Low Drift, 0.2 V/C
High Speed, 17 V/s Slew Rate
63 MHz Gain Bandwidth
Low Input Offset Voltage, 10 V
Excellent CMRR, 126 dB (Common-Voltage @ 11 V)
High Open-Loop Gain, 1.8 Million
Replaces 725, OP-07, SE5534 In Gains > 5
Available in Die Form
GENERAL DESCRIPTION
The OP37 provides the same high performance as the OP27,
but the design is optimized for circuits with gains greater than
five. This design change increases slew rate to 17 V/ms and
gain-bandwidth product to 63 MHz.
The OP37 provides the low offset and drift of the OP07
plus higher speed and lower noise. Offsets down to 25 mV and
a
3.5 nV/ @ 10 Hz), a low 1/f noise corner frequency of
n
2.7 Hz,
and the high gain of 1.8 million, allow accurate
high-gain amplification of low-level signals.
The low input bias current of 10 nA and offset current of 7 nA
are achieved by using a bias-current cancellation circuit.
the military temperature range this typically holds I
to 20 nA and 15 nA respectively.
of 0.6 mV/∞C make the OP37 ideal for preci-
Over
and I
B
OS
Operational Amplifier (A
VCL
> 5)
OP37
The output stage has good load driving capability. A guaranteed
swing of 10 V into 600 W and low output distortion make the
OP37 an excellent choice for professional audio applications.
PSRR and CMRR exceed 120 dB. These characteristics, coupled
with long-term drift of 0.2 mV/month, allow the circuit
to achieve performance levels previously attained only by
discrete designs.
Low-cost, high-volume production of the OP37 is achieved
using on-chip zener-zap trimming. This reliable and stable
trimming scheme has proved its effectiveness over many
production history.
The OP37 brings low-noise instrumentation-type performance
such diverse applications as microphone, tapehead, and RIAA
phono preamplifiers, high-speed signal conditioning for data
acquisition systems, and wide-bandwidth instrumentation.
PIN CONNECTIONS
8-Lead Hermetic DIP
(Z Suffix)
Epoxy Mini-DIP
(P Suffix)
8-Lead SO
(S Suffix)
designer
by
offset
years of
to
SIMPLIFIED SCHEMATIC
NON-INVERTING
INPUT (+)
INVERTING
INPUT (–)
R1 AND R2 ARE PERMANENTLY
*
ADJUSTED AT WAFER TEST FOR
MINIMUM OFFSET VOLTAGE.
Q6
Q3
R1*
R3
18
ADJ.
V
OS
Q2B
R4
R2*
Q2AQ1A Q1B
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP37 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
Input Voltage
RangeIVR±11±12.3±11± 12.3±11±12.3V
Common Mode
Rejection Ratio
CMRRVCM = ±11 V114126106123100120dB
Power Supply
Rejection Ratio
PSSRVS = ±4 V110110220mV/ V
to ±18 V
Large Signal
Voltage GainA
VO
RL ≥ 2 kW,
= ±10 V10001800100018007001500V/mV
V
O
≥ 1 kW,
R
L
Vo = ±10 V800150080015004001500V/mV
≥ 600 W,
R
L
= ±1 V,
V
O
4
±4
V
S
250700250700200500V/mV
Output Voltage
SwingV
O
Slew RateSRR
Gain Bandwidth
ProductGBWf
RL ≥ 2 kW±12.0 ± 13.8± 12.0 ±13.8±11.5 ± 13.5V
≥ 600 W±10±11.5±10± 11.5±10±11.5V
R
L
L
= 10 kHz
O
= 1 MHz404040MHz
f
O
≥ 2k W
4
111711171117V/ms
4
456345634563MHz
Open-Loop
Output Resistance
R
O
VO = 0, IO = 0707070W
Power
ConsumptionP
d
VO = 09014090140100170mW
Offset Adjustment
RangeRP = 10 kW±4±4±4mV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully
warmed up.
2
Long term input offset voltage stability refers to the average trend line of VOS vs. Time over extended periods after the first 30 days of operation. Excluding the initial
hour of operation, changes in VOS during the first 30 days are typically 2.5 mV—refer to typical performance curve.
3
Sample tested.
4
Guaranteed by design.
5
See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester.
6
See test circuit for current noise measurement.
7
Guaranteed by input bias current.
REV. B
–3–
OP37–SPECIFICATIONS
www.BDTIC.com/ADI
Electrical Characteristics
( VS = 15 V, –55C < TA < +125C, unless otherwise noted.)
OP37AOP37C
ParameterSymbolConditionsMinTypMaxMinTypMaxUnit
Input Offset
VoltageV
OS
Note 1102530100mV
Average Input
Offset DriftTCV
TCV
OS
OSN
Note 2
Note 30.20.60.41.8mV/∞C
Input Offset
CurrentI
OS
155030135nA
Input Bias
CurrentI
B
±20± 60±35±150nA
Input Voltage
RangeIVR±10.3± 11.5±10.2± 11.5V
Common Mode
Rejection RatioCMRRV
= ±10 V10812294116dB
CM
Power Supply
Rejection RatioPSRRV
= ±4.5 V to
S
±18 V216451mV/ V
Large-Signal
Voltage GainA
VO
RL ≥ 2 kW,
V
= ±10 V6001200300800V/mV
O
Output Voltage
SwingV
O
RL ≥ 2 kW±11.5±13.5± 10.5±13.0V
(VS = 15 V, –25C < TA < +85C for OP37EZ/FZ, 0C < TA < 70C for OP37EP/FP, and –40C < T
Electrical Characteristics
< +85C for OP37GP/GS/GZ, unless otherwise noted.)
±14±60±18±95± 25±150nA
Input Voltage
RangeIVR±10.5 ± 11.8±10.5 ±11.8±10.5 ±11.8V
Common Mode
Rejection RatioCMRRV
= ±10 V10812210011994116dB
CM
Power Supply
Rejection RatioPSRRV
= ±4.5 V to
S
±18 V215216432mV/ V
Large-Signal
Voltage GainA
VO
RL ≥ 2 kW,
= ±10 V750150070013004501000V/mV
VO
Output Voltage
SwingV
NOTES
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully
warmed up.
2
The TC
3
Guaranteed by design.
performance is within the specifications unnulled or when nulled withRP = 8 kW to 20 kW. TC
VOS
O
RL ≥ 2 kW±11.7 ± 13.6±11.4 ± 13.5±11±13.3V
is 100% tested for A/E grades, sample tested for F/G grades.
VOS
A
–4–
REV. B
OP37
www.BDTIC.com/ADI
BINDING DIAGRAM
1. NULL
8
7
2. (–) INPUT
3. (+) INPUT
4. V–
6. OUTPUT
7. V+
8. NULL
1
1990
1427U
2
3
4
(VS = 15 V, TA = 25C for OP37N, OP37G, and OP37GR devices; TA = 125C for OP37NT and OP37GT devices,
±60± 40± 95± 55± 80nA MAX
Input Voltage
RangeIVR±10.3±11± 10.3± 11± 11V MIN
Common Mode
Rejection RatioCMRRV
= ±11 V108114100106100 dB MIN
CM
Power Supply
Rejection RatioPSRRT
= 25∞C,
A
V
= ±4 V to
S
±18 V1010101020mV/V MAX
T
= 125∞C,
A
V
= ±4.5 V to
S
±18 V1620mV/V MAX
Large-Signal
Voltage GainA
VO
RL ≥ 2 kW,
V
= ±10 V60010005001000700V/mV MIN
O
R
≥ 1 kW,
L
V
= ±10 V800800V/mV MIN
O
Output Voltage
SwingV
O
RL ≥ 2 kW±11.5±12± 11±12±11.5V MIN
R
≥ 600 kW±10±10±10V MIN
L
Power
ConsumptionP
NOTES
For 25∞C characterlstics of OP37NT and OP37GT devices, see OP 37N and OP37G characteristics, respectively.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
d
VO = 0140140170mW MAX
REV. B
6
–5–
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