Datasheet 2SK2212 Datasheet (HIT)

2SK2212

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC-DC converter, Moter Control

Outline

TO-220FM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SK2212

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

200 V
±20 V
10 A
40 A
10 A
30 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 3.5 6 — S ID = 5 A

Input capacitance Ciss — 1000 — pF VDS = 10 V
Output capacitance Coss — 360 — pF VGS = 0
Reverse transfer capacitance Crss — 65 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

200 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 160 V, VGS = 0

2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 0.24 0.3 Ω ID = 5 A

V

GS

V

= 10 V*

DS

= 10 V*

1

1

— 18 — ns ID = 5 A
— 80 — ns VGS = 10 V
— 65 — ns RL = 6 Ω
—50—ns
— 1.1 — V IF = 10 A, VGS = 0

— 190 — ns IF = 10 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK2212

3

2SK2212

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

20

10 V

16

D

12

8

Drain Current I (A)

4

V = 3.5 V

GS

6 V

5.5 V

5 V

4.5 V
4 V

Maximum Safe Operation Area

50
20

10

D

5
2

Operation in
this area is

1

limited by R

DC Operation (Tc = 25°C)

DS(on)

0.5

Drain Current I (A)

0.2

0.1

Ta = 25 °C

0.05

0.5

1 2 5 10 20 50 100 200 500

Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

V = 10 V

DS

Pulse Test

8

D

6

Tc = 75°C 25°C

4

Drain Current I (A)

2

10 µs

100 µs

PW = 10 ms (1shot)

1 ms

DS

–25°C

0

4 8 12 16 20

Drain to Source Voltage V (V)

DS

0

246810

Gate to Source Voltage V (V)

GS

4

2SK2212

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

5

4

DS(on)

3

Pulse Test

I = 10 A

D

2

5 A

1

2 A

Drain to Source Voltage V (V)

0

48

Gate to Source Voltage V (V)

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

1.0
V = 10 V

Ω

GS

Pulse Test

0.8

DS(on)

R ( )

0.6

I = 10 A

D

0.4

2 A

5 A

Static Drain to Source on State Resistance

vs. Drain Current

10

Ω

Pulse Test

5

DS(on)

2

R ( )

1

0.5
V = 10 V

GS

0.2

Drain to Source On State Resistance

0.1

0.5

12 51020 50

Drain Current I (A)

15 V

D

Forward Transfer Admittance vs.

10

5

Drain Current

Tc = –25 °C

25 °C

75 °C

2
1

0.5

0.2

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

V = 10 V

0.2

DS

Pulse Test

Forward Transfer Admittance |yfs| (S)

0.1

0.3 1 3 10 30 100

0.1
Drain Current I (A)

D

5

2SK2212

Body to Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

Reverse Recovery Time trr (ns)

di / dt = 100 A / µs
V = 0, Ta = 25 °C

GS

5

0.2 0.5 1 2 5 10 20
Reverse Drain Current I (A)

Dynamic Input Characteristics

500

400

DS

300

200

100

Drain to Source Voltage V (V)

V

DS

0

V = 50 V

DD

100 V
150 V

V = 150 V

DD

100 V

V

I = 15 A

D

50 V

8 16243240

Gate Charge Qg (nc)

DR

GS

Typical Capacitance vs.

Drain to Source Voltage

5000

1000

100

Capacitance C (pF)

V = 0

GS

10

f = 1 MHz

5

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

GS

500

200

20

16

100

12

50

t

8

r

20

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

10

V = 10 V, V = 30 V

GS

PW = 5 µs, duty < 1 %

5

0.2 0.5 1 2 5 10 20
Drain Current I (A)

t

d(off)

t

f

DD

Ciss

Coss

Crss

t

d(on)

DS

D

6

Reverse Drain Current vs.

Souece to Drain Voltage

20

Pulse Test

16

DR

12

8

5 V

10 V

4

V = 0, –5 V

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

2SK2212

GS

SD

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

γ

1

D = 1

Tc = 25°C

0.5

0.3

0.2

θ γ θ

0.1

0.1

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17 °C/W, Tc = 25 °C

0.05

0.03

Normalized Transient Thermal Impedance

0.01

0.02

0.01

1shot pulse

DM

PW

T

D =

P

10 µ 100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

PW

T

7

2SK2212

Switching Time Test Circuit Waveform

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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