Datasheet FLC02-200D Datasheet (SGS Thomson Microelectronics)



Application SpecificDiscretes

A.S.D.

FEATURES

SPACE SAVING :MONOLITHIC FIRE LIGHTER
FUNCTION INTEGRATION

DEDICATED THYRISTOR STRUCTURE FOR
CAPACITANCE DISCHARGE IGNITION
OPERATION

TM

FLC02-200D

FIRE LIGHTER CIRCUIT

HIGH PULSECURRENT CAPABILITY
150A @ tp = 10µs

DESCRIPTION

The FLC02 is a high performance planar dif-

-

fused technology adapted to high temperature
and rugged environmentalconditions.

It has been developed especially for capaci-

-

tance discharge operation. The main applica­tions are ignitorcircuitssuch as :
fuel ignitiors / gasboilers...

Th : Thyristor for switchingoperation.
Z : Zener diode to set the thresholdvoltage.
D : Diode for reverseconduction.
R : 2 kOhm resistor.

1

2

3

SOT82

(Plastic)

FUNCTIONAL DIAGRAM

Z

pin 3

R

pin 2

Th

D

February 1996

pin 1

1/7

FLC02-200D

ABSOLUTE RATINGS (limiting values) : 0°C<T

amb

<90°C

Symbol Parameter Value Unit

I

TRM

I

FRM

I

TSM

Repetitivesurgepeakonstatecurrentforthyristor tp =10µs
Repetitivesurgepeakonstatecurrentfordiode

( note 1)

150 A

Non repetitivesurgepeakonstate current tp =10ms 5 A

di/dt Criticalrateof rise time on statecurrent 120 A/µs

T

stg

Tj

Toper

T

L

Storage junction temperaturerange
Maximumjunctiontemperature

Operatingtemperaturerange
Maximumleadtemperaturefor solderingduring10s 260 °C

- 40 to+150
+ 125

0+90 °C

Note 1 : Test currentwaveform

°C

µ

10 s

200ms

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th(j-a)

Thermalresistance junctionto ambient 100 °C/W

ORDERINGINFORMATION

FLC 02 - 200 D

FIRE LIGHTERCIRCUIT

PACKAGED: SOT82

2/7

CIRCUIT NUMBER : 02 =scr + diode + zener + resistance
(gate connectedto pin 3)



V

RM

200= 200 V

FLC02-200D

ELECTRICAL CHARACTERISTICS

Symbol Parameters

V

RM

V

BO

V

T

V

F

I

RM

I

BO

Stand-offvoltage
Breakovervoltage
On-statevoltagedrop
Diodevoltagedrop
Leakage current
Breakovercurrent

V

BO

V

RM

I

I

F

V

T

I

RM

I

BO

I

BO

I

V

F

1

2

T

DIODE (D) PARAMETER

Symbol Test Conditions Value Unit

V

F

IF=2A tp≤1ms Tj=25°C MAX 1.7 V

THYRISTOR(Th) and ZENER (Z) PARAMETERS

V

Symbol Testconditions Value Unit

I

RM

VRM=200V Tj = 25°CMAX 10 µA

Tj =120°C MAX 100 µA

V

BO

I

1atVBOPin3 (gate) open Tj = 25°C MAX 0.5 mA

BO

I

2atVBOPin1( c athode)and pin3(gate)in c/c Tj = 25°C MIN 40 mA

BO

V

T

Fig.1 : Relative variationof breakovercurrent(I

at I

Pin3 (gate) open Tj = 25°C MAX 250 V

BO1

IT=2A tp≤1ms Tj = 25°C MAX 1.7 V

) versus junction temperature

BO

Ibo (Tj) / Ibo (25°C)

1.4

1.2

1

IbO2

0.8

IbO1

0.6

0.4
020406080

Tj (°C)



3/7

FLC02-200D

BASIC APPLICATION

Rs DTs

AC

MAINS

Ic

Ic

t

c

Th

Z

D

Sensor

The applications of the FLC02 using the capaci­tance discharge topologyoperatein2modes:

- Ignitionmode: TransistorTisOFF

- Blankingmode: TransistorT is ON

1) IGNITION MODE(TransistorT

OFF

)

PHASE1:

The energy coming from the mains is stored into
the capacitorC. Forthat, the AC voltageisrectified
by thediode Ds.

PHASE2 :
At the end of the phase 1, the voltage across the

capacitor C reaches the avalanche threshold of
the zener.Then a currentflows throughthegateof
the thyristorTh which fires.

The firingofthethyristorcauses analternatingcur­rent to flow through the capacitorC.

The positivepartsofthiscurrentflowthroughC,Th
and the primary of the HV transformer.

The negativeparts of the currentflowthroughC,D
and the primary of the HV transformer.

R

RS RESISTOR CALCULATION

The Rs resistorallows,in addition withthe capaci­tor C, to adjustthe sparkfrequencyandto limitate
the current from the mains. Its value shall allow
the thyristor Th to fire even in the worst case. In
this borderline case the system must fire with the
lower RMS mains voltage value while the break­down voltage and current of the FLC are at the
maximum.

The maximumRs valueis equal to :

V

Rs

max =

minx√2 )−

(

AC

I

BO

1

max

V

BO

max

4/7



Fig2. : Spark frequency versusRs and C

F (Hz)
20

FLC02-200D

C=0.47µF

10

C=3.3µF

C=2.7µF

C=1.5µF

C=2.2µF

C=1µF

5

3

2

6111621

Rs (kOhms)

The coupleRs/C can be chosen withthe previous
curve. Keep in mind the Rs maximum limit for
which the system would not work when the AC

Fig. 3 : Voltageacross the capacitance with Rs = 15 kOhmsand C = 1µF

mains is minimum.
The next curve shows the behavior with
Rs=15kOhmsandC=1µF.

5/7

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FLC02-200D

PEAK CURRENT LIMIT

This compo nent is designed to withstand
Ip = 150Aforapulsedurationof10µsforan ambi­ent temperatureof 90°C.

Fig. 4 :Peak current limit

Ip (A)
190
180
170

160
150

140
130

120

The curve of peak current versus the pulse dura­tionallowsustoverifyiftheapplicationiswithinthe
FLC operating limit.

110

6 8 10 12 14

t(µs)

POWER LOSSES (For 10µs, see note 1)
To evaluatethepower losses, please usethefollowing equations :
For the thyristor: P = 1.18 x I
For the diode : P = 0.67 x I

F(AV)

T(AV)

+0.106I

+0.035I

2/ BLANKING MODE (Transistor TON)

In thismodeandtransistorTis saturatedandstops
the sparkgeneration.

Rs (kohms)

100

80

60

40

20

2

2

F(RMS)

T(RMS)

In order to keep the thyristor Th in blanking mode
and becauseofthepower dissipation,theResistor
(Rs) has to keep a minimum value of 22 kΩ (see
next curve) :

Rs max

Rs min

6/7

0

0 20406080100120

Tamb(°C)

Vac= 220V +15%

-10%



PACKAGEMECHANICAL DATA

SOT82 (Plastic)

FLC02-200D

CA

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

B

A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
C 2.4 2.7 0.094 0.106

H

D 0.7 0.9 0.027 0.035
E 2.2 typ. 0.087typ.

L

D

M

F

E

G

F 0.49 0.75 0.019 0.029
G 4.15 4.65 0.163 0.183

H (1) 2.54 0.100

L 15.7 typ. 0.618 typ.

M 1.0 1.3 0.039 0.051

(1) Within this region the cross-section of the
leads isuncontrolled

Markingtype number
Weight: 0.72g.

Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under anypatentorpatent rightsofSGS-THOMSONMicroelectronics. Specifications mentioned
in this publication are subjectto change without notice.Thispublication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized foruse ascritical components inlife support devicesor systems without express
written approval of SGS-THOMSON Microelectronics.

 1996 SGS-THOMSON Microelectronics -Printedin Italy- All rights reserved.

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