Datasheet FSS139 Datasheet (SANYO)

Download

Page 1

Ordering number : ENN7019

FSS139

P-Channel Silicon MOSFET

FSS139

Load Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2116

[FSS139]

4.4

0.3

6.0

1 : Source 2 : Source

Specifications

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

3 : Source

0.2

4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain

SANYO : SOP8

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

PW≤10µs, duty cycle≤1% --48 A Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W

--20 V

±10 V

--4 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance

(BR)DSSID

DSS GSS

yfs



=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --1 µA VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--4A 6.3 9 S

Marking : S139 Contin ued on ne xt page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73001 TS IM T A-2723

No.7019-1/4

Page 2

FSS139

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF

Output Capacitance Coss VDS=--10V, f=1MHz 190 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 52 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 23 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2.3 nC Diode Forward Voltage V

RDS(on) 1 ID=--4A, VGS=--4V 60 78 mΩ RDS(on) 2 ID=--2A, VGS=--2.5V 78 110 mΩ

See specified Test Circuit 200 ns

See specified Test Circuit 78 ns

IS=--4A, VGS=0 --0.89 --1.5 V

Ratings

min typ max

Unit

Switching Time Test Circuit

--4V V

PW=10µs D.C.≤1%

P.G

--6

--5

--4

-- A D

--3

--2

Drain Current, I

--1

160

140

--2.5V

--3.0V

--4.0V

--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0

Drain-to-Source V oltage, VDS -- V

--2.0V

RDS(on) -- V

-- V

50Ω

VDD= --10V

VGS= --1.5V

--0.7

ID= --4A RL=2.5Ω

Ta=25°C

FSS139

IT02298

OUT

--6

VDS=10V

--5

--4

-- A D

--3

--2

Drain Current, I

--1

--0.2 --0.6 --1.6--1.0--0.8

160

140

-- V

25°C

--25°C

Ta=75°C

--0.4 --1.4--1.2 --2.0--1.8

Gate-to-Source V oltage, VGS -- V

IT02299

RDS(on) -- Ta

120

ID= --2A

(on) -- mΩ

100

Static Drain-to-Source

On-State Resistance, R

--4A

--2 --40 --6 --10--8

Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C

IT02300 IT02301

120

(on) -- mΩ

100

Static Drain-to-Source

On-State Resistance, R

--40 --20--60

= --2A, V

= --4A, V

= --2.5V

= --4.0V

160120 14010060 804020

No.7019-2/4

Page 3

7 5

3 2

1.0 7 5

3 2

yfs -- I

VDS=10V

25°C

75°C

Ta= --25°C

Forward Transfer Admittance, yfs -- S

0.1

--1.0--0.1--0.01

Drain Current, ID -- A

1000

7 5

Ciss, Coss, Crss -- pF

100

7 5

0 --4 --6--2 --10 --12--8 --14 --16 --20

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source V oltage, V

VDD= --10V VGS= --4V

3 2

100

7 5

3 2

Switching Time, SW Time -- ns

--0.1 --1.0

2.5

SW Time -- I

td(off)

(on)

Drain Current, I

-- Ta

-- A

-- V

23 5723 57

IT02302

f=1MHz

--18

IT02304

IT02306

FSS139

--1023 57 23 57 23 57

-- V

--10 7

VGS=0

5 3

--1.0 7 5

-- A F

3 2

--0.1 7

5 3

--0.01

Forward Current, I

7 5

3 2

--0.001

Ta=75°C

--0.3 --0.6 --1.0--0.4

25°C

--0.5 --0.7 --0.8 --0.9--0.2

--25°C

Diode Forward V oltage, VSD -- V

--10

--9

--8

-- V

--7

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1 0

VDS= --10V ID= --4A

VGS -- Qg

62418 20 22141021216840

Total Gate Charge, Qg -- nC

--100 7

IDP= --48A

5 3 2

--10 7

ID= --4A

-- A

--1.0 7 5

3 2

Drain Current, I

--0.1 7 5

3 2

--0.01

--0.01 --0.1 --1.0 --10

Operation in this area is limited by RDS(on).

Ta=25°C Single pulse Mounted on a ceramic board(1200mm

Drain-to-Source V oltage, V

A S O

DC operation

23 5723 5723 57 23

<10µs

100µs

10ms

100ms

✕0.8mm)

-- V

IT02303

IT02305

1ms

IT03272

-- W

2.0

1.8

1.5

1.0

0.5

Mounted on a ceramic board(1200mm

✕0.8mm)

Allowable Power Dissipation, P

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03273

No.7019-3/4

Page 4

FSS139

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice.

No.7019-4/4