Datasheet FSS250 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6269

FSS250

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

· Ultrahigh-speed switching.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S250

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS250]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A7=701S

D

V01=5233mΩ

SG

V5.4=8345mΩ

SG

zHM1=f,V01=035Fp
zHM1=f,V01=071Fp
zHM1=f,V01=09Fp

SSD
SSG

)ffo(SG

1IDV,A7=

)no(SD

2IDV,A4=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

sgnitaR

Continued on next page.

03V
02±V
7A

8.1W

˚C
˚C

tinU

21400TS (KOTO) TA-2167 No.6269-1/4

FSS250

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A7=

0=28.02.1V

SG

Switching Time Test Circuit

VDD=15V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=7A

RL=2.1Ω

D

V

OUT

tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS031sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS06sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A7=01Cn
A7=5.1Cn
A7=0.1Cn

tinU

P.G

10

9

8

8.0V

7

–A

6.0V

6

D

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60
55

50
45

ID=4A

–mΩ

40
35

DS(on)

30
25
20
15
10

5

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

50Ω

I

-- V

D

10.0V

4.5V

3.5V

3.0V

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

7A

Gate-to-Source Voltage, V

S

DS

FSS250

GS

GS

VGS=2.5V

–V

IT00546

Ta=25°C

IT00548

I

-- V

10

9

8

7

–A

D

6

5
4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

60

50

–mΩ

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

Gate-to-Source Voltage, VGS–V

D

RDS(on) -- Ta

D

I

=4A, V

=7A, V

I

D

GS

GS

=4.5V

GS

Ta=--25°C

25°C

=10.0V

75°C

Ambient Temperature, Ta – ˚C

VDS=10V

IT00547

IT00549

No.6269-2/4

y

|

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.1 1.0

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss – pF

3
2

10

0 5 10 15 20 25

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

0.1

2.0

1.8

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

23 57

–W

D

1.5

fs |

Drain Current, ID–A

SW Time -- I

td(off)

t

f

Drain Current, ID–A

P

Mounted on a ceramic board (1000mm

-

Ta=--25°C

25°C

75327532

1.0

-- Ta

D

I

D

VDS=10V

75°C

IT00550

DS

f=1MHz

Ciss

Coss

Crss

IT00552

D

VDD=15V
VGS=10V

t

r

td(on)

23 57

IT00554

FSS250

10

30

10

I

-- V

F

10

7
5

3
2

1.0
7

–A

5

F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

°C

Ta=75

25°C

--25°C

Diode Forward Voltage, VSD–V

10

VDS=10V

9

ID=7A

V

8

GS –

7

6
5

4

3

2

Gate-to-Source Voltage, V

1
0

012345678910

100

7
5

3

I

DP

2

10

7
5

–A

3

D

2

,I

1.0
7
5

Operation in this

3
2

area is limited by RDS(on).

Drain Current

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57 23 57 7

0.01

Drain-to-Source Voltage, VDS–V

VGS -- Qg

Total Gate Charge, Qg – nC

I

D

0.1

SD

A S O

<100µs

100ms

DC opration

23 5 723 5

1.0 10

10ms

1ms

VGS=0

IT00551

IT00553

100µs

1.2

100

IT00555

1.0

0.5

2

×0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT00556

No.6269-3/4

FSS250

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.

PS No.6269-4/4