Low supply current: 4 μA/amplifier maximum
Single-supply operation: 2.7 V to 12 V
Wide input voltage range
Rail-to-rail output swing
Low offset voltage: 1.5 mV
No phase reversal
The OP281 and OP481 are dual and quad ultralow power
single-supply amplifiers featuring rail-to-rail outputs. Each
operates from supplies as low as 2.0 V and is specified at +3 V
and +5 V single supplies as well as ±5 V dual supplies.
Fabricated on Analog Devices’ CBCMOS process, the
OP281/OP481 feature a precision bipolar input and an output
that swings to within millivolts of the supplies, continuing to
sink or source current up to a voltage equal to the supply voltage.
Applications for these amplifiers include safety monitoring,
portable equipment, battery and power supply control, and
signal conditioning and interfacing for transducers in very low
power systems.
The output’s ability to swing rail-to-rail and not increase supply
current when the output is driven to a supply voltage enables
the OP281/OP481 to be used as comparators in very low power
systems. This is enhanced by their fast saturation recovery time.
Propagation delays are 250 μs.
The OP281/OP481 are specified over the extended industrial
temperature range (−40°C to +85°C). The OP281 dual amplifier
is available in 8-lead SOIC surface-mount and TSSOP packages.
The OP481 quad amplifier is available in narrow 14-lead SOIC
and TSSOP packages.
Operational Amplifiers
OP281/OP481
PIN CONFIGURATIONS
14
13
12
11
8
7
6
5
14
13
12
11
10
9
8
V+
OUT B
–IN B
+IN B
8
7
6
5
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
V+
OUT B
–IN B
+IN B
00291-001
00291-002
00291-003
00291-004
OUT A
1
V–
OP281
2
TOP VIEW
3
(Not to Scale)
4
–IN A
+IN A
Figure 1. 8-Lead
Narrow-Body SOIC
(R Suffix)
1
OUT A
OP281
2
–IN A
+IN A
V–
TOP VIEW
3
(Not to Scale)
4
Figure 2. 8-Lead TSSOP
(RU Suffix)
1
OUT A
2
–IN A
3
+IN A
+IN B
–IN B
OUT B
OP481
4
V+
TOP VIEW
(Not to Scale)
510
69
78
Figure 3. 14-Lead
Narrow-Body SOIC
(R Suffix)
1
OUT A
2
–IN A
3
+IN A
V+
+IN B
–IN B
OUT B
OP481
TOP VIEW
4
(Not to Scale)
5
6
7
Figure 4. 14-Lead TSSOP
(RU Suffix)
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
−40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range 0 2 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.0 V, −40°C ≤ TA ≤ +85°C 65 95 dB
Large-Signal Voltage Gain A
−40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/∆T −40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 2.925 2.96 V
Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV
Short-Circuit Limit ISC ±1.1 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3 4 μA
−40°C ≤ TA ≤ +85°C 5 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ, CL = 50 pF 25 V/ms
Turn-On Time AV = 1, VO = 1 V 40 μs
A
Saturation Recovery Time 65 μs
Gain Bandwidth Product GBP 95 kHz
Phase Margin φM 70 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
1.5 mV
OS
R
VO
= 1 MΩ, VO = 0.3 V to 2.7 V 5 13 V/mV
L
= 20, VO = 1 V 50 μs
V
Rev. D | Page 3 of 20
OP281/OP481
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
−40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB −40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS −40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range 0 4 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.0 V, −40°C ≤ TA ≤ +85°C 65 90 dB
Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = 0.5 V to 4.5 V 5 15 V/mV
−40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/ΔT −40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND, −40°C ≤ TA ≤ +85°C 4.925 4.96 V
Output Voltage Low VOL RL = 100 kΩ to V+, −40°C ≤ TA ≤ +85°C 25 75 mV
Short-Circuit Limit ISC ±3.5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V, −40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3.2 4 μA
−40°C ≤ TA ≤ +85°C 5 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 kΩ, CL = 50 pF 27 V/ms
Saturation Recovery Time 120 μs
Gain Bandwidth Product GBP 100 kHz
Phase Margin φM 74 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
0.1 1.5 mV
OS
Rev. D | Page 4 of 20
OP281/OP481
VS = ±5.0 V, TA = +25°C, unless otherwise noted.
Table 3.
Parameter Symbol Condition Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage
–40°C ≤ TA ≤ +85°C 2.5 mV
Input Bias Current IB –40°C ≤ TA ≤ +85°C 3 10 nA
Input Offset Current IOS –40°C ≤ TA ≤ +85°C 0.1 7 nA
Input Voltage Range –5 +4 V
Common-Mode Rejection CMRR VCM = –5.0 V to +4.0 V, –40°C ≤ TA ≤ +85°C 65 95 dB
Large-Signal Voltage Gain AVO RL = 1 MΩ, VO = ±4.0 V, 5 13 V/mV
–40°C ≤ TA ≤ +85°C 2 V/mV
Offset Voltage Drift ΔVOS/ΔT –40°C to +85°C 10 μV/°C
Bias Current Drift ΔIB/ΔT 20 pA/°C
Offset Current Drift ΔIOS/ΔT 2 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing VO RL = 100 kΩ to GND, –40°C ≤ TA ≤ +85°C ±4.925 ±4.98 V
Short-Circuit Limit ISC 12 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±1.35 V to ±6 V, –40°C ≤ TA ≤ +85°C 76 95 dB
Supply Current/Amplifier ISY VO = 0 V 3.3 5 μA
–40°C ≤ TA ≤ +85°C 6 μA
Voltage Noise en p-p 0.1 Hz to 10 Hz 10 μV p-p
Voltage Noise Density en f = 1 kHz 85 nV/√Hz
f = 10 kHz 75 nV/√Hz
Current Noise Density in <1 pA/√Hz
1
VOS is tested under a no load condition.
1
V
0.1 1.5 mV
OS
Rev. D | Page 5 of 20
OP281/OP481
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 16 V
Input Voltage GND to VS + 10 V
Differential Input Voltage ±3.5 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.