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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1105
Features
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
• 3␣ dB Bandwidth:
50␣ MHz to 1.3␣ GHz
• 17.5 dBm Typical P
0.5␣ GHz
• 3.6␣ dB Typical Noise Figure
at 0.5␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
1␣ dB
at
The MSA-1105 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for high
dynamic range in either 50 or 75␣ Ω
systems by combining low noise
figure with high IP
. Typical
3
applications include narrow and
broadband linear amplifiers in
commercial and industrial systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
05 Plastic PackageDescription
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9557E
V
> 8 V
CC
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MSA-1105 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
[2,3]
550 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 124° C.
C
2. T
3. Derate at 8 mW/°C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 125°C/W
[2,4]
:
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Units Min. Typ. Max.
G
P
Power Gain (|S21|2) f = 0.05 GHz dB 12.7
f = 0.5 GHz dB 10.0 12.0
f = 1.0 GHz dB 10.5
∆G
f
3 dB
Gain Flatness f = 0.1 to 1.0 GHz dB ±1.0
P
3 dB Bandwidth
[2]
GHz 1.3
Input VSWR f = 0.1 to 1.0 GHz 1.5:1
VSWR
Output VSWR f = 0.1 to 1.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.6
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5
Third Order Intercept Point f = 0.5 GHz dBm 30.0
Group Delay f = 0.5 GHz psec 200
Device Voltage V 4.4 5.5 6.6
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
Referenced from 50 MHz gain (GP).
2.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-1105-TR1 500 7" Reel
MSA-1105-STR 10 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
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MSA-1105 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 60 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
.0005 .80 –17 19.0 8.94 171 –26.0 .050 51 .81 –16 0.53
.005 .26 –62 13.9 4.98 163 –16.8 .144 15 .26 –64 0.93
.025 .07 –48 12.8 4.36 174 –16.4 .151 4 .08 –52 1.08
.050 .06 –38 12.7 4.33 174 –16.3 .153 2 .06 –48 1.08
.100 .05 –41 12.7 4.31 170 –16.4 .152 3 .06 –52 1.09
.200 .06 –58 12.6 4.26 162 –16.2 .155 5 .08 –73 1.08
.300 .07 –74 12.4 4.19 154 –16.1 .157 7 .10 –91 1.07
.400 .09 –91 12.2 4.10 146 –15.8 .163 8 .12 –105 1.06
.500 .10 –105 12.0 4.00 138 –15.6 .166 8 .14 –116 1.05
.600 .11 –116 11.8 3.88 131 –15.4 .171 10 .17 –126 1.04
.700 .13 –128 11.5 3.76 123 –15.0 .178 11 .18 –135 1.03
.800 .15 –136 11.2 3.63 116 –14.7 .184 11 .21 –144 1.01
.900 .16 –145 10.9 3.49 109 –15.5 .188 11 .22 –151 1.01
1.000 .18 –152 10.5 3.37 102 –14.1 .197 11 .24 –159 1.00
1.500 .28 174 8.8 2.75 72 –13.2 .219 7 .31 170 1.00
2.000 .38 150 7.1 2.28 48 –12.1 .248 0 .34 151 0.99
2.500 .46 133 5.6 1.90 28 –11.9 .254 –4 .38 134 1.02
3.000 .53 118 4.2 1.62 11 –11.6 .262 –8 .40 122 1.04
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
16
14
12
10
(dB)
8
p
G
6
4
2
0
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
22
Id = 70 mA
20
Id = 60 mA
18
(dBm)
1 dB
16
P
0.1.02 .05 0.5 1.0 2.0 3.0
FREQUENCY (GHz)
Z
O
ZO = 50 Ω
= 75 Ω
= 25° C, ZO = 50 Ω
A
100
TC = +85°C
T
= +25°C
C
80
T
= –25°C
C
60
(mA)
d
I
40
20
0
20 468
Figure 2. Device Current vs. Voltage.
5.5
Id= 70 mA
I
= 60 mA
d
5.0
I
= 40 mA
d
4.5
NF (dB)
4.0
V
(V)
d
18
(dBm)NF (dB)
17
1 dB
16
P
5
4
3
–25 +25 +85
TEMPERATURE (°C)
P
1 dB
13
12
11
G
P
NF
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, I
= 60 mA.
d
Gp (dB)
14
Id = 40 mA
12
0.1 0.2 0.3 0.5 2.01.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
3.5
3.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
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05 Plastic Package Dimensions
GROUND
0.030
0.89
RF INPUT
1
0.030 ± 0.010
0.76 ± 0.25
(4 PLCS)
0.008 ± 0.002
0.20 ± 0.05
GROUND
0.135 ± 0.015
3.42 ± 0.25
(4 PLCS)
0.020
0.51
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
in
mm
A
0.145
3.68
4
2
0.030
DIA
0.76
RF OUTPUT
AND DC BIAS
3
0.030
0.76
0.050
1.27
0.0005 ± 0.010
(0.013 ± 0.25)
0.100 ± 0.010
2.54 ± 0.25
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