 mA.
3
4
5
11
13
12
16
17
18
–55 +25 +125
P
1 dB
(dBm)NF (dB)
Gp (dB)
TEMPERATURE (°C)
G
P
1.0 GHz,
P
1 dB
NF
20 468
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
20
40
60
100
80
I
d
(mA)
TC = +125°C T
C
= +25°C
T
C
= –55°C
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
3.5
3.0
4.0
4.5
5.0
NF (dB)
0.1 0.2 0.3 0.5 2.01.0 0.1 0.2 0.3 0.5 2.01.0
12
14
16
18
22
20
P
1 dB
(dBm)
Id = 75 mA
Id= 75 mA I
d
= 60 mA
I
d
= 40 mA
Id = 60 mA
Id = 40 mA
ZO = 50
Z
O
= 75
2.0 GHz
0.1 GHz
0.5 GHz
1.0 GHz
Freq.
S
11
S
21
= 50 , TA = 25° C, I
O
S
12
S
= 60 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
.0005 .83 –7 19.5 9.44 176 –31.9 .025 39 .84 –7 0.77 .005 .54 –50 16.8 6.92 158 –18.7 .116 34 .55 –50 0.60 .025 .15 –78 13.0 4.47 167 –16.6 .148 9 .15 –79 1.03 .050 .10 –64 12.6 4.26 171 –16.5 .149 5 .10 –67 1.08 .100 .08 –63 12.5 4.23 171 –16.5 .150 4 .08 –66 1.09 .200 .09 –74 12.4 4.17 166 –16.4 .152 4 .09 –78 1.09 .300 .11 –85 12.3 4.10 160 –16.2 .154 5 .12 –89 1.07 .400 .13 –94 12.3 4.10 154 –16.1 .157 6 .15 –98 1.05 .500 .16 –102 12.1 4.04 148 –15.9 .161 7 .18 –106 1.02 .600 .18 –108 12.0 3.98 143 –15.6 .165 8 .20 –113 1.00 .700 .21 –114 11.8 3.89 137 –15.4 .169 8 .23 –120 0.97 .800 .23 –120 11.6 3.80 131 –15.2 .173 8 .25 –126 0.95 .900 .25 –126 11.4 3.71 126 –15.0 .178 8 .28 –132 0.92
1.000 .27 –131 11.1 3.60 120 –14.8 .182 8 .30 –137 0.91
1.500 .36 –153 9.8 3.10 96 –13.8 .203 4 .37 –160 0.83
2.000 .42 –171 8.4 2.64 74 –13.3 .217 1 .40 –178 0.82
2.500 .47 177 7.2 2.29 59 –12.5 .236 –2 .41 172 0.80
3.000 .47 159 5.9 1.97 43 –13.2 .220 –10 .38 157 0.95
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
= 25° C, ZO = 50␣
A
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Page 4

100 mil Package Dimensions

.040
1.02 42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020 .508
1
.004 ± .002
.10 ± .05
.100
2.54
.495 ± .030
12.57 ± .76
GROUND
3
Notes: (unless otherwise specified)
1. Dimensions are
2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13
.030
.76
in
mm
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