Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6447
FSS107
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : S107
D
D
SG
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS107]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %184–A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A8–=
2)no(IDV,A5–=
I
D
V
V
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1–=4.0–3.1–V
D
A8–=5152S
D
V4–=8132mΩ
SG
V5.2–=6273mΩ
SG
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
02–V
01±V
8–A
0.2W
˚C
˚C
tinU
81000TS (KOTO) TA-2771 No.6447-1/4
Page 2
FSS107
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A8–=
S
Switching Time Test Circuit
VDD= --10V
V
0V
--4V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --8A
RL=1.25Ω
V
OUT
zHM1=f,V01–=0042Fp
zHM1=f,V01–=0021Fp
zHM1=f,V01–=006Fp
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS053sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS042sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A8–=09Cn
D
A8–=8Cn
D
A8–=61Cn
D
tinU
--8
--7
--6
–A
--5
D
--4
P.G
--4.0V
--6.0V
--2.5V
--3.0V
50Ω
--2.0V
I
D
-- V
DS
FSS107
S
--8.0V
--3
Drain Current, I
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8
Drain-to-Source Voltage, VDS–V
70
60
RDS(on) -- V
GS
–mΩ
50
(on)
ID= --5A
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--8A
Gate-to-Source Voltage, VGS–V
I
-- V
--10
VDS= --10V
--9
--8
--7
–A
D
--6
--5
V
= --1.5V
GS
IT01720
Ta=25°C
IT01722 IT01723
--4
--3
Drain Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --2.0--1.8
Gate-to-Source Voltage, VGS–V
50
40
–mΩ
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
Ambient Temperature, Ta – ˚C
D
RDS(on) -- Ta
= --5A, V
I
D
I
D
= --8A, V
GS
GS
GS
Ta=75
= --2.5V
= --4.0V
C
°
°C
--25
C
°
25
IT01721
No.6447-2/4
Page 3
100
fs|–S
y
Forward Transfer Admittance, |
10000
yfs -- I
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
23 57 23 57 23 57
--0.01
Ta= --25
°
75
--0.1 --1.0 --10
Drain Current, ID–A
Ciss, Coss, Crss -- V
7
5
3
2
D
C
°
25°C
C
Ciss
Coss
1000
7
5
Ciss, Coss, Crss – pF
3
2
100
0 --2 --4 --6 --8 --10 --12 --14 --16 --18
Crss
Drain-to-Source Voltage, VDS–V
1000
SW Time -- I
7
5
D
td(off)
3
2
100
7
5
3
Switching Time, SW Time – ns
2
10
2.4
--0.1
23 57 23 57
t
f
t
r
td(on)
Drain Current, ID–A
--1.0 --10
P
-- Ta
D
VDS= --10V
IT01724
DS
f=1MHz
IT01726
VDD= --10V
VGS= --4V
IT01728
FSS107
--20
I
-- V
F
C
°
Ta=75
SD
25°C
--10
7
5
3
2
–A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0
Diode Forward Voltage, VSD–V
--10
VDS= --10V
--9
ID= --8A
V
--8
--7
GS –
--6
--5
--4
--3
--2
Gate-to-Source Voltage, V
--1
0
010203040 8050 60 70
VGS -- Qg
Total Gate Charge, Qg – nC
--100
IDP= --48V
7
5
3
2
ID= --8A
--10
7
5
–A
3
D
2
,I
--1.0
7
5
3
Operation in this area
2
Drain Current
is limited by RDS(on).
--0.1
7
5
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board (1000mm2×0.8mm)
--0.01
23 57 2 3 57 7
--0.01
--0.1
Drain-to-Source Voltage, VDS–V
A S O
DC operation
--1.0 --10
VGS=0
C
°
-25
IT01725
IT01727
100µs
1ms
10ms
100ms
23 5 723 5
IT01729
--1.4--1.2
90
--100
2.0
–W
D
1.6
1.2
0.8
0.4
M
ounted on a ceram
ic board (1000m
m
2
×0.8m
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
m
)
IT01730
No.6447-3/4
Page 4
FSS107
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.6447-4/4
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