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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0286
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface
Mount Semiconductors”.
[1]
Description
The MSA-0286 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
V
86 Plastic Package
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
,
MAX
> 7 V
CC
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9564E
6-286
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MSA-0286 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 105°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 25 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.4:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
Third Order Intercept Point f = 1.0 GHz dBm 17.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
[2,4]
:
> 116° C.
C
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0286-TR1 1000 7" Reel
MSA-0286-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-287
Page 3
MSA-0286 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 25 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .10 171 12.5 4.22 175 –18.5 .119 1 .16 –5
0.2 .10 161 12.5 4.20 170 –18.3 .121 3 .16 –11
0.4 .10 144 12.4 4.16 159 –18.2 .122 6 .15 –24
0.6 .09 129 12.2 4.09 149 –18.0 .126 6 .15 –36
0.8 .08 119 12.1 4.01 139 –18.0 .127 9 .14 –48
1.0 .08 108 11.9 3.91 129 –17.4 .135 8 .14 –62
1.5 .06 111 11.3 3.67 106 –16.5 .149 12 .11 –99
2.0 .08 141 10.5 3.35 84 –15.7 .164 11 .11 –141
2.5 .14 150 9.6 3.01 67 –14.8 .182 9 .12 –176
3.0 .21 142 8.6 2.68 48 –14.3 .194 5 .13 155
3.5 .29 132 7.5 2.37 30 –14.0 .200 1 .14 140
4.0 .36 121 6.4 2.09 15 –13.5 .211 –3 .16 134
5.0 .50 101 4.1 1.61 –12 –13.3 .216 –12 .20 132
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
= 25° C
A
(unless otherwise noted)
14
12
10
Id = 18 mA
8
Id = 25 mA
(dB)
Id = 40 mA
p
G
6
4
2
Gain Flat to DC
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency.
12
Id = 40 mA
10
8
(dBm)
6
1 dB
P
4
Id = 25 mA
2
Id = 18 mA
0
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
40
TC = +85°C
TC = +25°C
30
TC = –25°C
20
(mA)
d
I
10
0
0 234561
Figure 2. Device Current vs. Voltage.
7.5
7.0
6.5
NF (dB)
6.0
5.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
(V)
V
d
Id = 18 mA
Id = 25 mA
Id = 40 mA
13
(dB)
12
p
G
11
8
7
6
5
(dBm)
4
1 dB
P
3
–25 +250 +85+55
TEMPERATURE (°C)
G
P
NF
P
1 dB
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=25mA.
8
7
6
NF (dB)
5
4
3
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Page 4
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
RF INPUT
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
GROUND
45°
1
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
A02
5° TYP.
2.16 ± 0.13
4
RF OUTPUT
AND DC BIAS
3
2.34 ± 0.38
(0.092 ± 0.015)
2
(0.006 ± 0.002)
8° MAX
0° MIN
0.203 ± 0.051
C
L
6-289
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