FEATURES
Low Offset Voltage: 60 V Max
Very Low Offset Voltage Drift: 0.7 V/ⴗC Max
Low Input Bias Current: 2 nA Max
√
Low Noise: 8 nV/
CMRR, PSRR, and A
Low Supply Current: 400 A/Amp
Dual Supply Operation: ⴞ2.5 V to ⴞ15 V
Unity Gain Stable
No Phase Reversal
Inputs Internally Protected Beyond Supply Voltage
APPLICATIONS
Wireless Base Station Control Circuits
Optical Network Control Circuits
Instrumentation
Sensors and Controls
Thermocouples
RTDs
Strain Bridges
Shunt Current Measurements
Precision Filters
Hz
> 120 dB Min
VO
Bias Current Operational Amplifiers
OP1177/OP2177/OP4177
FUNCTIONAL BLOCK DIAGRAM
8-Lead MSOP
(RM-Suffix)
1
NC
ⴚIN
OP1177
ⴙIN
Vⴚ
45
NC = NO CONNECT
8-Lead MSOP
(RM-Suffix)
8
NC
V+
OUT
NC
8-Lead SOIC
(R-Suffix)
NC
1
ⴚIN
2
+IN
3
Vⴚ
4
NC = NO CONNECT
8-Lead SOIC
(R-Suffix)
OUT A
1
ⴚIN A
2
3
+IN A
4
Vⴚ
OP1177
OP2177
NC
8
V+
7
OUT
6
NC
5
V+
8
7
OUT B
6
ⴚIN B
+IN B
5
GENERAL DESCRIPTION
The OPx177 family consists of very high-precision, single, dual,
and quad amplifiers featuring extremely low offset voltage and
drift, low input bias current, low noise, and low power consumption. Outputs are stable with capacitive loads of over
1,000 pF with no external compensation. Supply current is less
than 500 µA per amplifier at 30 V. Internal 500 Ω series resis-
tors protect the inputs, allowing input signal levels several volts
beyond either supply without phase reversal.
Unlike previous high-voltage amplifiers with very low offset voltages, the
OP1177 and OP2177 are available in the tiny MSOP 8-lead surface-mount package, while the OP4177 is available in TSSOP14.
Moreover, specified performance in the MSOP/TSSOP package is
identical to performance in the SOIC package.
OPx177 family offers the widest specified temperature range of
any high-precision amplifier in surface-mount packaging. All
versions are fully specified for operation from –40°C to +125°C for
the most demanding operating environments.
Applications for these amplifiers include precision diode power
measurement, voltage and current level setting, and level detection in optical and wireless transmission systems. Additional
applications include line powered and portable instrumentation
14-Lead TSSOP
(RU-Suffix)
OUT A
–IN A
+IN A
+IN B
–IN B
OUT B
1
OP4177
V+
7
OUT D
14
–IN D
+IN D
V–
+IN C
–IN C
8
OUT C
OUT A
ⴚIN A
+IN A
+IN B
ⴚIN B
OUT B
1
2
3
4
V+
5
6
7
14-Lead SOIC
(R-Suffix)
OP4177
OP4177
OUT D
14
ⴚIN D
13
+IN D
12
Vⴚ
11
+IN C
10
9
ⴚIN C
8
OUT C
and controls—thermocouple, RTD, strain-bridge, and other
sensor signal conditioning—and precision filters.
The OP1177 (single) and the OP2177 (dual) amplifiers are
available in the 8-lead MSOP and 8-lead SOIC packages. The
OP4177 (quad) is available in 14-lead narrow SOIC and 14-lead
TSSOP packages. MSOP and TSSOP packages are available in
tape and reel only.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
–40°C < TA < +125°C25100µV
–40°C < TA < +125°C25120µV
–40°C < TA < +125°C–2+0.5+2nA
–40°C < TA < +125°C–1+0.2+1nA
1560µV
1575µV
Input Voltage Range–3.5+3.5V
Common-Mode Rejection RatioCMRRV
Large Signal Voltage GainA
VO
= –3.5 V to +3.5 V120126dB
CM
–40°C < T
< +125°C118125dB
A
RL = 2 kΩ , VO = –3.5 V to +3.5 V1,0002,000V/mV
Offset Voltage Drift
OP1177/OP2177∆V
/∆T–40°C < TA < +125°C0.20.7µV/°C
OS
OP4177∆VOS/∆T–40°C < TA < +125°C0.30.9µV/°C
OUTPUT CHARACTERISTICS
Output Voltage HighV
Output Voltage LowV
Output CurrentI
OH
OL
OUT
IL = 1 mA, –40°C < TA < +125°C+4+4.1V
IL = 1 mA, –40°C < TA < +125°C–4.1–4V
V
DROPOUT
< 1.2 V±10mA
POWER SUPPLY
Power Supply Rejection Ratio
OP1177PSRRV
OP2177/OP4177PSRRV
Supply Current/AmplifierI
SY
= ±2.5 V to ±15 V,120130dB
S
–40°C < T
= ±2.5 V to ±15 V,118121dB
S
–40°C < T
< +125°C115125dB
A
< +125°C114120dB
A
VO = 0 V400500µA
–40°C < TA < +125°C500600µA
DYNAMIC PERFORMANCE
Slew RateSRR
= 2 kΩ0.7V/µs
L
Gain Bandwidth ProductGBP1.3MHz
NOISE PERFORMANCE
Voltage Noiseen p-p0.1 Hz to 10 Hz0.4µV p-p
Voltage Noise Densitye
Current Noise Densityi
n
n
f = 1 kHz7.98.5nV/√Hz
f = 1 kHz0.2pA/√Hz
MULTIPLE AMPLIFIERS
CHANNEL SEPARATIONC
S
DC0.01µV/V
f = 100 kHz–120dB
*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically
low estimates for parameters that can have both positive and negative values.
Specifications subject to change without notice.
–2–
REV. B
OP1177/OP2177/OP4177
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, VCM = 0 V, TA = 25ⴗC, unless otherwise noted.)
Parameter SymbolConditionsMinTyp*MaxUnit
INPUT CHARACTERISTICS
Offset Voltage
OP1177V
OP2177/OP4177V
OP1177/OP2177V
OP4177V
Input Bias CurrentI
Input Offset CurrentI
B
OS
OS
OS
OS
OS
–40°C < TA < +125°C25100µV
–40°C < TA < +125°C25120µV
–40°C < TA < +125°C–2+0.5+2nA
–40°C < TA < +125°C–1+0.2+1nA
1560µV
1575µV
Input Voltage Range–13.5+13.5V
Common-Mode Rejection RatioCMRRV
Large Signal Voltage GainA
VO
= –13.5 V to +13.5 V
CM
–40°C < T
< +125°C120125dB
A
RL = 2 kΩ , VO = –13.5 V to +13.5 V1,0003,000V/mV
Offset Voltage Drift
OP1177/OP2177∆V
/∆T–40°C < TA < +125°C0.20.7µV/°C
OS
OP4177∆VOS/∆T–40°C < TA < +125°C0.30.9µV/°C
OUTPUT CHARACTERISTICS
Output Voltage HighV
Output Voltage LowV
Output CurrentI
Short Circuit CurrentI
OH
OL
OUT
SC
IL = 1 mA, –40°C < TA < +125°C+14+14.1V
IL = 1 mA, –40°C < TA < +125°C–14.1–14V
V
DROPOUT
< 1.2 V±10mA
±35mA
POWER SUPPLY
Power Supply Rejection Ratio
OP1177PSRRV
OP2177/OP4177PSRRV
Supply Current/AmplifierI
SY
= ±2.5 V to ±15 V,120130dB
S
–40°C < T
= ±2.5 V to ±15 V,118121dB
S
–40°C < T
< +125°C115125dB
A
< +125°C114120dB
A
VO = 0 V400500µA
–40°C < TA < +125°C500600µA
DYNAMIC PERFORMANCE
Slew RateSRRL = 2 kΩ0.7V/µs
Gain Bandwidth ProductGBP1.3MHz
NOISE PERFORMANCE
Voltage Noiseen p-p0.1 Hz to 10 Hz0.4µV p-p
Voltage Noise Densitye
Current Noise Densityi
n
n
f = 1 kHz7.98.5nV/√Hz
f = 1 kHz0.2pA/√Hz
MULTIPLE AMPLIFIERS
CHANNEL SEPARATIONC
S
DC0.01µV/V
f = 100 kHz–120dB
*Typical values cover all parts within one standard deviation of the average value. Average values, given in many competitors ’ data sheets as “typical,” give unrealistically
low estimates for parameters that can have both positive and negative values.
R, RM, and RU Packages . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING GUIDE
TemperaturePackagePackageBranding
ModelRangeDescriptionOptionInformation
OP1177ARM–40°C to +125°C8-Lead MINI_SOICRM-8AZA
OP1177AR–40°C to +125°C8-Lead SOICSO-8
OP2177ARM–40°C to +125°C8-Lead MINI_SOICRM-8B2A
OP2177AR–40°C to +125°C8-Lead SOICSO-8
OP4177AR–40°C to +125°C14-Lead SOICR-14
OP4177ARU–40°C to +125°C14-Lead TSSOPRU-14
θJA is specified for worst-case conditions, i.e., θ
in circuit board for surface-mount packages.
2
MSOP is only available in tape and reel.
is specified for device soldered
JA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP1177/OP2177/OP4177 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. B
Typical Performance Characteristics–
OP1177/OP2177/OP4177
50
VSY = ⴞ15V
45
40
35
30
25
20
15
NUMBER OF AMPLIFIERS
10
5
0
ⴚ30 ⴚ20 ⴚ10
ⴚ40
INPUT OFFSET VOLTAGE – V
02030
10
40
TPC 1. Input Offset Voltage
Distribution
1.8
VSY = ⴞ15V
1.6
T
= 25ⴗC
A
1.4
1.2
1.0
SOURCE
0.8
0.6
⌬OUTPUT VOLTAGE – V
0.4
0.2
SINK
0
0.0010.0110
0.11
LOAD CURRENT – mA
TPC 4. Output Voltage to Supply
Rail vs. Load Current
90
80
70
60
50
40
30
20
NUMBER OF AMPLIFIERS
10
0
0.05
0.15 0.25 0.35
TCVOS – V/ⴗC
VSY = ⴞ15V
0.45 0.55
TPC 2. Input Offset Voltage
Drift Distribution
INPUT BIAS CURRENT – nA
ⴚ1
ⴚ2
ⴚ3
3
2
1
0
ⴚ50
050100
TEMPERATURE – ⴗC
VSY = ⴞ15V
TPC 5. Input Bias Current vs.
Temperature
150
140
VSY = ⴞ15V
120
100
80
60
40
NUMBER OF AMPLIFIERS
20
0
0.1 0.2 0.30.5
00.4
INPUT BIAS CURRENT – nA
0.6
0.7
TPC 3. Input Bias Current
Distribution
60
50
40
30
GAIN
20
10
OPEN-LOOP GAIN – dB
0
ⴚ10
ⴚ20
100k1M10M
FREQUENCY – Hz
VSY = ⴞ15V
= 0
C
L
=
R
L
PHASE
TPC 6. Open-Loop Gain and
Phase Shift vs. Frequency
0
45
90
135
180
PHASE SHIFT – Degrees
120
100
80
60
= 100
A
V
40
AV = 10
20
0
AV = 1
ⴚ20
CLOSED-LOOP GAIN – dB
ⴚ40
ⴚ60
ⴚ80
1k10k100M
100k1M10M
FREQUENCY – Hz
VSY = ⴞ15V
= 4mV p-p
V
IN
= 0
C
L
=
R
L
TPC 7. Closed-Loop Gain vs.
Frequency
500
450
400
350
300
250
200
150
OUTPUT IMPEDANCE – ⍀
100
50
0
1001k10k
A
FREQUENCY – Hz
= 100
V
AV = 10
VSY = ⴞ15V
= 50mV p-p
V
IN
AV = 1
100k1M
TPC 8. Output Impedance vs.
Frequency
VSY = ⴞ15V
C
= 300pF
L
= 2k⍀
R
L
= 4V
V
IN
A
= 1
V
VOLTAGE – 1V/DIV
GND
TIME – 100s/DIV
TPC 9. Large Signal Transient
Response
REV. B
–5–
OP1177/OP2177/OP4177
k
VSY = ⴞ15V
C
= 1,000pF
L
= 2k⍀
R
L
= 100mV
V
IN
A
= 1
V
GND
VOLTAGE – 100mV/DIV
TIME – 100s/DIV
TPC 10. Small Signal Transient
Response
15V
0V
OUTPUT
VSY = ⴞ15V
= 10k⍀
R
L
A
= ⴚ100
V
= 200mV
V
IN
0V
50
VSY = ⴞ15V
45
R
= 2k⍀
L
= 100mV p-p
V
IN
40
35
30
25
20
15
10
SMALL SIGNAL OVERSHOOT – %
5
0
11010
CAPACITANCE – pF
100
+OS
ⴚOS
1k
TPC 11. Small Signal Overshoot vs.
Load Capacitance
CMRR – dB
140
120
100
80
60
40
VSY = ⴞ15V
VSY = ⴞ15V
= 10k⍀
R
L
= ⴚ100
A
V
V
= 200mV
0V
IN
ⴚ15V
OUTPUT
+200mV
0V
INPUT
TIME – 10s/DIV
TPC 12. Positive Overvoltage
Recovery
PSRR – dB
140
120
100
80
60
40
+PSRR
VSY = ⴞ15V
ⴚPSRR
ⴚ200mV
INPUT
TIME – 4s/DIV
TPC 13. Negative Overvoltage
Recovery
VSY = ⴞ15V
– 0.2V/DIV
NOISE
V
TIME – 1s/DIV
TPC 16. 0.1 Hz to 10 Hz Input
Voltage Noise
20
0
1001k100k1M
1010k10M
FREQUENCY – Hz
TPC 14. CMRR vs. Frequency
18
VSY = ⴞ15V
16
14
12
10
8
6
4
VOLTAGE NOISE DENSITY – nV/ Hz
2
025050100150200
FREQUENCY – Hz
TPC 17. Voltage Noise Density
20
0
1001k100k1M
1010k10M
FREQUENCY – Hz
TPC 15. PSRR vs. Frequency
SHORT CIRCUIT CURRENT – mA
35
30
25
20
15
10
5
0
ⴚ50
ⴙI
SC
ⴚI
SC
050100
TEMPERATURE – ⴗC
V
SY
= ⴞ15V
TPC 18. Short Circuit Current vs.
Temperature
150
–6–
REV. B
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