Datasheet FJA13009TU Specification

Page 1
FJA13009 High-Voltage Switch Mode Application
Features
• High-Speed Switching
FJA13009 — High Voltage Switch Mode Application
July 2013
1
1.Base 2.Collector 3.Emitter
TO-3P
Ordering Information
Part Number Marking Package Packing Method
FJA13009TU J13009 TO-3P Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera­ble above the recommended operating co nd iti ons an d s tres si ng the parts to these levels is not recomme nded. In addi­tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T
Symbol Parameter Value Units
V
V
V
T
CBO
CEO
EBO
I
C
I
CP
I
B
P
D
T
J
STG
Collector-Base Voltage 700 V Collector-Emitter V oltage 400 V Emitter-Base Voltage 9 V Collector Current (DC) 12 A Collector Current (Pulse) 24 A Base Current 6 A Total Device Dissipation (TC = 25°C) 130 W Junction Temperature 150 °C Storage Temperature - 65 to +150 °C
= 25°C unless otherwise noted.
C
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 1
Page 2
FJA13009 — High Voltage Switch Mode Application
Electrical Characteristics
(1)
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 0 400 V
CEO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage
V
CE
(sat) Base-Emitter Saturation Voltage
V
BE
C
ob
f
T
t
ON
STG
t
F
Emitter Cut-Off Current V DC Current Gain
Output Capacitance V Current Gain Bandwidth Product V Turn-On Time Storage Time 3.0 Fall Time 0.7
Note:
1. Pulse test: pulse width 300 μs, duty cycle 2%.
= 7 V, IC = 0 1 mA
EB
V
= 5 V, IC = 5 A 8 40
CE
= 5 V, IC = 8 A 6 30
V
CE
I
= 5 A, IB = 1 A 1.0
C
= 8 A, IB = 1.6 A 1.5
C
= 12 A, IB = 3 A 3.0
I
C
I
= 5 A, IB = 1 A 1.2
C
= 8 A, IB = 1.6 A 1.6
I
C
= 10 V, f = 0.1 MHz 180 pF
CB
= 10 V, IC = 0.5 A 4 MHz
CE
=125 V, IC = 8 A
V
CC
= - I
I
B1
B2
= 15.6 Ω
R
L
= 1.6 A
1.1
VI
V
μst
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 2
Page 3
Typical Performance Characteristics
0.1 1 10 100
1
10
100
VCE = 5V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 3 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
10
100
1000
10000
VCC=125V IC=5I
B
tD, VBE(off)=5V
t
R
t
R
, t
D
[ns], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.1 1 10 100
100
1000
10000
VCC=125V IC=5I
B
t
F
t
STG
t
STG
, t
F
[ns], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
1
0
μs
10
0
μ
s
1ms
D
C
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
FJA13009 — High Voltage Switch Mode Application
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn-On Time
Figure 5. Turn-Off Time Figure 6. Forward Bias Safe Operating Area
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 3
Page 4
Typical Performance Characteristics (continued)
10 100 1000 10000
0.01
0.1
1
10
100
Vcc=50V, I
B1
=1A, IB2 = -1A
L = 1mH
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
P
C
[W], POWER DISSIPATION
Tc[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
FJA13009 — High Voltage Switch Mode Application
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 4
Page 5
Physical Dimensions
R
0.50
15.80
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.90
1.90
0.75
0.55
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5 D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) THIS PACKAGE IS INTENDED ONLY FOR TO3PN. F) DRAWING FILE NAME: TO3P03AREV4.
1
3
TO-3P
FJA13009 — High Voltage Switch Mode Application
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Figure 9. 3-LEAD, T03, PLASTIC, EIAJ SC-65 (ACTIVE)
Always visit Fairchild Semiconductor’s online packagin g area for t he most rece nt package d rawings:
http://www.fairchildsemi.com/dwg/TO/TO3P03A.pdf
For current tape and reel specifications, visit Fairchild Semicond uctor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO3P03A_TSC.pdf
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 5
.
.
Page 6
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