Analog Devices OP470GS, OP470AY, OP470FY, OP470GP, OP470EY Datasheet

Very Low Noise Quad

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a

FEATURES
Very Low-Noise, 5 nV/÷Hz @ 1 kHz Max
Excellent Input Offset Voltage, 0.4 mV Max
Low Offset Voltage Drift, 2 V/C Max
Very High Gain, 1000 V/mV Min
Outstanding CMR, 110 dB Min
Slew Rate, 2 V/s Typ
Gain-Bandwidth Product, 6 MHz Typ
Industry Standard Quad Pinouts
Available in Die Form

GENERAL DESCRIPTION

The OP470 is a high-performance monolithic quad operational
amplifier with exceptionally low voltage noise, 5 nV/X/ Hz at
1 kHz Max, offering comparable performance to ADI’s industry
standard OP27.

The OP470 features an input offset voltage below 0.4 mV,
excellent for a quad op amp, and an offset drift under 2 mV/∞C,
guaranteed over the full military temperature range. Open loop
gain of the OP470 is over 1,000,000 into a 10 kW load ensuring
excellent gain accuracy and linearity, even in high gain applica­tions. Input bias current is under 25 nA, which reduces errors
due to signal source resistance. The OP470’s CMR of over
110 dB and PSRR of less than 1.8 mV/V significantly reduce
errors due to ground noise and power supply fluctuations.
Power consumption of the quad OP470 is half that of four
OP27s, a significant advantage for power conscious applica­tions. The OP470 is unity-gain stable with a gain bandwidth
product of 6 MHz and a slew rate of 2 V/ms.

Operational Amplifier

OP470

The OP470 offers excellent amplifier matching which is important
for applications such as multiple gain blocks, low noise instrumen­tation amplifiers, quad buffers, and low noise active filters.

The OP470 conforms to the industry standard 14-pin DIP pinout.
It is pin compatible with the LM148/149, HA4741, HA5104,
and RM4156 quad op amps and can be used to upgrade systems
using these devices.

For higher speed applications, the OP471, with a slew rate of
8 V/ms, is recommended.

PIN CONNECTIONS

14–Lead Hermetic Dip

(Y–Suffix)

14–Lead Plastic Dip

(P–Suffix)

OUT A

–IN A

+IN A

+IN B

–IN B

OUT B

1

2

3

4

V+

OP470

5

6

7

14

13

12

11

10

9

8

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

16–Lead SOIC Package

(R–Suffix)

1

OUT A OUT D

2

–IN A –IN D

3

+IN A +IN D

4

V+ V–

OP470

5

+IN B +IN C

6

–IN B –IN C

7

OUT B OUT C

8

NC NC

NC = NO CONNECT

16

15

14

13

12

11

10

9

SIMPLIFIED SCHEMATIC

V+

BIAS

IN

+IN

V–

REV. A

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
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Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

OP470–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(at VS = 15 V, TA = 25C, unless otherwise noted.)

OP470A/E OP470F OP470G

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit

INPUT OFFSET
VOLTAGE V

OS

0.1 0.4 0.2 0.8 0.4 1.0 mV

INPUT OFFSET
CURRENT I

OS

VCM = 0 V 3 10 6 20 12 30 nA

INPUT BIAS
CURRENT I

B

VCM = 0 V 6 25 15 50 25 60 nA

INPUT NOISE
VOLTAGE e

np-p

0.1 Hz to 10 Hz 80 200 80 200 80 200 nVp–p
(Note 1)

INPUT NOISE f

Voltage Density e

n

= 10 Hz 3.8 6.5 3.8 6.5 3.8 6.5

O

fO = 100 Hz 3.3 5.5 3.3 5.5 3.3 5.5 nV÷Hz

1 kHz 3.2 5.0 3.2 5.0 3.2 5.0

f

O =

(Note 2)

INPUT NOISE f

Current Density i

n

= 10 Hz 1.7 1.7 1.7

O

fO = 100 Hz 0.7 0.7 0 7 pA÷Hz
fO = 1 kHz 0.4 0.4 0.4

LARGE-SIGNAL V = ±10 V

Voltage Gain A

VO

RL = 10 kW 1000 2300 800 1700 800 1700 V/mV
RL = 2 kW 500 1200 400 900 400 900

INPUT VOLTAGE
RANGE IVR (Note 3) ±11 ±12 ± 11 ±12 ±11 ± 12 V

OUTPUT VOLTAGE
SWING V

O

RL ≥ 2 kW±12 ±13 ± 12 ±13 ±12 ± 13 V

COMMON-MODE
REJECTION CMR V

= ±11 V 110 125 100 120 100 120 dB

CM

POWER SUPPLY

Rejection Ratio PSRR VS = ±4.5 V to ±18 V 0.56 1.8 1.0 5.6 1.0 5.6 mV/V

SLEW RATE SR 1.4 2 1.4 2 1.4 2 V/ms

SUPPLY CURRENT

(All Amplifiers) I

SY

No Load 9 11911911mA

GAIN BANDWIDTH
PRODUCT GBW AV = 10 666MHz

CHANNEL
SEPARATION CS VO = 20 V

p-p

125 155 125 155 125 155 dB

fO = 10 Hz (Note 1)

INPUT
CAPACITANCE C

INPUT RESISTANCE R

IN

IN

222pF

0.4 0.4 0.4 MW

Differential-Mode

INPUT RESISTANCE

Common-Mode R

SETTLING TIME t

INCM

S

= 1

A

V

to 0.1% 5.5 5.5 5.5 ms

11 11 11 GW

to 0.01 % 6.0 6.0 6.0

NOTES

1

Guaranteed but not 100% tested

2

Sample tested

3

Guaranteed by CMR test

–2–

REV. A

OP470

ELECTRICAL CHARACTERISTICS

(at VS = 15 V, –55C £ TA £ 125C for OP470A, unless otherwise noted.)

OP470A

Parameter Symbol Conditions Min Typ Max Unit

INPUT OFFSET VOLTAGE V

OS

0.14 0.6 mV

AVERAGE INPUT

Offset Voltage Drift TCV

INPUT OFFSET CURRENT I

INPUT BIAS CURRENT I

OS

OS

B

LARGE-SIGNAL V

Voltage Gain A

VO

VCM = 0 V 5 20 nA

VCM = 0 V 15 20 nA

= ±10 V

O

RL = 10 kW 750 1600 V/mV

0.4 2 mV/∞C

RL = 2 kW 400 800

INPUT VOLTAGE RANGE*IVR ±11 ±12 V

OUTPUT VOLTAGE SWING V

O

RL ≥ 2 kW±12 ±13 V

COMMON-MODE
REJECTION CMR V

= ±11 V 100 120 dB

CM

POWER SUPPLY
REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 1.0 5.6 mV/V

SUPPLY CURRENT

(All Amplifiers) I

NOTE

*

Guaranteed by CMR test

SY

No Load — 9.2 11 mA

(at Vs = 15 V, –25C £ TA £ 85C for OP470E/OP470EF, –40C £ TA £ 85C for OP470G,

ELECTRICAL CHARACTERISTICS

unless otherwise noted.)

OP470E OP470F OP470G

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit

INPUT OFFSET
VOLTAGE V

OS

0.12 0.5 0.24 1.0 0.5 1.5 mV

AVERAGE INPUT

Offset Voltage Drift TCV

OS

0.4 2 0.6 4 2 mV/∞C

INPUT OFFSET
CURRENT I

OS

VCM = 0 V 4 20 7 40 20 50 nA

INPUT BIAS
CURRENT I

B

LARGE-SIGNAL V

Voltage Gain A

VO

VCM = 0 V 11 50 2070 4075 nA

= ±10 V

O

RL = 10 kW 800 1800 600 1400 600 1500 V/mV
RL = 2 kW 400 900 300 700 300 800

INPUT VOLTAGE
RANGE

*

IVR ±11 ±12 ± 11 ±12 ±11 ± 12 V

OUTPUT VOLTAGE
SWING V

O

RL ≥ 2 kW±12 ±13 ± 12 ±13 ±12 ± 13 V

COMMON-MODE
REJECTION CMR V

POWER SUPPLY PSRR V

= ±11 V 100 120 90 115 90 110 dB

CM

= ±4.5 V to ±18 V 0.7 5.6 1.8 10 1.8 10 mV/V

S

Rejection Ratio

SUPPLY CURRENT

(All Amplifiers) I

NOTE

*

Guaranteed by CMR test

SY

No Load — 9.2 11 — 9.2 11 — 9.3 11 mA

REV. A

–3–

OP470–SPECIFICATIONS

WAFER TEST LIMITS

(at Vs = 15 V, 25C, unless otherwise noted.)

OP470GBC

Parameter Symbol Conditions Limit Unit

INPUT OFFSET VOLTAGE V

INPUT OFFSET CURRENT I

INPUT BIAS CURRENT I

OS

OS

B

LARGE-SIGNAL V

Voltage Gain A

VO

VCM = 0 V 20 nA MAX

VCM = 0 V 50 nA MIN

= ±10 V

O

RL = 10 kW 800 V/mV MIN

0.8 mV MAX

RL = 2 kW 400

INPUT VOLTAGE RANGE*IVR ±11 V MIN

OUTPUT VOLTAGE SWING V

O

RL ≥ 2 kW±12 V MIN

COMMON-MODE
REJECTION CMR V

= ±11 V 100 dB

CM

POWER SUPPLY
REJECTION RATIO PSRR VS = ±4.5 V to ±18 V 5.6 mV/V MAX

SUPPLY CURRENT

(All Amplifiers) I

NOTE

*

Guaranteed by CMR test

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaran­teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

SY

No Load 11 mA MAX

–4–

REV. A

OP470

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

Differential Input Voltage
Differential Input Current

2

. . . . . . . . . . . . . . . . . . . . . . ±1.0 V

2

. . . . . . . . . . . . . . . . . . . . ±25 mA

1

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

Output Short-Circuit Duration . . . . . . . . . . . . . . . Continuous

Storage Temperature Range

P, Y Package . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300∞C

Junction Temperature (T

) . . . . . . . . . . . . . –65∞C to +150∞C

j

Operating Temperature Range

OP470A . . . . . . . . . . . . . . . . . . . . . . . . . –55∞C to +125∞C

OP470E, OP470F . . . . . . . . . . . . . . . . . . . –25∞C to +85∞C

OP470G . . . . . . . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C

ORDERING GUIDE

Package Options

TA = 25∞C Operating

MAX Cerdip Temperature

V

OS

(V) 14-Pin Plastic Range

400 MIL
400 OP470AY* MIL
400 OP470EY IND
800 OP470FY* IND
1000 OP470GP XIND
1000 OP470GS XIND

*Not for new design; obsolete April 2002.

For military processed devices, please refer to the standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp

SMD Part Number ADI Equivalent

59628856501CA OP470AYMDA
596288565012A OP470ARCMDA
596288565013A

*

Not for new designs; obsolete April 2002.

*

OP470ATCMDA

Package Type 

3

jA



jc

Unit

14-Lead Hermetic DIP(Y) 94 10 ∞C/W

14-Lead Plastic DiP(P) 76 33 ∞C/W

16-Lead SOL (S) 88 23 ∞C/W

NOTES

1

Absolute Maximum Ratings apply to both DICE and packaged parts, unless

otherwise noted.

2

The OP470’s inputs are protected by back-to-back diodes. Current limiting

resistors are not used in order to achieve low noise performance. If differential
voltage exceeds ±1.0 V, the input current should be limited to ± 25 mA.

3



is specified for worst case mounting conditions, i.e., jA is specified for device

jA

in socket for TO, CerDIP, PDIP, packages; jA is specified for device soldered to
printed circuit board for SO packages.

–IN B

OUT B

OUT C

+IN B

–IN C

+IN C V– +IN D

DIE SIZE 0.163  0.106 INCH, 17,278 SQ. mm

(4.14  2.69 mm, 11.14 SQ. mm)

+IN AV+

–IN A

OUT A

OUT D

–IN D

Figure 1. Dice Characteristics

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP470 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

REV. A

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