Datasheet 2SK2202 Datasheet (HIT)

2SK2202

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for Switching regulator, DC-DC converter

ADE-208-089 A

2nd. Edition

Outline

TO-220FM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SK2202

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

120 V
±20 V
7A
14 A
7A
20 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A

Input capacitance Ciss — 420 — pF VDS = 10 V
Output capacitance Coss — 140 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

120 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 100 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.3 0.4 Ω ID = 4 A

V

GS

— 0.35 0.55 Ω ID = 4 A

V

= 4 V*

GS

V

= 10 V*

DS

—9 —nsI

= 4 A

D

= 10 V*

1

1

1

— 50 — ns VGS = 10 V
— 140 — ns RL = 7.5 Ω
—65—ns
— 1.35 — V IF = 7 A, VGS = 0

— 320 — ns IF = 7 A, VGS = 0,

di

/ dt = 50 A / µs

F

2SK2202

3

2SK2202

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10

6 V

8

D

4 V

6

Pulse Test10 V

3.5 V

Maximum Safe Operation Area

20
10

5

D

DC Operation (Tc = 25 °C)

PW = 10 ms (1shot)

1 ms

10 µs

100 µs

2

Operation in
this area is

1

limited by R

0.5

Drain Current I (A)

DS(on)

0.2
Ta = 25 °C

0.1

2 5 10 20 50 100 200

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

10

V = 10 V

8

D

6

DS

Pulse Test

4

Drain Current I (A)

2

0

246810

Drain to Source Voltage V (V)

3 V

V = 2.5 V

GS

DS

4

Tc = –25 °C

Drain Current I (A)

2

25 °C
75 °C

0 12345

Gate to Source Voltage V (V)

GS

4

2SK2202

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

1.6

DS(on)

V (V)

Pulse Test

I = 5 A

D

1.2

0.8
2 A

0.4

1 A

Drain to Source Saturation Voltage

048121620

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

1.0

Ω

Pulse Test

0.8
I = 5 A

DS(on)

R ( )

0.6

D

2 A
1 A

Static Drain to Source State Resistance

vs. Drain Current

5

Ω

Pulse Test

2

DS(on)

R ( )

1

0.5

0.2

Drain to Source On State Resistance

0.1

V = 4 V

GS

10 V

0.1 0.2 0.5 1 2 5 10 20
Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

10

V = 10 V

DS

Pulse Test

5

2

Tc = 75 °C

1

25 °C

–25 °C

0.4

0.2

V = 4 V

GS

10 V

5 A

1, 2 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

0.5

0.2

Forward Transfer Admittance |yfs| (S)

0.1

0.1

0.2 0.5 1 2 5 10
Drain Current I (A)

D

5

2SK2202

Body–Drain Diode Reverse

Recovery Time

1000

500

200
100

50

20

Reverse Recovery Time trr (ns)

di / dt = 50 A / µs, V = 0
Ta = 25 °C, Pulse Test

10

0.1 0.2 0.5 1 2 5 10
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

200

V

GS

160

DS

120

V

DS

I = 7 A

D

V = 100 V

DD

80

V = 100 V

40

DD

50 V
25 V

Drain to Source Voltage V (V)

0 8 16 24 32 40

Gate Charge Qg (nc)

GS

50 V
25 V

Typical Capacitance vs.
Drain to Source Voltage

2000

V = 0

1000

GS

f = 1 MHz

500

200
100

50

Capacitance C (pF)

20
10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

500

200

16

GS

100

12

8

50

V = 10 V

GS

V = 30 V

DD

20

PW = 2 µs
duty < 1 %

10

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

5
3

0.1 0.2 0.5 1 2 5 10
Drain Current I (A)

Coss

Crss

t

d(off)

t

t

t

d(on)

Ciss

DS

f

r

D

6

10

2SK2202

Reverse Drain Current vs.

Source to Drain Voltage

3

s (t)

1

γ

0.3

D = 1

0.5

8

Pulse Test

DR

6

4

5 V

10 V

V = 0, –5 V

2

GS

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.2

θ γ θ

0.1

0.1

ch – c(t) = s (t) • ch – c

θ

ch – c = 6.25 °C/W, Tc = 25 °C

0.05

0.03

Normalized Transient Thermal Impedance

0.01

0.02

0.01

1shot pulse

DM

PW

T

D =

P

10 µ 100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

PW

T

7

2SK2202

Switching Time Test Circuit Waveform
Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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