Analog Devices OP450, OP250 Datasheet

OP250

OUT A

–IN A

+IN A

V–

OUT B

–IN B

+IN B

V+

1

2

3

4

8

7

6

5

(Not to Scale)
–IN A
+IN A

V–

OUT B
–IN B
+IN B

V+

1

4

5

8

OUT A

OP250

OUT A

–IN A
+IN A

V+

–IN D
+IN D
V–

OUT D1
2
3
4

14
13
12

11
+IN B
–IN B

OUT B

–IN C
OUT C

+IN C5
6
7

10

9
8

OP450

(Not to Scale)

AD8532

OUT A

–IN A
+IN A

V+

–IN D
+IN D
V–

OUT D

1

14

+IN B
–IN B

OUT B

–IN C
OUT C

+IN C

78

OP450

1

14

78

CMOS Single-Supply Rail-to-Rail

a

Input/Output Operational Amplifiers

FEATURES
Single-Supply Operation: 2.7 V to 6 V
High Output Current: 6100 mA
Low Supply Current: 800 mA/Amp
Wide Bandwidth: 1 MHz
Slew Rate: 2.2 V/ms
No Phase Reversal
Low Input Currents
Unity Gain Stable

APPLICATIONS
Battery Powered Instrumentation
Medical
Remote Sensors
ASIC Input or Output Amplifier
Automotive

GENERAL DESCRIPTION

The OP250 and OP450 are dual and quad CMOS single-supply,
amplifiers featuring rail-to-rail inputs and outputs. Both are guar­anteed to operate from a +2.7 V to +5 V single supply.

These amplifiers have very low input bias currents. Outputs are
capable of driving 100 mA loads and are stable with capacitive
loads. Supply current is less than 1 mA per amplifier.

Applications for these amplifiers include portable medical
equipment, safety and security, and interface to transducers
with high output impedance.

The ability to swing rail-to-rail at both the input and output en­ables designers to build multistage filters in single-supply sys­tems and maintain high signal-to-noise ratios.

The OP250 and OP450 are specified over the extended indus­trial (–40°C to +125°C) temperature range. The OP250, dual,
is available in 8-lead TSSOP and SO surface mount packages.
The OP450, quad, is available in 14-lead thin shrink small out­line (TSSOP) and narrow 14-lead SO packages.

OP250/OP450

PIN CONFIGURATIONS

8-Lead Narrow Body SO

(SO-8)

8-Lead TSSOP

(RU-8)

14-Lead Narrow Body SO

(N-14)

14-Lead TSSOP

(RU-14)

REV. 0

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1997

OP250/OP450–SPECIFICA TIONS

ELECTRICAL CHARACTERISTICS

(V

= 13.0 V, TA = 1258C, VCM = 1.5 V unless otherwise noted)

S

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I

Input Offset Current I

B

OS

OS

–40°C < T
–40°C < T

–40°C < T
–40°C < T

< +125°C20mV

A

< +85°C60pA

A

< +125°C 500 pA

A

< +125°C60pA

A

8mV

240 pA

0.5 25 pA

Input Voltage Range 03V
Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A
Offset Voltage Drift ∆V
Bias Current Drift ∆I

VO

/∆T10µV/°C

OS

/∆T 1.8 pA/°C

B

= 0 V to 3 V 40 55 dB

CM

–40°C < T

< +125°C35 dB

A

RL = 2 kΩ , VO = 0.3 V to 2.7 V 800 V/mV

Offset Current Drift ∆IOS/∆T 0.07 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

IL = 100 µA 2.99 V
I

= 10 mA 2.85 2.94 V

L

–40°C to +125°C 2.8 V

Output Voltage Low V

OL

IL = 100 µA1mV
I

= 10 mA 55 100 mV

L

–40°C to +125°C 125 mV
Output Current I
Open Loop Impedance Z

OUT

OUT

f = 1 MHz, AV = 1 180 Ω

100 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I

SY

= 2.7 V to 6 V 60 80 dB

S

–40°C < T

< +125°C55 dB

A

VO = 0 V 700 1,000 µA

–40°C < TA < +125°C 1,250 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 1.9 V/µs

L

To 0.01% 4 µs
Gain Bandwidth Product GBP 0.95 MHz
Phase Margin Øo 46 Degrees
Channel Separation CS f = 1 kHz, RL = 10 kΩ 100 dB

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e

n
n

p–p

0.1 Hz to 10 Hz 10 µV

f = 1 kHz 45 nV/√Hz

p–p

f = 10 kHz 30 nV/√
Current Noise Density i

Specifications subject to change without notice.

n

f = 1 kHz 0.05 pA/√Hz

Hz

–2–

REV. 0

OP250/OP450

ELECTRICAL CHARACTERISTICS

(V

= 15.0 V, TA = 1258C, VCM =2.5 V unless otherwise noted)

S

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I

Input Offset Current I

B

OS

OS

–40°C < T
–40°C < T

–40°C < T
–40°C < T

< +125°C20mV

A

< +85°C60pA

A

< +125°C 500 pA

A

< +125°C60pA

A

2 7.5 mV
240 pA

0.5 25 pA

Input Voltage Range 05V
Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A
Offset Voltage Drift ∆V
Bias Current Drift ∆I

VO

/∆T –40°C < TA < +125°C10µV/°C

OS

/∆T 1.8 pA/°C

B

= 0 V to 5 V 45 60 dB

CM

–40°C < T

< +125°C40 dB

A

RL = 2 kΩ , Vo = 0.3 V to 4.7 V 1,000 V/mV

Offset Current Drift ∆IOS/∆T 0.07 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

IL = 100 µA 4.99 V
I

= 10 mA 4.9 4.94 V

L

–40°C to +125°CmV

Output Voltage Low V

OL

IL = 100 µA1V
I

= 10 mA 40 100 mV

L

–40°C to +125°C 125 mV
Output Current I
Open Loop Impedance Z

OUT

OUT

f =1 MHz, AV = 1 200 Ω

±100 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I

SY

= 2.7 V to 6 V 60 80 dB

S

–40°C < T

< +125°C55 dB

A

VO = 0 V 800 1,250 µA

–40°C < TA < +125°C 750 1,750 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Full-Power Bandwidth BW
Settling Time t

P

S

= 10 kΩ 2.2 V/µs

L

1% Distortion 100 kHz

To 0.01% 3 µs
Gain Bandwidth Product GBP 1 MHz
Phase Margin Øo 48 Degrees
Channel Separation CS f = 1 kHz, RL = 10 kΩ 100 dB

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e

n
n

p–p

0.1 Hz to 10 Hz 10 µV

f = 1 kHz 45 nV/√Hz

p–p

f = 10 kHz 30 nV/√
Current Noise Density i

Specifications subject to change without notice.

n

f = 1 kHz 0.05 pA/√Hz

Hz

REV. 0

–3–

OP250/OP450

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 V

Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V

Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . ±6 V

Output Short-Circuit

Duration to GND . . . . . . . . . . . . . Observe Derating Curves

ESD Susceptibility. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V

Storage Temperature Range

S, RU Package . . . . . . . . . . . . . . . . . . . . . 265°C to +150°C

Operating Temperature Range

1, 2

Package Type u

8-Lead SOIC (S) 158 43 °C/W

S

8-Lead TSSOP (RU) 240 43 °C/W
14-Lead SOIC (N) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

*θJA is specified for the worst case conditions, i.e., θ

in circuit board for surface mount packages.

ORDERING GUIDE

OP250G/OP450G . . . . . . . . . . . . . . . . . . 240°C to +125°C

Junction Temperature Range

S, RU Package . . . . . . . . . . . . . . . . . . . . . 265°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C

NOTES

1

Absolute maximum ratings apply at +25°C, unless otherwise noted.

2

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

Model Range Description Options

OP250GS –40°C to +125°C 8-Lead SOIC SO-8
OP250GRU –40°C to +125°C 8-Lead TSSOP RU-8
OP450GS –40°C to +125°C 14-Lead SOIC N-14
OP450GRU –40°C to +125°C 14-Lead TSSOP RU-14

Temperature Package Package

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP250/OP450 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

*

JA

u

JC

specified for device soldered

JA

Units

–4–

REV. 0

T ypical Performance Characteristics–OP250/OP450

10k

VS = +2.7V

= +25 C

T

A

1k

100

10

OUTPUT VOLTAGE – mV

1

0.1

0.001 1000.01

0.1 1 10

LOAD CURRENT – mA

SOURCE

SINK

Figure 1. Output Voltage to Supply Rail vs. Load Current

1k

VS = +5V

= +25 C

T

A

100

10

SOURCE

SINK

0.9
TA = +25 C

0.8

0.7

0.6

0.5

0.4

0.3

0.2

SUPPLY CURRENT / AMPLIFIER – mA

0.1

0

0.75 31

1.25 1.5 1.75 2 2.25 2.5 2.75
SUPPLY VOLTAGE – V

Figure 4. Supply Current per Amplifier vs. Supply Voltage

1

VS = +5V
V

= +2.5V

CM

0.5

0

OUTPUT VOLTAGE – mV

1

0.1

0.001 1000.01

0.1 1 10

LOAD CURRENT – mA

Figure 2. Output Voltage to Supply Rail vs. Load Current

0.85

0.8

0.75

0.7

SUPPLY CURRENT / AMPLIFIER – mA

0.65
–55 145–5

–35 –15 45 85 125

25 65 105

TEMPERATURE – C

VS = +5V

VS = +3V

Figure 3. Supply Current per Amplifier vs. Temperature

–0.5

INPUT OFFSET VOLTAGE – mV

–1

–55 145–5

–35 –15 45 85 125

25 65 105

TEMPERATURE – C

Figure 5. Input Offset Voltage vs. Temperature

400

VS = +5V, +3V
V

= VS/2

CM

300

200

100

INPUT BIAS CURRENT – pA

0
–55 145–5

–35 –15 45 85 125

25 65 105

TEMPERATURE – C

Figure 6. Input Bias Current vs. Temperature

REV. 0

–5–