Datasheet MSA-0285 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-0285

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 2.6 GHz

• 12.0 dB Typical Gain at

designed for use as a general

purpose 50 Ω gain block. Typical

applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Low Cost Plastic Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-

Description

The MSA-0285 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is

zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

Typical Biasing Configuration

R

bias

85 Plastic Package

,

MAX

V

> 7 V

CC

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

C

block

= 5 V

V

d

5965-9563E

6-282

MSA-0285 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation

[2,3]

325 mW

RF Input Power +13 dBm

Junction Temperature 150°C
Storage Temperature –65 to 150° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 10.5 mW/° C for T

4. See MEASUREMENTS section “Thermal Resistance” for more information.

CASE

= 25°C.

> 119°C.

C

[1]

Thermal Resistance

θjc = 95°C/W

[2,4]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 25 mA, Z

G

P

Power Gain (|S21|2) f = 0.1 GHz dB 12.5

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

f = 1.0 GHz 10.0 12.0

∆G

P

f

3 dB

VSWR

Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6

3 dB Bandwidth GHz 2.6

Input VSWR f = 0.1 to 3.0 GHz 1.3:1

Output VSWR f = 0.1 to 3.0 GHz 1.4:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5

Third Order Intercept Point f = 1.0 GHz dBm 17.0

Group Delay f = 1.0 GHz psec 125

Device Voltage V 4.0 5.0 6.0

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.

6-283

MSA-0285 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

= 25 mA)

d

S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .10 174 12.6 4.25 175 –18.6 .118 2 .14 –7

0.2 .10 168 12.5 4.22 171 –18.5 .119 3 .13 –12

0.4 .10 157 12.4 4.17 161 –18.3 .122 6 .14 –26

0.6 .09 143 12.3 4.10 153 –18.3 .121 7 .14 –38

0.8 .08 132 12.1 4.03 144 –18.0 .126 11 .14 –48

1.0 .08 122 11.9 3.95 135 –17.5 .133 12 .14 –60

1.5 .04 95 11.4 3.70 115 –17.0 .142 16 .13 –85

2.0 .02 117 10.6 3.40 95 –16.0 .158 17 .12 –110

2.5 .05 –173 9.9 3.11 82 –15.0 .177 20 .12 –128

3.0 .12 –175 8.9 2.78 65 –14.7 .185 19 .11 –148

3.5 .16 179 7.9 2.49 49 –14.0 .199 14 .10 –145

4.0 .21 169 6.9 2.22 35 –13.7 .207 11 .10 –134

5.0 .28 139 5.0 1.77 9 –13.0 .224 4 .12 –118

6.0 .41 100 3.0 1.42 –16 –12.9 .226 –5 .09 –154

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

14

12

Gain Flat to DC

10

8

(dB)

p

G

6

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.

13
12

(dB)

p

G

11

8

7

6

5

(dBm)

1 dB

4

P

3

–25 0 +25 +55 +85

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=25mA.

G

P

NF

P

1 dB

= 25° C

A

8

7

6

5

NF (dB)

4
3

25

TC = +85°C
TC = +25°C

20

TC = –25°C

15

(mA)

d

I

10

5

0

0 234 561

Vd (V)

Figure 2. Device Current vs. Voltage.

12

Id = 40 mA

10

8

(dBm)

6

1 dB

P

Id = 25 mA

4

2

Id = 18 mA

0

0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

14

12

10

(dB)

p

G

8

0.1 GHz

Id (mA)

0.5 GHz

1.0 GHz

2.0 GHz

6

4

15 25 30 35 4020

Figure 3. Power Gain vs. Current.

7.5

7.0

6.5

NF (dB)

6.0

5.5

Id = 18 mA
Id = 25 mA
Id = 40 mA

FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-284

85 Plastic Package Dimensions

.020

.51

4

A02

.085

2.15

5° TYP.

.286 ± .030

7.36 ± .76

0.143 ± 0.015

3.63 ± 0.38

3

RF OUTPUT
AND BIAS

Notes:
(unless otherwise specified)

1. Dimensions are

2

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.006 ± .002

.15 ± .05

45°

1

.060 ± .010

1.52 ± .25

.07

0.43

GROUND

RF INPUT

GROUND

in

mm

6-285