Analog Devices OP295GP, OP495GP, OP295GS Datasheet

OUT A

–IN A

+IN A

V–

V+

OUT B

–IN B

+IN B

1

2

3

4

5

6

7

8

OP295

OUT A

–IN A

+IN A

V–

V+

OUT B

–IN B

+IN B

1

2

3

4

5

6

7

8

OP295

C

D

Dual/Quad Rail-to-Rail

a

FEATURES
Rail-to-Rail Output Swing
Single-Supply Operation: 3 V to 36 V
Low Offset Voltage: 300 ␮V
Gain Bandwidth Product: 75 kHz
High Open-Loop Gain: 1,000 V/mV
Unity-Gain Stable
Low Supply Current/Per Amplifier: 150 ␮A max

APPLICATIONS
Battery-Operated Instrumentation
Servo Amplifiers
Actuator Drives
Sensor Conditioners
Power Supply Control

GENERAL DESCRIPTION

Rail-to-rail output swing combined with dc accuracy are the key
features of the OP495 quad and OP295 dual CBCMOS operational
amplifiers. By using a bipolar front end, lower noise and higher
accuracy than that of CMOS designs has been achieved. Both input
and output ranges include the negative supply, providing the user
“zero-in/zero-out” capability. For users of 3.3 V systems such as
lithium batteries, the OP295/OP495 is specified for 3 V operation.

Maximum offset voltage is specified at 300 mV for 5 V operation,
and the open-loop gain is a minimum of 1000 V/mV. This yields
performance that can be used to implement high accuracy systems,
even in single-supply designs.

The ability to swing rail-to-rail and supply 15 mA to the load makes
the OP295/OP495 an ideal driver for power transistors and “H”
bridges. This allows designs to achieve higher efficiencies and to
transfer more power to the load than previously possible without
the use of discrete components. For applications that require

Operational Amplifiers

OP295/OP495

PIN CONNECTIONS

8-Lead Narrow-Body SO 8-Lead Epoxy DIP

(S Suffix) (P Suffix)

14-Lead Epoxy DIP 16-Lead SO (300 Mil)

(P Suffix) (S Suffix)

1

OUT A

2

–IN A

3

+IN A

4

V+

OP495

5

+IN B

6

–IN B

OUT B

7

driving inductive loads, such as transformers, increases in efficiency
are also possible. Stability while driving capacitive loads is another
benefit of this design over CMOS rail-to-rail amplifiers. This is
useful for driving coax cable or large FET transistors. The
OP295/OP495 is stable with loads in excess of 300 pF.

The OP295 and OP495 are specified over the extended industrial
(–40∞C to +125∞C) temperature range. OP295s are available in
8-lead plastic DIP plus SO-8 surface-mount packages. OP495s are
available in 14-lead plastic and SO-16 surface-mount packages.
Contact your local sales office for MIL-STD-883 data sheet.

14

OUT

13

–IN D

12

+IN D

11

V–

10

+IN C

9

–IN C

8

OUT

1

OUT A

–IN A

2

3

+IN A

4

V+

5

+IN B

6

–IN B

7

OUT B

8

NC

NC = NO CONNECT

OP495

TOP VIEW

(Not to Scale)

16

15

14

13

12

11

10

9

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

NC

REV. C

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
that may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

OP295/OP495–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V
Common-Mode Rejection Ratio CMRR 0 V £ VCM £ 4.0 V, –40∞C £ TA £ +125∞C90110 dB
Large Signal Voltage Gain A

Offset Voltage Drift DVOS/DT 15 mV/∞C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR ± 1.5 V £ VS £ ± 15 V 90 110 dB

Supply Current Per Amplifier I

DYNAMIC PERFORMANCE

Skew Rate SR RL = 10 kW 0.03 V/ms
Gain Bandwidth Product GBP 75 kHz
Phase Margin q

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 mV p-p
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

OS

B

OS

CM

VO

OH

OL

OUT

SY

O

n

n

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC unless otherwise noted.)

–40∞C £ TA £ +125∞C 800 mV

–40∞C £ TA £ +125∞C30nA

–40∞C £ TA £ +125∞C ±5nA

0 4.0 V

RL = 10 kW, 0.005 £ V
RL = 10 kW, –40∞C £ TA £ +125∞C 500 V/mV

£ 4.0 V 1,000 10,000 V/mV

OUT

RL = 100 kW to GND 4.98 5.0 V
RL = 10 kW to GND 4.90 4.94 V
I

= 1 mA, –40∞C £ TA £ +125∞C 4.7 V

OUT

RL = 100 kW to GND 0.7 2 mV
RL = 10 kW to GND 0.7 2 mV
I

= 1 mA, –40∞C £ TA £ +125∞C90mV

OUT

±11 ±18 mA

±1.5 V £ VS £ ± 15 V,

–40∞C £ TA £ +125∞C85dB
V

= 2.5 V, RL = •, –40∞C £ TA £ +125∞C 150 mA

OUT

f = 1 kHz 51 nV/÷Hz
f = 1 kHz <0.1 pA/÷Hz

30 300 mV

820 nA

±1 ±3nA

86 Degrees

ELECTRICAL CHARACTERISTICS

(@ VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V
Common-Mode Rejection Ratio CMRR 0 V £ VCM £ 2.0 V, –40∞C £ TA £ +125∞C90110 dB
Large Voltage Gain A
Offset Voltage Drift DVOS/DT 1 mV/∞C

OS

B

OS

CM

VO

RL = 10 kW 750 V/mV

0 2.0 V

30 500 mV
820 nA
±1 ±3nA

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V

OH

OL

RL = 10 kW to GND 2.9 V
RL = 10 kW to GND 0.7 2 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR ± 1.5 V £ VS £ ± 15 V 90 110 dB

±1.5 V £ VS £ ± 15 V,
–40∞C £ TA £ +125∞C85dB

Supply Current Per Amplifier I

SY

V

= 1.5 V, RL = •, –40∞C £ TA £ +125∞C 150 mA

OUT

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kW 0.03 V/ms
Gain Bandwidth Product GBP 75 kHz
Phase Margin q

O

85 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 mV p-p
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 53 nV/÷Hz
f = 1 kHz <0.1 pA/÷Hz

–2–

REV. C

OP295/OP495

ELECTRICAL CHARACTERISTICS

(@ VS = ±15.0 V, TA = 25ⴗC unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

OS

–40∞C £ T

B

VCM = 0 V 7 20 nA

£ +125∞C 800 mV

A

30 300 mV

VCM = 0 V, –40∞C £ TA £ +125∞C30nA

Input Offset Current I

Input Voltage Range V

OS

CM

Common-Mode Rejection Ratio CMRR –15.0 V £ V
Large Signal Voltage Gain A

VO

VCM = 0 V ±1 ± 3nA

= 0 V, –40∞C £ TA £ +125∞C ±5nA

V

CM

–15 13.5 V

£ +13.5 V, –40∞C £ TA £ +125∞C90 110 dB

CM

RL = 10 kW 1,000 4,000 V/mV

Offset Voltage Drift DVOS/DT 1 mV/∞C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

RL = 100 kW to GND 14.95 V
RL = 10 kW to GND 14.80 V

Output Voltage Swing Low V

Output Current I

OL

OUT

RL = 100 kW to GND –14.95 V
R

= 10 kW to GND –14.85 V

L

±15 ±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ± 1.5 V to ± 15 V 90 110 dB

VS = ±1.5 V to ±15 V, –40∞C £ TA £ +125∞C85 dB

Supply Current I

SY

VO = 0 V, RL = •, VS = ±18 V,
–40∞C £ TA £ +125∞C 175 mA

Supply Voltage Range V

S

3 (±1.5) 36 (± 18) V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kW 0.03 V/ms
Gain Bandwidth Product GBP 85 kHz
Phase Margin q

O

83 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.25 mV p-p
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f =1 kHz 45 nV/÷Hz
f = 1 kHz <0.1 pA/÷Hz

REV. C

–3–

OP295/OP495

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

2

. . . . . . . . . . . . . . . . . . . . . . . . . 36 V

1

Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Operating Temperature Range

OP295G, OP495G . . . . . . . . . . . . . . . . . . . –40∞C to +125∞C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Lead Temperature Range (Soldering, 60 Sec) . . . . . . . . 300∞C

NOTES

1

Absolute maximum ratings apply to packaged parts, unless otherwise noted.

2

For supply voltages less than ± 18 V, the absolute maximum input voltage is
equal to the supply voltage.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP295GP –40∞C to +125∞C 8-Lead Plastic DIP N-8
OP295GS –40∞C to +125∞C 8-Lead SOIC SO-8
OP495GP –40∞C to +125∞C 14-Lead Plastic DIP N-14
OP495GS –40∞C to +125∞C 16-Lead SOL R-16

Package Type ␪JA* ␪

JC

Unit

8-Lead Plastic DIP (P) 103 43 ∞C/W
8-Lead SOIC (S) 158 43 ∞C/W
14-Lead Plastic DIP (P) 83 39 ∞C/W
16-Lead SO (S) 98 30 ∞C/W

*qJA is specified for the worst case conditions, i.e., qJA is specified for device in

socket for cerdip, P-DIP, and LCC packages; qJA is specified for device soldered
in circuit board for SOIC package.

Typical Performance Characteristics

140

120

100

80

60

SUPPLY CURRENT – ␮A

40

20

–50

–25

TEMPERATURE – ⴗC

VS = 36V

VS = 5V

V

= 3V

S

7550250

100

TPC 1. Supply Current Per Amplifier vs. Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP295/OP495 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

15.2

15.0

14.8

14.6

14.4

14.2

–14.4

–14.6

–14.8

–15.0

–15.2

– OUTPUT SWING – V + OUTPUT SWING – V

–50

–25

TEMPERATURE –

TPC 2. Output Voltage Swing vs. Temperature

VS = 15V

C

R

= 100k⍀

L

RL = 10k⍀

R

= 2k⍀

L

RL = 2k⍀

RL = 10k⍀

RL = 100k⍀

7550250

100

–4–

REV. C