Datasheet 2SK2489 Datasheet (Shindengen)

SHINDENGEN

●AbsoluteMaximumRatings（Tc=25℃）

T

-55〜150

℃

Tch150

V

180

V

V

±30

ID10

IDP20

A

IS10

I

10

A

VZ Series Power MOSFET

2SK2489

( F10S18VZ )

180V 10A

FEATURES

● Input capacitance (Ciss) is small.

Especially, input capacitance
at 0 biass is small.

● The static Rds(on) is small.

● The switching time is fast.

APPLICATION

● DC/DC converters

● Power supplies of DC 12-24V input

● Product related to

Integrated Service Digital Network

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : STO-220

(Unit : mm)

RATINGS

Item Symbol Conditions Ratings Unit

StorageTemperature
ChannelTemperature
Drain-SourceVoltage
Gate-SourceVoltage
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak)
ContinuousSourceCurrent（DC）
TotalPowerDissipation
SinglePulseAvalancheCurrent

stg

DSS
GSS

T

P

AS Tch=25℃

45 W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

●Electrical Characteristics Tc = 25℃

Item Symbol Conditions Min. Typ. Max. Unit

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

V

R

(BR)DSSID

I

DSS

VDS = 180V, VGS = 0V

I

GSS

VGS = ±30V, VDS = 0V

fs

ID = 5A, VDS = 10V

g

DS(ON)ID

THID

V

SDIS

V

θjc

Q
C
C

C

t

t

junction to case

g

VDD = 150V, VGS = 10V, ID = 10A

iss

rss

VDS = 10V, VGS = 0V, f = 1MH

oss

on

ID = 5A, VGS = 10V, RL = 20Ω

off

= 1mA, VGS = 0V

= 5A, VGS = 10V

= 1mA, VDS = 10V

= 5A, VGS = 0V

2SK2489 ( F10S18VZ )VZ Series Power MOSFET

180 V

250 μA

±0.1

3.0 7.0 S

0.170.25 Ω

2.0 3.0 4.0 V

1.5

2.77 ℃/Ｗ

25 nC

720

Z

80 pF

280

50 100 ns

140 280

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK2489 Transfer Characteristics

20

Tc = −55°C

25°C

100°C

15

[A]

D

10

Drain Current I

5

150°C

VDS = 10V
pulse test

TYP

0

0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK2489

1000

[mΩ]

DS(ON)

100

Static Drain-Source On-state Resistance

ID = 5A

Static Drain-Source On-state Resistance R

10

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP

[V]

TH

2SK2489

5

4

3

2

Gate Threshold Voltage

Gate Threshold Voltage V

1

0

-50 0 50 100 150

Case Temperature Tc [°C]

VDS = 10V
ID = 1mA
TYP

100

10

2SK2489

Safe Operating Area

[A]

D

R

DS(ON)

limit

Drain Current I

1

Tc = 25°C

Single Pulse

0.1
1 10 100

100µs

200µs

1ms

10ms

DC

180

Drain-Source Voltage VDS [V]

Transient Thermal Impedance

2

10

1

10

0

10

-1

10

Time t [s]

2SK2489

10

-2

10

-3

10

-4

1

0.1

0.01

Transient Thermal Impedance θjc(t) [°C/W]

10

0.001

10000

0.005

Tc=25°C

TYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

2SK2489

Capacitance

1000

100

Capacitance Ciss Coss Crss [pF]

10

0 20 40 60 80 100

2SK2489 Power Derating

100

80

60

40

Power Derating [%]

20

0

0 50 100 150

Case Temperature Tc [°C]

2SK2489

Gate Charge Characteristics

200

150

[V]

DS

100

50

VDD = 150V

100V

V

DS

50V

Drain-Source Voltage V

V

20

15

[V]

GS

10

GS

5

Gate-Source Voltage V

ID = 10A

0

0 10 20 30 40 50

Gate Charge Qg [nC]

0