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FDD6770A
(
)
N-Channel PowerTrench® MOSFET
25 V, 4.0 mΩ
Features
Max r
Max r
100% UIL tested
RoHS Compliant
= 4.0 mΩ at VGS = 10 V, ID = 24 A
DS(on)
= 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
FDD6770A N-Channel PowerTrench
January 2009
and fast
DS(on)
®
MOSFET
D
G
D
G
S
D-PAK
TO-252
TO-252
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 50 mJ
Power Dissipation TC = 25 °C 50
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +175 °C
= 25 °C unless otherwise noted
C
= 25 °C 97
C
= 25 °C (Note 1a) 24
A
= 25 °C (Note 1a) 3.7
A
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3.0
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD6770A FDD6770A D-PAK (TO-252) 13 ’’ 12 mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
1
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FDD6770A N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 16 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 24 A 2.9 4.0
GS
= 4.5 V, ID = 18.4 A 5.9 8.0
GS
= 10 V, ID = 24 A, TJ = 150 °C 4.4 6.1
V
GS
Forward Transconductance VDS = 5 V, ID = 24 A 148 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 392 525 pF
Reverse Transfer Capacitance 354 535 pF
Gate Resistance 1.2 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 714ns
Turn-Off Delay Time 24 44 ns
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 18 26 nC
Gate to Source Charge 4.8 nC
Gate to Drain “Miller” Charge 7.4 nC
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
= 13 V, ID = 24 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 24 A
D
= 13 V,
1805 2405 pF
918ns
33 47 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
of 50 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 10 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 24 A.
3: E
AS
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 4 10 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins .
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
V
= 0 V, IS = 3.1 A (Note 2) 0.7 1.2
GS
= 0 V, IS = 24 A (Note 2) 0.8 1.3
V
GS
= 24 A, di/dt = 100 A/µs
I
F
2
b)
16 28 ns
96 °C/W when mounted on
a minimum pad
V
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Page 3
FDD6770A N-Channel PowerTrench
Typical Characteristics T
200
VGS = 10 V
150
100
DRAIN CURRENT (A)
,
D
50
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
Figure 1.
1.8
ID = 24 A
V
= 10 V
GS
1.6
1.4
VGS = 6 V
VGS = 8 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
,
DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
4.0
3.5
3.0
VGS = 3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
= 4 V
GS
2.5
2.0
NORMALIZED
1.5
VGS = 8 V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 50 100 150 200
I
,
DRAIN CURRENT (A)
D
Nor m a l i z e d On-Resis t a n c e
vs Drain Current and Gate Voltage
20
)
Ω
m
(
15
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 24 A
VGS = 4.5 V
VGS = 6 V
V
GS
= 10 V
®
MOSFET
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T
,
JUNCTION TEMPERATURE
J
o
(
C
)
Fi gure 3 . No r mali zed O n Res i sta n ce
vs Junction Temperature
200
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
V
= 3 V
DS
100
50
, DRAIN CURRENT (A)
D
I
0
01234567
TJ = 175 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = -55 oC
10
DRAIN TO
,
DS(on)
r
5
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO S O URCE VOLTAGE (V )
GS
Figure 4.
On-Re sistance v s Gate to
TJ = 150 oC
TJ = 25 oC
Source Voltage
200
V
= 0 V
GS
100
10
TJ = 175 oC
1
, REVERSE DRAIN CURRENT (A)
S
I
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
Figure 6.
Sou rce to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDD6770A N-Channel PowerTrench
Typical Characteristics T
10
ID = 24 A
8
V
= 10 V
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25 30 35
Figure 7.
Gate Charge Characteristics Figure 8.
100
10
, AVALANCHE CURRENT (A)
AS
I
1
0.001 0.01 0.1 1 10 100
DD
VDD = 13 V
Qg, GATE CHARGE (nC)
tAV, TIME IN AVALANCHE (ms)
TJ = 150 oC
= 25 °C unless otherwise noted
J
VDD = 15 V
TJ = 125 oC
TJ = 25 oC
5000
1000
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTA G E (V)
Capacitance vs Drain
to Source Voltage
90
60
V
30
Limited by P ackage
DRAIN CURRENT (A)
,
D
I
R
= 3.0 oC/W
θ
JC
0
25 50 75 100 125 150 175
T
,
CASE TEMPERATURE
C
V
= 4.5 V
GS
o
(
C
)
GS
C
iss
C
oss
C
rss
= 10 V
30
®
MOSFET
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
300
100
10
THIS AREA IS
LIMITED BY r
1
, DRAIN CURRENT (A)
D
I
0.1
0.1 1 10 100
DS(on)
SINGLE PULSE
T
= MAX RATED
J
R
= 3.0 oC/W
θ
JC
T
= 25 oC
C
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
Figure 10.
Ma xi mum Co nti nuous Drain
Current vs Case Temperature
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
5000
1000
100
30
-5
10
Figure 12.
VGS = 10 V
SINGLE PULSE
R
= 3.0 oC/W
θ
JC
T
= 25 oC
C
-4
10
-3
10
t, PULSE WIDTH (sec)
10-210
-1
Single Pu ls e M aximum
1
10
10 us
100 us
1 ms
10 ms
100 ms
DC
Power Dissipation
4
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Page 5
FDD6770A N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
JC
θ
Z
0.1
IMPEDANCE,
NORMALIZED THERMAL
0.01
1
JA
θ
0.1
Z
0.01
IMPEDANCE,
NORMALIZED THERMAL
0.001
0.005
0.2
0.1
0.05
0.02
0.01
-5
10
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
SINGLE PULSE
R
θ
10
= 25 °C unless otherwise noted
J
= 3.0 oC/W
JC
-4
-3
10
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
= 96 oC/W
R
θ
JA
(
Note 1b
)
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
P
DM
NOTES:
-2
10
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1/t2
x R
θJC
-1
10
P
DM
1/t2
x R
θJA
110
t
1
t
2
+ T
θJc
C
1
t
1
t
2
+ T
θJA
A
100 1000
®
MOSFET
Figure 14.
©2009 Fairchild Semiconductor Corporation
FDD6770A Rev.C
Junction-to-Ambient Transient Thermal Response Curve
5
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Page 6
TRADEMARKS
®
tm
tm
The following includes registered and unregistered tra demarks and service marks, owned by Fairchild Semico nductor and/or its glo bal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
®
®
®
®
®
*
®
* EZSWITCH™ and FlashWriter
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
SM
®
PowerTrench
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
™
®
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
®
®
VisualMax™
®
FDD6770A N-Channel PowerTrench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts i s a growing problem in the industry. All manufactures of se miconductor products are experiencing counterfeit ing of their
parts. Customers who inadvertently purchase counterfeit parts expe rience many pr oblems such as lo ss o f brand r eput ation, substanda rd pe rformance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly e ncourages customers to p urchase Farichild parts e ither directly f rom Fairchild or fro m Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications f or product development. S pecifications may
change in any manner without notice.
Datasheet contains preliminary data; sup plementary dat a will be pu blished at a lat er date.
Fairchild Semiconductor reserves the right to make ch anges at any time without notice to
improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I36
©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FDD6770A Rev.C
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