Page 1
tm
FJMA790
PNP Epitaxial Silicon Transistor
High current surface mount PNP silicon switching transistor
for load management in portable applications
• High Collector current
• Low Collector-Emitter Saturation Voltage
•RoHS Compliant
FJMA790 PNP Epitaxial Silicon Transistor
June 2006
RoHS Compliant
Pin 1 Pin 3
Collector
Emitter
1
C
2
C
6
C
5
C
3
Pin 6 Pin 4
MicroFET2X2
B
4
E
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
D
J
STG
Collector-Base Voltage -50 V Collector-Emitter Voltage -35 V Emitter-Base Voltage -5 V Collector Current (DC) -2 A Power Dissipation Note1)
Note2) Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C
= 25°C unless otherwise noted
a
1.56
0.8
W
W
Thermal Characteristics T
Symbol Parameter Max.
RΘ
Note1): The device mounted on a 1inch2 pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material.
Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJMA790 Rev. A
Thermal Resistance, Junction to Ambient Note1)
JA
Note2)
=25°C unless otherwise noted
a
80
154
Units
°C/W
°C/W
Page 2
FJMA790 PNP Epitaxial Silicon Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Typ. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
CBO
CEO
EBO
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -35 V Emitter-Base Breakdown Voltage IC = -100µA, IC = 0 -5 V Collector Cut-off Current VCB = -35V, IC = 0 -0.1 µA Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA DC Current Gain VCE = -1.5V, IC = -1A
VCE = -1.5V, IC = -1.5A
VCE = -3V, IC = -2A
VCE = -2V, IC = -500mA
Collector-Emitter Saturation Voltage IC = -500mA, IB = -5mA
IC = -1A, IB = -10mA
IC = -2A, IB = -50mA
100
100
100
100
400
-250
-350
-450 Base-Emitter Saturation Voltage IC = -1A, IB = -10mA -0.9 V Base-Emitter On Voltage VCE = -2V, IC = -1A -0.9 V
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
790 FJMA790 MLP 2×2 Single 7” 8mm 3,000 units
mV
mV
mV
FJMA790 Rev. A1
2 www.fairchildsemi.com
Page 3
Typical Characteristics
FJMA790 PNP Epitaxial Silicon Transistor
600
500
125oC
400
Vce=-1.5V
500
400
125oC
75oC
75oC
300
25oC
200
hfe, DC Current Gain
100
1E-3 0.01 0.1 1
-40oC
Collector Current, [A]
300
25oC
200
hfe, DC Current Gain
100
1E-3 0.01 0.1 1
-40oC
Collector Current, [A]
Figure 1. DC Current Gain, Vce=1.5V Figure 2. DC Current Gain, Vce=2V
0.5
0.4
0.3
0.2
0.1
-40oC
Vce(sat), Saturation Current,[V]
0.0
0.01 0.1 1
Collector Current, [A]
Ic=40Ib
25oC
500
125oC
400
75oC
300
25oC
200
hfe, DC Current Gain
100
1E-3 0.01 0.1 1
-40oC
Collector Current, [A]
Vce=-3.0V
Vce=-2.0V
75oC
125oC
Figure 3. DC Current Gain,Vce=3V
1.0
0.8
0.6
25oC
0.4
0.2
-40oC
Vce(sat), Saturation Current,[V]
0.0
0.01 0.1 1
Collector Current, [A]
Figure 5. Collector-Emitter Satuation Voltage(2)
FJMA790 Rev. A
Ic=100Ib
125oC
75oC
Figure 4. Collector-Emitter Satuation Voltage(1)
1.0
0.8
125oC
75oC
0.6
25oC
-40oC
0.4
Vbe(sat), Saturation Current,[V]
0.01 0.1 1
Collector Current, [A ]
Ic=100Ib
Figure 6. Base-Emitter Saturation Voltage
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Vce=-2V
1
FJMA790 PNP Epitaxial Silicon Transistor
1E-7
Vcb=-35V
1E-8
1E-9
1E-10
0.1
Emitter Current, [A]
125oC 75oC
25oC
-40oC
Icbo(A), Reverse Leakage Current
0.01
0.40.60.81.0
Vfbe(on), Turn on voltage,[V]
1E-11
25 50 75 10 0 125
Ta(oC), Ambent Temperature
Figure 7. Base- Emitter Turn On Voltage Figure 8. Collector-Base Leakage Current
1E-7
1E-8
1E-9
1E-10
Icbo(A), Reverse Leakage Current
1E-11
25 50 75 100 125
Ta(oC), Ambent Temperature
Veb=-4V
2.0
1.5
1.0
0.5
Pd, Power Dissipation,[W]
0.0
0 25 50 75 100 125 150 175
Case Temperature, Ta[oC]
Figure 9. Base-Emitter Leakage Current
[pF]
ib
Input Juntion Capacitance, C
FJMA790 Rev. A
300
275
250
225
200
175
150
125
100
012345
f=1mhz
Reverse Voltage, VR[V]
Figure 11. Input Capacitance
Figure 10. Power Derating
100
90
[pF]
ob
80
70
60
50
40
30
20
10
Output Juntion Capacitance, C
0 1020304050
Reverse Voltage, VR[V]
f=1mhz
Figure 12. Output Capacitance
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response
1
FJMA790 PNP Epitaxial Silicon Transistor
0.1
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
D = 0.5
0.2
0.1
0.05
0.02
0.01
SIN GLE PU LS E
R
(t) = r(t) * R
θ
JA
R
= 154 °C/W
θ
JA
P(p
t
1
t
2
- TC = P * R
T
J
Duty Cycle, D = t
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
, T IM E (s e c )
t
1
θ
JA
(t)
θ
JA
/ t
1
2
FJMA790 Rev. A1
5 www.fairchildsemi.com
Page 6
Mechanical Dimensions
FJMA790 PNP Epitaxial Silicon Transistor
MicroFET2X2
FJMA790 Rev. A1
Dimensions in Milimeters
6 www.fairchildsemi.com
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
FJMA790 PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and supplementary
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semi-
Obsolete Not In Production This datasheet contains specifications on a product that has
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
conductor reserves the right to make changes at any time
without notice in order to improve design.
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
FJMA790 Rev. A
Rev. I19
7 www.fairchildsemi.com
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