Datasheet FJAF4310YTU Specification

FJAF4310
NPN Epitaxial Silicon Transistor

Features

• Audio Power Amplifier

• High Current Capability : I

• High Power Dissipation

•Wide S.O.A

• Complement to FJAF4210

=10A

C

1

1.Base 2.Collector 3.Emitter

TO-3PF

FJAF4310 — NPN Epitaxial Silicon Transistor

October 2009

Absolute Maximum Ratings* T

=25°C unless otherwise noted

A

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

R

θJC

T

J

T

STG

Electrical Characteristics T

Collector-Base Voltage 200 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A
Base Current (DC) 1.5 A
Collector Dissipation (TC=25°C) 80 W
Junction to Case 1.48 °C/W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C

=25°C unless otherwise noted

A

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

VCE(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A 0.5 V

C

ob

f

T

* Pulse Test : PW=20μs

Collector-Base Breakdown Voltage IC=5mA, IE=0 200 V
Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ 140 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 6 V
Collector Cut-off Current VCB=200V, IE=0 10 μA
Emitter Cut-off Current VEB=6V, IC=0 10 μA
* DC Current Gain VCE=4V, IC=3A 50 180

Output Capacitance VCB=10V, f=1MHz 250 pF
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz

hFE Classification

Classification R O Y

h

FE

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJAF4310 Rev. B0 1

50 ~ 100 70 ~ 140 90 ~ 180

Typical Perpormance Characteristics

FJAF4310 — NPN Epitaxial Silicon Transistor

10

IB = 400mA

9

8

7

6

5

4

3

2

[A], COLLECTOR CURRENT

C

I

1

0

01234

IB = 300mA

VCE [V], COLLECTOR-EM ITT E R VO LT A GE

IB = 250mA

IB = 200mA

IB = 150mA

IB = 100mA

IB = 50mA

IB = 20mA

1000

Ta = 125 oC

100

Ta = - 25 oC

, DC CURRENT GAIN

FE

h

10

0.1 1 10

Ta = 25 oC

IC [A], COLLECTOR CURRENT

Figure 1. Static Characterstic Figure 2. DC current Gain

3.0

2.5

2.0

1.5

1.0

0.5

(sat) [V], SATURATION VOLTAGE

CE

V

0.0

0.0 0.4 0.8 1.2 1.6 2.0

IC= 5A

IB [A], BASE CURRENT

IC= 10A

1

IC = 10 I

B

0.1

(sat) [V], SA T U R A T I O N V O L T AGE

CE

V

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

VCE = 4 V

Ta = 125 oC

Ta = 25 oC

Ta = - 25 oC

Figure 3. V

10

(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage

CE

VCE = 4 V

t=10ms

[A], COLLECTOR CURRENT
I

8

6

4

2

C

0

0.0 0.5 1.0 1.5

Ta = 25 oC

Ta = 125 oC

Ta = - 25 oC

VBE [V], Base-Emitter On VOLTAGE

I

(Pulse)

C

10

I

(DC)

C

1

Ic [A], COLLECTOR CURRENT

=25oC

T

C

Single Pulse

0.1

0.1 1 10 100

t=100ms

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJAF4310 Rev. B0 2

Typical Perpormance Characteristics (Continued)

100

80

60

40

20

[W], COLLECTOR POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 7. Power Derating

FJAF4310 — NPN Epitaxial Silicon Transistor

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJAF4310 Rev. B0 3

Physical Dimension

26.50

14.80

3

2

±0.20

4.50

15.50

TO-3PF

±0.20

ø3.60

±0.20

±0.20

10.00

10°

5.50

3.00
(1.50)

FJAF4310 — NPN Epitaxial Silicon Transistor

±0.20

±0.20

±0.20

±0.20

±0.20

±0.20

14.50

16.50

2.00

2.00

4.00

0.75

5.45TYP

[5.45

±0.20

.30

±0.20
±0.20

±0.20

+0.20
–0.10

±0.30

±0.20

2.00

]

±0.20

.00

2.00

5.45TYP

[5.45

±0.20

2.50

±0.20

±0.30

±0.20

5.50

]

0.85

±0.20

16.50

±0.03

0.90

±0.20

1.50

2.00

3.30

+0.20
–0.10

±0.20

±0.20

±0.20

23.00

±0.20

22.00

Dimensions in Millimeters

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJAF4310 Rev. B0 4

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.

Rev. I41

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com