Datasheet ES6U1 Datasheet (ROHM)

<MOSFET>

<Di>

<MOSFET and Di>

1.5V Drive Pch+SBD MOSFET

ES6U1

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET /

Schottky barrier diode

zFeatures

1) Pch MOSFET and schottky barrier diode
are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (1.5V drive).

4) Built-in Low V

F schottky barrier diode.

zApplication zInner circuit

Switching

zPackaging specifications

Type

ES6U1

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

WEMT6

Abbreviated symbol : U01

(6)

∗1 ESD protection diode
∗2 Body diode

(1) (2)

(6) (5) (4)

(1) (2) (3)

(5)

∗2

∗1

(4)

(3)

(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
(6) Drain

Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Channel temperature
Power dissipation W / ELEMENT0.7

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Repetitive peak reverse voltage
Reverse voltage
Forward current

Forward current surge peak
Junction temperature
Power dissipation W / ELEMENT

∗1 60Hz 1cycle
∗2 Mounted on a ceramic board

Power dissipation
Range of storage temperature

∗ Mounted on a ceramic board

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Parameter

Continuous
Pulsed
Continuous
Pulsed

Parameter

Symbol

DSS
GSS

D

DP

S

SP

P

D

Symbol

RM

R

I

F

I

FSM

Tj

P

D

Parameter Symbol

D

∗1

∗1

∗2

∗1

∗2

∗

Limits Unit

−12

±10
±1.3
±2.6

−0.5

−2.6

150

Limits Unit

25
20

0.5

2.0

150

0.5

Limits Unit

0.8

−55 to +150

VV
VV
AI
AI
AI
AI

°CTch

VV
VV
A
A

°C

W / TOTALP

°CTstg

2009.10 - Rev.A

<MOSFET>

<MOSFET> Body diode (Source-drain)

<Di>

zElectrical characteristics (Ta=25°C)

Data Sheet ES6U1

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Parameter Symbol

∗Pulsed

I

V

(BR) DSS

I

V

GS (th)

R

DS (on)

C

C
C

t

d (on)

t

d (off)

Q

Q

V

Min. Typ. Max.

GSS

−−±10 µAVGS= ±10V, VDS=0V

Unit

−12 −−VID= −1mA, VGS=0V

DSS

−−−1 µAV

−0.3 −−1.0 V V

− 190 260 I

∗

− 280 390 mΩ

mΩ

D

I

D

− 400 600 mΩ ID= −0.6A, VGS= −1.8V

− 530 1060 I

∗

Y

fs

1.4 −−SV

iss

− 290 − pF V

oss

− 2821− pF V

rss

−

∗

∗

t

r

∗

∗

t

f

∗

Q

g

∗

gs

∗

gd

8

−

10

−

30

−

9

−

2.4

−

0.6

−

0.4

−−nC

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −1.3A, VGS=0VForward voltage

mΩ

D

− pF f= 1MHz

− ns

− ns

− ns

− ns

− nC

− nC

VDD −6V

ID= −0.6A
V
R
R

V
I

D

VGS= −4.5V

Unit

Conditions

= −12V, VGS=0V

DS

= −6V, ID= −1mA

DS

= −1.3A, VGS= −4.5V
= −0.6A, VGS= −2.5V

= −0.2A, VGS= −1.5V

= −6V, ID= −1.3A

DS

= −6V

DS

= 0V

GS

GS

= −4.5V

L

10Ω

G

= 10Ω

−6V

DD

= −1.3A

R
R

L

= 10Ω

G

Conditions

4.6Ω

Parameter Symbol
Forward voltage

Reverse current

Min. Typ. Max.

F

R

I

−−

−−

−−

V

Unit

0.36 V

0.52 V
100

µA

= 0.1A

I

F

= 0.5A

I

F

V

R

= 20V

Conditions

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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.A

V

V

V

V

V

V

V

V

V

V

V

zElectrical characteristics curves

2

Ta=25°C
Pulsed

[A]

D

1.5

1

DRAIN CURRENT : -I

0.5

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig .2 Typical Output Characteristi cs(Ⅱ)

VGS= -10V
V

= -4.5

GS

VGS= -2.5

VGS= -1.8

VGS= -1.5

VGS= -1.2

2

VGS= -4.5

[A]

D

1.5

1

DRAIN CURRENT : -I

0.5

0

0246 810

VGS= -2.5
VGS= -1.8

Ta=25°C
Pulsed

VGS= -1.5

VGS= -1.2

VGS= -1.0

10

VDS= -6V
Pulsed

1

[A]

D

Ta= 125°C

Ta= 75°C

0.1
Ta= 25°C

Ta= - 25°C

0.01

DRAIN CURRENT : -I

0.001

00.511.52

GATE-SOURCE VOLTAGE : -VGS[V]

Fi g.3 T ypic al Tr ansfer C haract eris tics

Data Sheet ES6U1

10000

Ta= 25°C
Pulsed

]

Ω

1000

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -I

Fi g.4 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅰ)

10000

VGS= -1.8V
Pulsed

]

Ω

1000

(ON)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.7 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅳ)

VGS= -1.5V
V
V
V

GS

GS

GS

= -1.8V
= -2.5V
= -4.5V

D

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10000

VGS= -4.5V
Pulsed

]

Ω

1000

(ON)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

[A]

10000

]

Ω

1000

(ON)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

DRAIN-CURRENT : -ID[A]

Fi g.5 Static Drai n-Source On- State

Resi stance vs. Drai n Curr ent(Ⅱ)

VGS= -1.5V
Pulsed

0.01 0. 1 1 10

DRAIN-CURRENT : -I

Fi g.8 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅴ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

[A]

D

10000

VGS= -2.5V
Pulsed

]

Ω

1000

(ON)[m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.6 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅲ)

10

VDS= -6V
Pulsed

1

0.1

0.01 0.1 1 10

FOR WARD TR ANSFER AD MITT ANCE : |Yfs | [S]

DRAIN-CURRENT : -ID[A]

Fi g.9 F orward T ransf er Admit tance
vs. Dr ain Cur rent

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

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2009.10 - Rev.A

Data Sheet ES6U1

10

VGS=0V
Pulsed

1

0.1

REVER SE DRAIN C URREN T : -Is [A]

0.01

00.5 11.5

SOUR CE-DR AIN VOLTAGE : - VSD [V]

Fi g.10 R evers e Drai n Curr ent
vs. Sourse-Dr ain Voltage

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=-25°C

5

[V]

GS

4

3

2

1

GATE- SOURC E VOLTAGE : -V

0

00.5 11.52 2.53

TOTAL GATE CHAR GE : Qg [nC]

Fi g.13 D ynamic Input Char acteri sti cs

Ta=25°C
V
I
R
Pulsed

<Di>

100000

pulsed

10000

(A)

1000

R

100

10

1

0.1

REVERSE CURRENT : I

0.01
0 5 10 15 20 25

REVER SE VOLTAGE : VR[V]

Fig.1 Reverse Current vs. Reverse Voltage

Ta = 75

Ta = 25

Ta= - 25

= -6V

DD

= -1.3A

D

=10Ω

G

600

500

]

Ω

400

(ON)[m

DS

300

200

RESIST ANCE : R

100

STATIC DRAIN -SOUR CE ON- STATE

0

0246 810

GATE-SOUR CE VOLTAGE : -VGS[V]

Fi g.11 St atic D rain- Sourc e On-State
Resistance vs. Gate Source Voltag e

1000

100

10

CAPAC ITANCE : C [pF]

1

0.01 0.1 1 10 100

1

pulsed

℃

℃

℃

(A)

F

0.1

0.01

FORWARD CURRENT : I

0.001
0 0.1 0.2 0.3 0. 4 0.5 0. 6

Fi g.2 For ward C urrent vs. F orward Volt age

ID= -0.6A

ID= -1.3A

Coss

Crss

DR AIN-SOU RCE VOLTAGE : - V

Fi g.14 T ypic al Capac itance
vs. Drai n-Source Voltage

FOR WARD VOLTAGE : V

Ciss

Ta= 25°C
Pulsed

Ta= 25°C
f=1M Hz
V

GS

Ta = 75

Ta = 25

Ta= - 25

=0V

DS

F

1000

t

f

100

10

SWITC HING TIME : t [ns]

t

r

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.12 Swi tching Char acteri sti cs

[V]

℃

℃

℃

[V]

td(off)

td(on)

Ta=25°C

= -6V

V

DD

= -4.5V

V

GS

=10Ω

R

G

Pulsed

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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.A

F

it

V

V

%

F

it

S

m

V

Data Sheet ES6U1

zMeasurement circuits

I

V

R

G

D

GS

D.U.T.

V

DS

R

L

V

DD

ig.1-1 Switching Time Measurement Circu

GS

DS

td(on)

Fig.1-2 Switching Waveforms

Pulse Width

10%

50%

90%

ton toff

10%

tr

90%

d(off)

t

50%

10%

90

tf

V

D

I

V

I

G(Const.)

GS

D.U.T.

R

G

R

L

V

DD

ig.2-1 Gate Charge Measurement Circu

V

D

G

Q

g

GS

Q

gs

Q

gd

Charge

FIg.2-2 Gate Charge Wavefor

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V

F characteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

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2009.10 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

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© 2009 ROHM Co., Ltd. All rights reserved.

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