Datasheet FSQ510, FSQ510MX Specification

Page 1
FSQ510, FSQ510H, and FSQ510M
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
January 2009
Green Mode Fairchild Power Switch (FPS™)
for Valley Switching Converter – Low EMI and High Efficiency
Uses an LDMOS Integrated Power Switch
Optimized for Valley Switching Converter (VSC) Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
High Efficiency through Minimum Drain Voltage
Switching
Extended Valley Switching for Wide Load Ranges Small Frequency Variation for Wide Load Ranges Advanced Burst-Mode Operation for Low Standby
Power Consumption
Pulse-by-Pulse Current Limit Protection Functions: Overload Protection (OLP),
Internal Thermal Shutdown (TSD) with Hysteresis
Under-Voltage Lockout (UVLO) with Hysteresis Internal Startup Circuit Internal High-Voltage SenseFET: 700V Built-in Soft-Start: 5ms
Applications
Auxiliary Power Supplies for LCD TV, LCD Monitor,
Personal Computer, and White Goods
Description
A Valley Switching Converter (VSC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510 (H or M) is an integrated valley switching pulse width modulation (VS­PWM) controller and SenseFET specifically designed for offline switch-mode power supplies (SMPS) for valley switching with minimal external components. The VS-PWM controller includes an integrated oscillator, under-voltage lockout (UVLO), leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller solutions, the FSQ510 (H or M) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a platform for cost-effective designs of a valley switching flyback converters.
Ordering Information
Operating
Part
Number
FSQ510 7-DIP
FSQ510H 8-DIP
FSQ510M 7-MLSOP
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Notes:
1. The junction temperature can limit the maximum output power.
2. 230V
3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a non-
4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at 50°C ambient temperature.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0
Package
or 100/115VAC with voltage doubler.
AC
ventilated, enclosed adapter housing, measured at 50°C ambient temperature.
Eco
Status
RoHS
Junction
Temperature
-40 to +130°C
Current
Limit
320mA
R
DS(ON)
(MAX)
32Ω
Adapter
Output Power Table
230VAC ± 15%
(3)
5.5W 9W 4W 6W
(2)
85-265VAC
Open
Frame
Adapter
(4)
(1)
(3)
Open
Frame
Replaces
Devices
(4)
FSD210B
FSD210DH
FSD210BM
Page 2
Application Circuit
AC
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Vo
IN
V
str
D
VS
Sync
-PWM
V
fb
V
cc
GND
Figure 1. Typical Application Circuit
Internal Block Diagram
V
REFVREF
I
3
V
fb
(2)
0.85V / 0.75V
4.7V
delay
OLP
FB
I
6R
0.7V / 0.1V
R
TSD
Sync
4 (3)
200ns
delay
OSC
A/R
V
CC
5 (7)
UVLO V
8.7V / 6.7V
S
Q
R
S
Q
R
360ns
LEB
5ms
S/S
REF
V
str
8 (1)
R
(0.4V)
D
7 (8)
sense
n(m):n stands for the pin number of 7-DIP and 7-MLSOP
m stands for the pin number of 8-DIP
1,2
(4,5,6) GND
Figure 2. Internal Block Diagram
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 2
Page 3
Pin Assignments
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
V
str
V
fb
FSQ510H
Sync
GND
Figure 3. Package Diagrams for FSQ510(M) and FSQ510H
Pin Definitions
7-Pin 8-Pin Name Description
1, 2
3 2 V
4 3 Sync
5 7 V
7 8 D High-voltage power SenseFET drain connection.
8 1 V
4, 5, 6 GND This pin is the control ground and the SenseFET source.
This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this
fb
pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 4.7V, the overload protection triggers, which shuts down the FPS.
This pin is internally connected to the sync-detect comparator for valley switching. In normal valley-switching operation, the threshold of the sync comparator is 0.7V/0.1V.
CC
This pin is the positive supply input. This pin provides internal operating current for both startup and steady-state operation.
This pin is connected directly, or through a resistor, to the high­voltage DC link. At startup, the internal high-voltage current source
str
supplies internal bias and charges the external capacitor connected to the V
pin. Once VCC reaches 8.7V, the internal current source is
CC
disabled.
D
V
cc
GND
GND
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 3
Page 4
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
V
V
STR
V
Drain Pin Voltage 700 V
DS
V
Supply Voltage 20 V
CC
V
FB
V
Sync Pin Voltage -0.3 6.5 V
Sync
P
Total Power Dissipation
D
T
J
T
Storage Temperature -55 +150
STG
Notes:
5. V
is internally clamped at 6.5V (I
FB
6. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
Pin Voltage 500 V
str
Feedback Voltage Range
7-DIP
7-MLSOP
-0.3
1.38
Internally
Clamped
(5)
8-DIP 1.47
Maximum Junction Temperature +150
Recommended Operating Junction Temperature
(6)
CLAMP_MAX
<100uA) which has a tolerance between 6.2V and 7.2V.
-40 +140
V
W
°C
°C
Thermal Impedance
TA=25°C unless otherwise specified. Items are tested with the standards JESD 51-2 and 51-10 (DIP).
Symbol Parameter Value Unit
7-DIP, 7-MLSOP
θJA Junction-to-Ambient Thermal Impedance
θJC Junction-to-Case Thermal Impedance
8-DIP
θJA Junction-to-Ambient Thermal Impedance
θJC Junction-to-Case Thermal Impedance
Notes:
7. Free-standing with no heatsink; without copper clad; measurement condition - just before junction temperature T
enters into TSD.
J
8. Measured on the DRAIN pin close to plastic interface.
(7)
90 °C/W
(8)
13 °C/W
(7)
85 °C/W
(8)
13 °C/W
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 4
Page 5
TElectrical Characteristics
T J=25°C unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
SenseFET Section
BV
I
DSS
R
DS(ON)
C
ISS
C
OSS
tr
tf
Control Section
fS
ΔfS
IFB
tBB
tBW
D
MAX
D
MIN
V
START
V
STOP
t
S/S
Burst-Mode Section
V
BURH
V
BURL
HYS
Protection Section
I
LIM
VSD
I
DELAY
t
LEB
TSD
HYS
Synchronous Section
VSH
VSL
t
Sync
Total Device Section
IOP
ICH
V
STR
Note:
9. These parameters, although guaranteed, are not 100% tested in production.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 5
Drain-Source Breakdown Voltage
DSS
Zero-Gate-Voltage Drain Current VDS=700V
Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Rise Time
Fall Time
(9)
(9)
(9)
V
(9)
V
V
V
V
CC
TJ=25°C, ID=180mA
T
=100°C, ID=180mA
J
GS
DS
DS
DS
Initial Switching Frequency VCC=11V, VFB=5V, V
Switching Frequency Variation
(9)
-25°C < T
Feedback Source Current VCC=11V, VFB=0V
V
Switching Blanking Time
Valley Detection Window Time
Maximum Duty Ratio VCC=11V, VFB=3V
Minimum Duty Ratio VCC=11V, VFB=0V
UVLO Threshold Voltage
Internal Soft-Start Time V
(9)
CC
V
sync
VFB=0V, VCC Sweep
After Turn-on, V
STR
=0V, ID=100μA
=11V
=40V
=350V, ID=25mA
=350V, lD=25mA
< 125°C
J
=11V, VFB=1V,
Frequency Sweep
=0V
FB
=40V, VCC Sweep
sync
=0V
700 V
150
28 32 
42 48 
96 pF
28 pF
100 ns
50 ns
87.7 94.3 100.0 kHz
±5 ±8 %
200 225 250
7.2 7.6 8.2
3.0
54 60 66 %
0 %
8.0 8.7 9.4 V
6.0 6.7 7.4 V
3 5 7 ms
0.75 0.85 0.95 V
Burst-Mode Voltage VCC=11V, VFB Sweep
0.65 0.75 0.85 V
100 mV
Peak Current Limit di/dt=90mA/µs
Shutdown Feedback Voltage
Shutdown Delay Current
Leading-Edge Blanking Time
FSQ510H
FSQ510(M)
Thermal Shutdown Temperature
Synchronous Threshold Voltage
Synchronous Delay Time
Operating Supply Current (Control Part Only)
(9)
V V
V
(9)
VCC=11V, VFB=1V
V
V
Startup Charging Current VCC=VFB=0V,V
Supply Voltage VCC=VFB=0V, V
=40V, VCC=11V,
DS
Sweep
FB
=11V, VFB=5V
CC
=11V, VFB=1V
CC
=11V, VFB=5.5V
CC
STR
STR
=40V
Sweep
280 320 360 mA
4.2 4.7 5.2 V
4 5 6
3.5 4.5 5.5
360 ns
130 140 150
60
0.55 0.70 0.85 V
0.05 0.10 0.15 V
180 200 220 ns
0.8 1.0 mA
1.0 1.2 mA
27 V
μA
μA
μs
μs
μA
°C
°C
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Page 6
Comparison between FSD210B and FSQ510
Function FSD210B FSQ510 Advantages of FSQ510
Control Mode Voltage Mode Current Mode
Operation Method
EMI Reduction
Method
Constant Frequency
PWM
Frequency
Modulation
Valley Switching
Operation
Valley Switching
Soft-Start 3ms (Built-in) 5ms (Built-in) Longer Soft-Start Time
Protection TSD TSD with Hysteresis Enhanced Thermal Shutdown Protection
Power Balance Long T
Less than 5W
Power Ratings
Under Open-Frame
Condition at the
Universal Line Input
Short T
CLD
More than 6W
Under Open-Frame
Condition at the
Universal Line Input
CLD
Fast Response Easy-to-Design Control Loop
Turn-on at Minimum Drain Voltage High Efficiency and Low EMI
Frequency Variation Depending on the Ripple of DC Link Voltage High Efficiency and Low EMI
Small Difference of Input Power between the Low and High Input Voltage Cases
More Output Power Rating Available due to the Valley Switching
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 6
Page 7
Typical Performance Characteristics
Characteristic graphs are normalized at TA=25°C.
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1.20
1.15
1.10
1.05
1.00
0.95
Normalized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Figure 4. Operating Frequency (f
1.20
1.15
1.10
1.05
1.00
0.95
Norm alized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Figure 6. Start Threshold Voltage (V
) vs. TA Figure 5. Peak Current Limit (I
OSC
) vs. TA Figure 7. Stop Threshold Voltage (V
START
1.20
1.15
1.10
1.05
1.00
0.95
Normalized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
LIM
1.20
1.15
1.10
1.05
1.00
0.95
Norm alized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
) vs. TA
) vs. TA
STOP
1.20
1.15
1.10
1.05
1.00
0.95
Norm alized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Figure 8. Shutdown Feedback Voltage (VSD) vs. TA Figure 9. Maximum Duty Cycle (D
1.20
1.15
1.10
1.05
1.00
0.95
Normalized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
MAX
) vs. TA
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 7
Page 8
Typical Performance Characteristics (Continued)
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1.20
1.15
1.10
1.05
1.00
0.95
Normalized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
1.20
1.15
1.10
1.05
1.00
0.95
Normalized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Figure 10. Feedback Source Current (IFB) vs. TA Figure 11. Shutdown Delay Current (I
1.20
1.15
1.10
1.05
1.00
0.95
Norm alized
0.90
0.85
0.80
-40 -25 0 25 50 75 100 125
Temperature [℃]
Figure 12. Operating Supply Current (IOP) vs. TA
DELAY
) vs. TA
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 8
Page 9
Functional Description
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the external capacitor (C illustrated in Figure 13. When V
) connected to the VCC pin, as
a
reaches 8.7V, the
CC
FPS begins switching and the internal high-voltage current source is disabled. The FPS continues normal switching operation and the power is supplied from the auxiliary transformer winding unless V
goes below the
CC
stop voltage of 6.7V.
V
DC
C
a
6.7V/
8.7V
V
CC
5
I
CH
VCC good
V
str
8
V
ref
Internal
Bias
Figure 13. Startup Block
2. Feedback Control: This device employs current-
mode control, as shown in Figure 14. An opto-coupler (such as the FOD817) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the R
resistor makes it possible to
sense
control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback voltage and reducing the drain current. This typically occurs when the input voltage is increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (V
*), as shown in Figure 14. Assuming
FB
that the 225µA current source flows only through the internal resistor (6R + R=12.6kΩ), the cathode voltage of diode D2 is about 2.8V. Since D1 is blocked when the feedback voltage (V
) exceeds 2.8V, the maximum
FB
voltage of the cathode of D2 is clamped at this voltage, clamping V
*. Therefore, the peak value of the current
FB
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the R
sense
resistor would lead to incorrect feedback operation in the current mode VS-PWM control. To counter this effect, the FPS employs a leading-edge blanking (LEB) circuit to inhibit the VS-PWM comparator for a short time (t
V
FOD817
O
KA431
) after the SenseFET is turned on.
LEB
V
V
ref
ref
I
delay
V
fb
3
D1 D 2
OB
V
SD
VS signal
I
FB
OSC
6R
+
*
V
R
fb
-
OLP
Gate
driver
SenseFET
R
sense
Figure 14. Valley Switching Pulse-Width
Modulation (VS-PWM) Circuit
3. Synchronization: The FSQ510 (H or M) employs a
valley-switching technique to minimize the switching noise and loss. The basic waveforms of the valley switching converter are shown in Figure 15. To minimize the MOSFET switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 15. The minimum drain voltage is indirectly detected by monitoring the V
B
B winding voltage, as shown in Figure 15.
CC
V
DS
V
RO
V
V
Sync
MOSFET
Gate
ON
V
DC
0.7V
t
F
RO
0.1V
200ns Delay
ON
Figure 15. Valley Switching Waveforms
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 9
Page 10
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
4. Protection Circuits: The FSQ510 (H or M) has two
self-protective functions, overload protection (OLP) and thermal shutdown (TSD). The protections are implemented as auto-restart mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes V V
B
B falls down to the under-voltage lockout (UVLO) stop
CC
to fall. When
CC
most applications. This protection is implemented in auto-restart mode.
V
FB
4.7V
Overload Protection
voltage of 6.7V, the protection is reset and the startup circuit charges the V
capacitor. When VCC reaches
CC
the start voltage of 8.7V, the FSQ510 (H or M) resumes normal operation. If the fault condition is not removed, the SenseFET remains off and V
drops to stop
CC
2.8V
voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, reliability is improved without increasing cost.
Fault
V
Power
ds
on
occurs
Fault
removed
t
1
Figure 17. Overload Protection
4.2 Thermal Shutdown (TSD): The SenseFET and the
t12= CB•(4.7-2.8)/I
delay
t
2
t
control IC on a die in one package make it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds approximately 140°C, the thermal shutdown triggers and the FPS stops operation. The FPS operates in auto-restart mode until the temperature decreases to
V
CC
8.7V
6.7V
around 80°C, when normal operation resumes.
5. Soft-Start: The FPS has an internal soft-start circuit
that increases the VS-PWM comparator inverting input voltage, together with the SenseFET current, slowly after it starts up. The typical soft-start time is 5ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors.
t
Normal
operation
Fault
situation
Normal
operation
Figure 16. Auto Restart Protection Waveforms
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an unexpected event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited and, therefore, the maximum input power is restricted with a given input voltage. If the output consumes more than this maximum power, the output voltage (V
The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This helps prevent transformer saturation and reduces stress on the secondary diode during startup.
6. Burst-Mode Operation: To minimize power
dissipation in standby mode, the FPS enters burst­mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 18, the device automatically enters burst mode when the feedback voltage drops below V
(750mV). At this point,
BURL
switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes V (850mV), switching resumes. The feedback voltage then falls and the process repeats. Burst mode alternately enables and disables switching of the SenseFET, reducing switching loss in standby mode.
)
o
BURH
decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, increasing the feedback voltage (V blocked and the 5µA current source starts to charge C slowly up
In this condition, VFB continues increasing
.
). If VFB exceeds 2.8V, D1 is
FB
B
until it reaches 4.7V, when the switching operation is terminated, as shown in Figure 17. The delay time for shutdown is the time required to charge C
from 2.8V to
B
4.7V with 5µA. A 20 ~ 50ms delay time is typical for
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 10
Page 11
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Vo
set
Vo
V
FB
0.85V
0.75V
I
ds
V
ds
time
t
1
Switching
disabled
Switching
disabled
t3t
2
t
4
Figure 18. Burst-Mode Operation
7. Advanced Valley Switching Operation: To
minimize switching loss and Electromagnetic Interference (EMI), the MOSFET turns on when the drain voltage reaches its minimum value in VS converters. Due to the Discontinuous Conduction Mode (DCM) operation, the feedback voltage is not changed, despite the DC link voltage ripples, if the load condition is not changed. Since the slope of the drain current is changed depending on the DC link voltage, the turn-on duration of MOSFET is variable with the DC link voltage ripples. The switching period is changed continuously with the DC link voltage ripples. Not only the switching at the instant of the minimum drain voltage, but also the continuous change of the switching period, reduces EMI. V
converters inherently scatter the EMI spectrum.
S
Typical products for VSC turn the MOSFET on when the first valley is detected. In this case, the range of the switching frequency is very wide as a result of the load variations. At a very light-load, for example, the switching frequency can be as high as several hundred kHz. Some products for VSC, such as Fairchild’s FSCQ-series, define the turn-on instant of SenseFET change at the first valley into at the second valley, when the load condition decreases under its predetermined level. The range of switching frequency narrows somewhat. For details, consult an FSCQ-series datasheet, such as:
http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html
The range of the switching frequency can be limited tightly in FSQ-series. Because a kind of blanking time (t
) is adopted, as shown in Figure 19, the switching
B
frequency has minimum and maximum values.
Once the SenseFET is enabled, the next start is prohibited during the blanking time (t
). After the
B
blanking time, the controller finds the first valley within the duration of the valley detection window time (t (case A, B, and C). If no valley is found in t internal SenseFET is forced to turn on at the end of t
, the
W
)
W
B
W
(case D). Therefore, FSQ510, FSQ510H, and FSQ510M have minimum switching frequency of
94.3kHz and maximum switching frequency of 132kHz, typically, as shown in Figure 20.
max
T
=10.6µs
I
ds
s
I
DS
A
tB=7.6µs
T
s_A
I
DS
I
DS
B
tB=7.6µs
T
s_B
I
DS
I
DS
C
tB=7.6µs
T
s_C
tW=3µs
C
I
DS
D
Constant
frequency
D
P
o
I
DS
tB=7.6µs
max
T
=10.6µs
s
Figure 19. Advanced VS Operation
132kHz
104 kHz
94.3 kHz
When the resonant period is 2µs
A
Burst mode
B
Figure 20. Switching Frequency Range of the
Advanced Valley Switching
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 11
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FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Package Dimensions
Figure 21. 7-Lead, Dual In-line Package (DIP)
Package drawings are provided as a service to customers consi deri ng Fai rc hi l d components. Drawings may change in any manner without notice. Pl ease note the revision and/or date on the drawing and c ontact a Fairchild Semiconductor representat i ve to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visi t Fai rchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsem i.com/p ackagi ng/
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 12
.
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Package Dimensions (Continued)
9.83
9.00
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
6.67
6.096
8.255
7.61
3.60
3.00
3.683
3.20
0.356
0.20
5.08 MAX
0.33 MIN
(0.56)
2.54
0.56
0.355
1.65
1.27
7.62
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO
JEDEC MS-001 VARIATION BA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
D) DIMENSIONS AND TOLERANC
ES PER
ASME Y14.5M-1994
E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.
7.62
9.957
7.87
Figure 22. 8-Lead, Dual In-line Package (DIP)
Package drawings are provided as a service to customers consi deri ng Fai rc hi l d components. Drawings may change in any manner without notice. Pl ease note the revision and/or date on the drawing and c ontact a Fairchild Semiconductor representat i ve to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visi t Fai rchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsem i.com/p ackagi ng/
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 13
.
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Package Dimensions (Continued)
FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
MKT-MLSOP07ArevA
Figure 23. 7-Lead, MLSOP
Package drawings are provided as a service to customers consi deri ng Fai rc hi l d components. Drawings may change in any manner without notice. Pl ease note the revision and/or date on the drawing and c ontact a Fairchild Semiconductor representat i ve to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visi t Fai rchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsem i.com/p ackagi ng/
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 14
.
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FSQ510, FSQ510H, and FSQ510M — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ510, FSQ510H, and FSQ510M • Rev. 1.3.0 15
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