Page 1
'99
new!
MICROWAVE CORPORATION
HMC223MS8
GaAS MMIC MSOP8 T/R SWITCH 4.5 - 6 GHz
7
FEBRUARY 2001
Features
INDUSTRY FIRST LOW COST 4.5-6 GHz SWITCH
ULTRA SMALL PACKAGE: MSOP8
HIGH INPUT P1dB: +33 dBm
SINGLE POSITIVE SUPPLY: +3 TO +8V
V01.0300
General Description
The HMC223MS8 is a low-cost SPDT switch
in an 8-lead MSOP package for use in
transmit-receive applications. The device
can control signals from 4.5 to 6 GHz and is
especially suited for 5.2 GHz UNII and 5.8
GHz ISM applications with only 1.2 dB loss.
The design provides exceptional power
handling performance; input P1dB =
+33dBm at 5 Volt bias. RF1 or RF2 is a
reflective short when "Off". On-chip circuitry allows single positive supply operation
at very low DC current with control inputs
compatible with CMOS and most TTL logic
families. No DC blocking capacitors are
required on RF I/O ports. HMC223MS8 is
especially suited for PCMCIA wireless LAN
applications.
Guaranteed Performance, Vdd = +5 Vdc, 50 Ohm System, -40 to +85 deg C
SWITCHES
Insertion Loss
SPDT
Isolation
Return Loss
SMT
Input Power for 1dB
Compression
Input Third Order Intercept 0/3V Control
Switching Characteristics tRISE, tFALL (10/90% RF)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 88
Parameter Frequency Min. Typ. Max. Units
RF Common
RF1 &RF2
0/3V Control
0/5V Control
0/5V Control
tON,tOFF (50% CTL to 10/90%
RF
4.5 -6.0GHz
5.1 -5.4GHz
5.4 -5.9GHz
4.5 -6.0GHz
5.1 -5.4GHz
5.4 -5.9GHz
4.5 -6.0GHz
5.1 -5.9GHz
4.5 -6.0GHz
5.1 -5.9GHz
4.5 -6.0GHz
4.5 -6.0GHz2729
4.5 -6.0GHz
4.5 -6.0GHz3032
4.5 - 6.0 GHz 10
15
22
16
10
11
10
12
1.2
1.2
1.3
25
26
20
13
15
13
16
31
33
34
36
25
1.7
1.6
1.7
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
nS
nS
Page 2
MICROWAVE CORPORATION
HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz
new!
HMC223MS8
'99
V01.0300
Insertion Loss
0
-0.5
-1
-1.5
-2
-2.5
-3
INSERTION LOSS (dB)
-3.5
-4
34567
FREQUENCY (GHz)
Return Loss
FEBRUARY 2001
Isolation
0
-10
-20
ISOLATION (dB)
-30
-40
34567
FREQUENCY (GHz)
7
0
-5
-10
-15
-20
RETURN LOSS (dB)
-25
S11 RFC
-30
34567
FREQUENCY (GHz)
S22
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 89
SWITCHES
SPDT
SMT
Page 3
'99
new!
MICROWAVE CORPORATION
HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz
FEBRUARY 2001
Functional Diagram
GND
RF2 GND
A
B
Absolute Maximum Ratings
)ddV(egnaRegatloVsaiBcdV21+ot2.0-
erutarepmeTegarotSCged051+ot56-
erutarepmeTgnitarepOCged58+ot04-
RF
)B&A(egnaRegatloVlortnoCcdVddV+ot2.0-
RF1
Vdd
HMC223MS8
V01.0300
T ruth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc
Bias
Control
Bias Con trol Input *
Vdd
(Vdc)A(Vdc)B(Vdc)
30010-5-5OFFOFF
30Vdd10-10 0 ON OFF
3Vdd 0 10 0 -10 OFF ON
50045-22-23OFFOFF
50Vdd45 -5-40ON OFF
5Vdd 0 45
Caution: Do not operate in 1dB compression at power levels
above +33 dBm and do not 'hot switch' power levels greater
than +23dBm (Vdd = +5Vdc).
DC blocks are not required at ports RFC, RF1 and RF2.
Current
Ivdd
(µA)Ia(µA)Ib(µA)
Current
-40
Control
Current
Signal Path State
RF to
RF1
-5 OFF ON
RF to RF2
7
Outline
SWITCHES
SPDT
SMT
0.116/0.120
PIN 1
0.038/0.042
(0.96/1.07)
0.0256 TYP
RF1
0.116/0.120
(2.95/3.05)
0.188/0.196
(4.78/4.98)(2.95/3.05)
0.032/0.036
(0.81/0.91)
0.012 TYP
(0.30)
0-5 DEG
GND
RF2
HMC
223
A B RF +Vdd
(0.65)
1) MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC, SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY
2 . PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
XXXX
YYWW
0.021 MIN TYP
(0.53)
LOT NUMBER
DATE CODE
YY= YEAR
WW= WEEK
PIN 1 (REF)
0.005/0.007
(0.13/0.18)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 90
Page 4
MICROWAVE CORPORATION
HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz
new!
HMC223MS8
'99
V01.0300
FEBRUARY 2001
Typical Application Circuit
RF1RF2
GND
GND
A
+V
R1
CMOS CMOSCTL
Notes:
1. Control inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and
to pin 4 of the RF switch.
2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface.
3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF
power capability) at bias voltages down to +3V.
4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed
close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances.
5. DC Blocking capacitors are not required for each RF port.
6. Evaluation PCB available.
B
R2
RF
Vdd
+V
R3
7
SWITCHES
See Page 8 - 4 for Layout Guidelines Application Note.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
7 - 91
SPDT
SMT
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