Datasheet FSS232 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6359

FSS232

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S232

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS232]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A9=5.0151S

D

V01=5102mΩ

SG

V4=3233mΩ

SG

zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp

SSD
SSG

)ffo(SG

1IDV,A9=

)no(SD

2IDV,A4=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source

0.2

3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8

sgnitaR

Continued on next page.

03V
02±V
9A

8.1W

˚C
˚C

tinU

30300TS (KOTO) TA-1939 No.6359-1/4

FSS232

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A9=

0=38.02.1V

SG

Switching Time Test Circuit

VDD=15V

tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS042sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS59sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A9=04Cn
A9=5Cn
A9=7Cn

tinU

ID=9A

RL=1.67Ω

D

S

DS

15

12

V

10V

0V

PW=10µs
D.C.≤1%

P.G

6.0V

IN

10.0V

V

IN

G

50Ω

I

-- V

D

3.0V

3.5V

4.0V

–A

9

D

6

Drain Current, I

3

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS–V

60

50

RDS(on) -- V

GS

–mΩ

40

DS(on)

30

ID=4A

20

10

Static Drain-to-Source

On-State Resistance, R

9A

V

OUT

FSS232

VGS=2.5V

IT00755

Ta=25°C

I

-- V

16

14

12

–A

10

D

8

6

Drain Current, I

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

D

GS

Ta=75°C

Gate-to-Source Voltage, VGS–V

40

35

–mΩ

30

25

DS(on)

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

RDS(on) -- Ta

=4A

D

=4V, I

V

GS

=10V, I

V

GS

D

=9A

VDS=10V

25°C

--25°C

IT00756

0

02468101214161820

Gate-to-Source Voltage, V

GS

–V

IT00757

0

--50 --25 0 25 50 75 100 125 150

Ambient Temperature, Ta – ˚C

IT00758

No.6359-2/4

100

7
5

3
2

fs | – S

y

10

7
5

3
2

1.0
7
5

3
2

0.1
7

5
3

2

Forward Transfer Admittance, |

0.01

0.001

10000

7
5

3
2

1000

7
5

Ciss,Coss,Crss – pF

3
2

100

0 5 10 15 20 25

Ta=--25

75°C

23 57

Ciss, Coss, Crss -- V

yfs -- I

°C

25°C

23 57 2 3 57 2 3 57 23 57

0.10.01 1.0 10 100

Drain Current, ID–A

D

Drain-to-Source Voltage, VDS–V

1000

Switching Time, SW Time – ns

100

10

1.0

7
5

3
2

7
5

3
2

7
5

3
2

0.1

23 57

SW Time -- I

td(off)

t

f

t

r

td(on)

1.0 10 100

Drain Current, ID–A

P

-- Ta

2.0

1.8

–W

D

1.5

Mounted on a ceramic board (1000mm

D

D

DS

Ciss

Coss

Crss

VDD=15V
VGS=10V

23 5723 57

VDS=10V

IT00759

f=1MHz

IT00761

IT00763

FSS232

30

I

-- V

F

100

7
5

3
2

10

7
5

3

–A

2

F

1.0
7
5

3
2

0.1
7
5

3
2

Forward Current, I

0.01
7
5
3
2

0.001

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

°C

Ta=75

25°C

--25°C

SD

Diode Forward Voltage, VSD–V

V

-- Qg

10

VDS=10V
ID=9A

9

V

8

–

GS

7
6

5
4

3
2

Gate-to-Source Voltage, V

1
0

010203025 35 40515

GS

Total Gate Charge, Qg – nC

100

7

IDP=52A

5
3

2

ID=9A

10

7
5

–A

3

D

2

1.0
7

5

Operation in this

3
2

area is limited by RDS(on).

Drain Current, I

0.1
7

5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57 23 57 7

0.01

0.1

A S O

100ms

DC operation

235 723 5

1.0 10

10ms

Drain-to-Source Voltage, VDS–V

<10µs

1ms

VGS=0

1.2

IT00760

IT00762

100µs

100

IT00764

1.0

0.5

2

×0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT00765

No.6359-3/4

FSS232

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6359-4/4