Page 1
FDD6670A
(
)
N-Channel, Logic Level, PowerTrench
MOSFET
FDD6670A
February 2000
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Features
• 66 A, 30 V. R
R
DS(on)
DS(on)
= 0.008 Ω @ V
= 0.010 Ω @ V
• Low gate charge (35nC typical).
= 10 V
GS
= 4.5 V.
GS
• Fast switching speed.
Applications
• DC/DC converter
• High performance trench technology for extremely
low R
DS(on)
.
• Motor drives
D
D
G
G
S
TO-252
=25oC unless otherwise noted
T
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current -Continuous
TA = 25oC
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
C
TA = 25oC
Note 1
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
S
20 V
±
66
15
70
3.2
1.3
A
W
C
°
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6670A FDD6670A 13’’ 16mm 2500
2000 Fairchild Semiconductor Corporation
C/W
°
C/W
°
C/W
°
FDD6670A, Rev. C
Page 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
FDD6670A
Drain-Source Avalanche ratings
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Av alanche Current 66 A
Off Characteristics
BV
DSS
DSS
BV
∆
T
J
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
J
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA11.63V
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 12 A 55 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 3200 pF
Output Capacitance 820 pF
Reverse Transfer Capacitance
(Note 2)
VDD = 15 V, ID = 66 A 400 mJ
VGS = 0 V, ID = 250 µA30 V
ID = 250 µA, Referenced to 25°C25mV/
VDS = 24 V, VGS = 0 V 1
C
°
A
µ
VGS = 20V, VDS = 0 V 100 nA
VGS = -20 V, VDS = 0 V -100 nA
ID = 250 µA, Referenced to 25°C-4mV/
VGS = 10 V, ID = 15 A
V
= 10 V, ID = 15 A,TJ=125°C
GS
V
= 4.5 V, ID =13 A
GS
= 15 V, VGS = 0 V,
V
DS
0.0065
0.0090
0.0085
0.008
0.013
0.010
C
°
Ω
f = 1.0 MHz
400 pF
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 15 27 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 85 105 ns
Turn-Off Fall Time
Total Gate Charge 35 50 nC
Gate-Source Charge 9 nC
Gate-Drain Charge
= 15 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 15 V, ID = 15 A,
DS
= 5 V,
V
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratin gs
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
θJA
R
is guaranteed by design while R
θJC
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Sourc e Diode Fo rward Current 2.3 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A
(Note 2)
Voltage
is determined by the user's board design.
θCA
b) R
a) R
= 40oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
= 96oC/W when mounted
θJA
on a minimum pad .
42 68 ns
16 nC
0.72 1.2 V
FDD6670A, Rev. C
Page 3
T ypical Characteristics
T=-55oC
25oC
FDD6670A
50
40
30
20
10
, DRAIN-SOURCE CURRENT (A)
D
I
0
VGS = 10V
4.5V
3.5V
3.0V
012345
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
ID = 15A
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
2.2
2
VGS = 3.0V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
3.5V
4.0V
I
, DRAIN CURRENT (A)
D
4.5V
6.0V
10V
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.025
ID = 8 A
0.02
0.015
0.01
, ON-RESISTANCE (OHM)
0.005
DS(ON)
R
0
246810
V
, GATE TO SOU R CE VOLTAGE ( V)
GS
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
11.522.533.54
125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDD6670A, Rev. C
Page 4
Typical Characteristics (continued)
)
FDD6670A
10
ID = 15A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 10203040506070
Q
, GATE CHARGE (nC)
g
10V
VDS = 5V
15V
5000
4000
C
3000
2000
CAPACITANCE (pF)
1000
0
0 5 10 15 20 25 30
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
ISS
C
OSS
C
RSS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
R
LIMIT
DS(ON)
100
10
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A)
D
I
R
0.1
0.01
= 96 oC/W
θ
JA
T
= 25oC
A
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
100ms
1s
10s
DC
10ms
100µs
1ms
200
SINGLE PULSE
R
θ
150
JA
T
100
50
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100
t
, TIME (sec)
1
f = 1MHz
= 0 V
V
GS
= 96 °C/W
= 25°C
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) + R
θ
JA
R
= 96 °C/W
θ
JA
P(pk
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
0.0001 0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
Figure 11. T ransient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
θ
JA
(t)
θ
JA
/ t
1
2
FDD6670A, Rev. C
Page 5
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Packaging Description:
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
ESD Label
F63TNR
Label
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
TO-252 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ffe re nt siz es depe nd in g on the nu m ber of pa rts
shippe d.
D-PAK (TO-252) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (k g)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
359x359x57
5,000
0.300
1.200
F63TNR Label sample
LOT: CBVK741B019
FSID: FDD6680
D/C1: Z9942 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2500
SPEC:
N/F: F (F63TNR)3
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
6680
FDD
F
Z9935
6680
FDD
F
Z9935
D-PAK (TO-252) Unit Orientation
359mm x 359mm x 57mm
Stand a r d In termedia te box
F63TNR Label
6680
FDD
F
Z9935
ESD Label
6680
FDD
F
Z9935
Carrier Tape
Cover Tape
Trailer Tape
640mm minimum or
80 empty pockets
Components
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. A
Page 6
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier
Tape Co nfi guration: Figure 3.0
T
K0
Wc
B0
P0
D0
E1
F
W
E2
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg ty pe
TO252
(24mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
D-PAK (TO-252) Reel
Configuration: Figure 4.0
Dim A
max
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T W c T c
6.90
10.50
16.0
1.55
1.5
1.75
14.25
+/-0.10
+/-0.10
10 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
+/-0.3
+/-0.05
+/-0.10
+/-0.10
B0
7.50
min
+/-0.10
10 deg maximum
A0
Sketch B (Top View)
Component Rotation
W1 Measured at Hub
Dim N
8.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
Dim D
min
4.0
+/-0.1
2.65
0.30
+/-0.05
13.0
+/-0.3
0.9mm
maximum
+/-0.10
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
B Min
Dim C
0.06
+/-0.02
Tape Size
164mm 13" Dia
Reel
Option
DETAIL AA
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
13.00
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
330
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
July 1999, Rev. A
Page 7
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
Page 8
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not intended to be an exhaustive list of all such trademarks.
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CROSSVOLT™
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E
CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
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SyncFET™
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UHC™
VCX™
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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