Page 1
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
FJD3076
FJD3076
1
D-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
P
CBO
CEO
EBO
C
Collector-Base Voltage 40 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 5 V
Collector Current 2 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (T
T
J
T
STG
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.5 0.8 V
V
CE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 32 V
Collector-Base Breakdown Voltage IC = 50µA40 V
Emitter-Base Breakdown Voltage IE = 50µA5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
=25°C) 10 W
C
TC=25°C unless otherwise noted
= 20V , IE = 0 1 µA
CB
= 4V, IC = 0 1 µA
EB
= 3V, IC= 0.5A 130 390
CE
= 5V, IE = -0.5A,
CE
f = 100MHz
= 10V , IE = 0A,
CB
100 MHz
50 pF
f = 1MHz
©2001 Fairchild Semiconductor Corporation Rev. C1, December 2001
Page 2
Typical Characteristics
FJD3076
2.0
1000
IB = 20mA
1.6
1.2
0.8
[A], COLLECTOR CURRENT
C
0.4
I
0.0
0102030
IB = 18mA
IB = 16mA
IB = 14mA
IB = 12mA
IB = 10mA
IB = 8mA
IB = 6mA
IB = 4mA
IB = 2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
, DC CURRENT GAIN
FE
h
10
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC Current Gain
10
1
0.1
(sat)[V], SATURAT ION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 10 I
B
1000
100
[pF], C APACITANCE
ob
C
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 3V
VCE = 1V
IE=0
f=1MHz
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
(mA), COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VBE(mV), BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
10ms
PW=100us
1ms
DC
S/b Limited
MAX.
CEO
V
Rev. C1, December 2001
VCE = 3V
10
IC(Pulse) MAX.
IC(DC) MAX.
1
Dissipation Limited
0.1
[A], COLLECTO R CURRENT
C
I
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Page 3
Package Demensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
FJD3076
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
±0.10
0.91
0.89 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.70)
0.76 ±0.10
MIN0.55
(1.00)
(0.90)
(0.10) (3.05)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. C1, December 2001
Page 4
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®
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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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©2001 Fairchild Semiconductor Corporation Rev. H4
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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