Datasheet 3SK318 Datasheet (HIT)

Silicon N-Channel Dual Gate MOS FET

UHF RF Amplifier

Features

• Low noise characteristics;

(NF= 1.4 dB typ. at f= 900 MHz)

• Excellent cross modulation characteristics

• Capable low voltage operation; +B= 5V

Outline

3SK318

ADE-208-600(Z)

1st. Edition

February 1998

Note: Marking is “YB–”.

CMPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK318

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate1 to source breakdown

V

(BR)G1SS

voltage
Gate2 to source breakdown

V

(BR)G2SS

voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

DS(op)

Forward transfer admittance |yfs|182432mSVDS = 3.5V, V

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

iss

oss

rss

Power gain PG 18 21 — dB VDS = 3.5V, V
Noise figure NF — 1.4 2.2 dB ID = 10mA , f = 900MHz

6 ——V I

±6——V IG1 = ±10µA, V

±6——V IG2 = ±10µA, V

——±100 nA V
——±100 nA V

0.5 0.7 1.0 V VDS = 5V, V

0.5 0.7 1.0 V VDS = 5V, V

0.5 4 10 mA VDS = 3.5V, V

1.3 1.6 1.9 pF VDS = 3.5V, V

0.9 1.2 1.5 pF ID = 10mA , f= 1MHz
— 0.019 0.03 pF

6V

±6V
±6V

20 mA

= 200µA, V

D

= ±5V, V

G1S

= ±5V, V

G2S

I

= 100µA

D

I

= 100µA

D

V

= 3V

G2S

I

= 10mA , f = 1kHz

D

G2S

G1S

G1S

G2S

G1S

G2S

G1S

= 3V

= 3V

G1S

G2S

G2S

G2S

= V

G2S

= VDS = 0

= VDS = 0

= VDS = 0
= VDS = 0

= 1.1V

= 3V

= 3V

= 3V

= 0

2

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

20

16

D

12

Drain Current I (mA)

Typical Output Characteristics

V = 1.7 V

G1S

1.6 V

1.5 V

1.4 V

8

4

0

1.3 V

1.2 V

1.1 V

1.0 V

0.9 V

246810

Drain to Source Voltage V (V)

3SK318

V = 3 V

G2S

0.8 V

DS

Drain Current vs.

Gate1 to Source Voltage

20

V = 3.5 V

DS

2.5 V

16

D

12

8

Drain Current I (mA)

4

0

12345

1.5 V

V = 1.0 V

G2S

Gate1 to Source Voltage V (V)

2.0 V

G1S

Drain Current vs.

Gate2 to Source Voltage

20

V = 3.5 V

DS

2.0 V

16

D

12

8

Drain Current I (mA)

4

0

12345

1.2 V

V = 1.0 V

G1S

Gate2 to Source Voltage V (V)

1.8 V

1.6 V

1.4 V

G2S

3

3SK318

Forward Transfer Admittance

vs. Gate1 Voltage

30

fs

24

18

12

6

V = 3.5 V

DS

V = 3 V

G2S

1.5 V

1 V

2.5 V

2 V

Forward Transfer Admittance |y | (mS)

0

0.4 0.8 1.2 1.6 2.0

Gate1 to Source Voltage V (V)

G1S

Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage

5

V = 3.5 V

DS

V = 3 V

4

G2S

f = 900 MHz

25

Power Gain vs. Drain Current

20

15

10

Power Gain PG (dB)

5

0

5 10152025
Drain Current I (mA)

25

20

V = 3.5 V

DS

V = 3 V

G2S

f = 900 MHz

D

3

2

Noise Figure NF (dB)

1

0

4

5 10152025

Drain Current I (mA)

D

15

10

Power Gain PG (dB)

5

0

246810

Drain to Source Voltage V (V)

V = 3 V

G2S

I = 10 mA

D

f = 900 MHz

DS

3SK318

Noise Figure vs. Drain to Source Voltage

5

V = 3 V

G2S

I = 10 mA

4

D

f = 900 MHz

3

2

Noise Figure NF (dB)

1

0

246810

Drain to Source Voltage V (V)

Noise Figure vs. Gate2 to Source Voltage

5

V = 3.5 V

DS

4

f = 900MHz

DS

Power Gain vs. Gate2 to Source Voltage

25

V = 3.5 V

DS

f = 900MHz

20

15

10

Power Gain PG (dB)

5

0 12345

Gate2 to Source Voltage V (V)

G2S

3

2

Noise Figure NF (dB)

1

01

23

Gate2 to Source Voltage V (V)

4

G2S

5

5

3SK318

.4

.2

0

–.2

–.4

Test Condition :

150°

180°

–150°

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

.2

.6

.4

.8

–.6

–.8

–1

V = 3.5 V , V = 3 V

DS

I = 10mA

D

1.5
2

1.5

234

1

–2

–1.5

G2S

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.002 / div.

90°

120°

–120°

–90°

V = 3.5 V , V = 3 V

DS

I = 10mA

D

50 to 1000 MHz (50 MHz step)

60°

–60°

G2S

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

120°

3

4

5

10

10

5

–10

–5

–4

–3

150°

180°

–150°

Test Condition :

–120°

–90°

V = 3.5 V , V = 3 V

DS

I = 10mA

D

60°

30°

0°

–30°

–60°

G2S

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30°

–30°

.8

.6

.4

.2

0°

0

–.2

.2

–.4

Test Condition :

.6

.4

.8

–.6

–.8

–1

V = 3.5 V , V = 3 V

DS

I = 10mA

D

50 to 1000 MHz (50 MHz step)

1.5
2

3

4

5

10

G2S

10

5

–10

–5

–4

–3

–2

1.5

234

1

–1.5

6

3SK318

Sparameter (VDS = 3.5V, V

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
50 1.000 –2.8 2.41 176.3 0.00068 89.1 0.999 –2.2
100 0.998 –5.8 2.41 171.9 0.00176 88.5 0.996 –4.5
150 0.997 –9.1 2.39 167.6 0.00223 80.7 0.996 –6.7
200 0.994 –12.2 2.38 163.7 0.00303 76.6 0.994 –8.7
250 0.994 –15.1 2.37 159.8 0.00365 79.1 0.991 –11.0
300 0.986 –18.5 2.35 155.5 0.00414 75.4 0.988 –13.2
350 0.978 –21.3 2.30 151.4 0.00484 75.0 0.983 –15.3
400 0.972 –24.1 2.28 147.6 0.00533 78.0 0.980 –17.4
450 0.969 –27.0 2.26 143.6 0.00588 71.6 0.976 –19.6
500 0.954 –29.7 2.23 140.0 0.00617 69.5 0.971 –21.7
550 0.955 –32.8 2.19 135.9 0.00666 71.5 0.966 –23.7
600 0.941 –35.7 2.17 132.2 0.00672 70.6 0.960 –25.6
650 0.932 –38.3 2.14 128.6 0.00694 69.0 0.955 –27.8
700 0.924 –41.3 2.09 125.0 0.00709 71.4 0.948 –29.9
750 0.919 –44.1 2.07 121.5 0.00689 69.0 0.942 –31.8
800 0.905 –46.9 2.03 117.9 0.00699 68.9 0.937 –33.8
850 0.896 –49.2 2.00 114.7 0.00644 74.2 0.930 –35.8
900 0.884 –52.4 1.96 110.4 0.00633 75.5 0.923 –37.6
950 0.880 –54.7 1.93 107.1 0.00585 77.8 0.917 –39.8
1000 0.866 –57.7 1.89 103.8 0.00605 82.1 0.910 –41.9

= 3V, ID = 10mA, Zo = 50Ω)

G2S

7

3SK318

Package Dimensions

2.0

1.3

0.65 0.65

3

0.3

+ 0.1
– 0.05

±0.2

Unit: mm

+ 0.1

0.16

+ 0.1

0.3

– 0.05

0.425

2

– 0.06

0.3

+ 0.1
– 0.05

±0.3

1.25

2.1

0.6

1

+ 0.1

0.4

– 0.05

0.425

4

0.65

0 to 0.1

1.25

0.2

±0.1

0.9

Hitachi Code

EIAJ

JEDEC

CMPAK-4

SC-82AB

—

8

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