Analog Devices OP295 459 d Datasheet

Dual/Quad Rail-to-Rail
Operational Amplifiers

OP295/OP495

FEATURES
Rail-to-Rail Output Swing
Single-Supply Operation: 3 V to 36 V
Low Offset Voltage: 300 mV
Gain Bandwidth Product: 75 kHz
High Open-Loop Gain: 1,000 V/mV
Unity-Gain Stable
Low Supply Current/Per Amplifier: 150 ␮A max

APPLICATIONS
Battery-Operated Instrumentation
Servo Amplifiers
Actuator Drives
Sensor Conditioners
Power Supply Control

GENERAL DESCRIPTION

Rail-to-rail output swing combined with dc accuracy are the
key features of the OP495 quad and OP295 dual CBCMOS
operational amplifiers. By using a bipolar front end, lower
noise and higher accuracy than that of CMOS designs has
been achieved. Both input and output ranges include the
negative supply, providing the user zero-in/zero-out capabil­ity. For users of 3.3 V systems such as lithium batteries, the
OP295/OP495 is specified for 3 V operation.

Maximum offset voltage is specified at 300 µV for 5 V operation,
and the open-loop gain is a minimum of 1000 V/mV. This yields
performance that can be used to implement high accuracy systems,
even in single-supply designs.

The ability to swing rail-to-rail and supply 15 mA to the load
makes the OP295/OP495 an ideal driver for power transistors
and “H” bridges. This allows designs to achieve higher efficien­cies and to transfer more power to the load than previously
possible without the use of discrete components. For applica­tions such as transformers that require driving inductive loads,

PIN CONNECTIONS

8-Lead Narrow-Body SOIC

(S Suffix)

OUT A

–IN A

+IN A

1

2

OP295

3

V–

4

8

7

6

5

V+

OUT B

–IN B

+IN B

14-Lead PDIP

(P Suffix)

1

OUT A

–IN A

+IN A

+IN B

–IN B

OUT B

2

3

4

V+

OP495

5

6

7

14

13

12

11

10

9

8

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

8-Lead Narrow-Body SOIC

(S Suffix)

OUT A

–IN A

+IN A

1

OP295

2

3

V–

4

8

7

6

5

V+

OUT B

–IN B

+IN B

14-Lead PDIP

(P Suffix)

OUT D

1

OUT A

–IN A

2

3

+IN A

4

V+

5

+IN B

6

–IN B

7

OUT B

8

NC

NC = NO CONNECT

OP495

TOP VIEW

(Not to Scale)

16

15

14

13

12

11

10

9

–IN D

+IN D

V–

+IN C

–IN C

OUT C

NC

increases in efficiency are also possible. Stability while driving
capacitive loads is another benefit of this design over CMOS
rail-to-rail amplifiers. This is useful for driving coax cable or
large FET transistors. The OP295/OP495 is stable with loads in
excess of 300 pF.

The OP295 and OP495 are specified over the extended industrial
(–40°C to +125°C) temperature range. OP295s are available
in 8-lead plastic DIP plus SOIC-8 surface-mount packages.
OP495s are available in 14-lead plastic and SOIC-16 surface­mount packages.

REV. D

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

OP295/OP495–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C90110 dB
Large Signal Voltage Gain A

OS

B

OS

CM

VO

–40°C ≤ TA ≤ +125°C 800 µV

–40°C ≤ TA ≤ +125°C30nA

–40°C ≤ TA ≤ +125°C ±5nA

0 4.0 V

RL = 10 kΩ, 0.005 ≤ V
RL = 10 kΩ, –40°C ≤ TA ≤ +125°C 500 V/mV

≤ 4.0 V 1,000 10,000 V/mV

OUT

30 300 µV

820 nA

±1 ±3nA

Offset Voltage Drift ∆VOS/∆T 15 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Output Current I

OH

OL

OUT

RL = 100 kΩ to GND 4.98 5.0 V
RL = 10 kΩ to GND 4.90 4.94 V
I

= 1 mA, –40°C ≤ TA ≤ +125°C 4.7 V

OUT

RL = 100 kΩ to GND 0.7 2 mV
RL = 10 kΩ to GND 0.7 2 mV
I

= 1 mA, –40°C ≤ TA ≤ +125°C90mV

OUT

±11 ±18 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR ± 1.5 V ≤ VS ≤ ± 15 V 90 110 dB

±1.5 V ≤ VS ≤ ± 15 V,
–40°C ≤ TA ≤ +125°C85dB

Supply Current Per Amplifier I

SY

V

= 2.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA

OUT

DYNAMIC PERFORMANCE

Skew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ

O

86 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.5 µV p-p
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 51 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

ELECTRICAL CHARACTERISTICS

(@ VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C90110 dB
Large Voltage Gain A
Offset Voltage Drift ∆VOS/∆T 1 µV/°C

OS

B

OS

CM

VO

RL = 10 kΩ 750 V/mV

0 2.0 V

100 500 µV
820 nA
±1 ±3nA

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V

OH

OL

RL = 10 kΩ to GND 2.9 V
RL = 10 kΩ to GND 0.7 2 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR ± 1.5 V ≤ VS ≤ ± 15 V 90 110 dB

±1.5 V ≤ VS ≤ ± 15 V,
–40°C ≤ TA ≤ +125°C85dB

Supply Current Per Amplifier I

SY

V

= 1.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA

OUT

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ

O

85 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.6 µV p-p
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 53 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

REV. D–2–

OP295/OP495

ELECTRICAL CHARACTERISTICS

(@ VS = ±15.0 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

OS

–40°C ≤ T

B

VCM = 0 V 7 20 nA

≤ +125°C 800 µV

A

300 500 µV

VCM = 0 V, –40°C ≤ TA ≤ +125°C30nA

Input Offset Current I

Input Voltage Range V

OS

CM

Common-Mode Rejection Ratio CMRR –15.0 V ≤ V
Large Signal Voltage Gain A

VO

VCM = 0 V ±1 ±3nA
V

= 0 V, –40°C ≤ TA ≤ +125°C ±5nA

CM

–15 13.5 V

≤ +13.5 V, –40°C ≤ TA ≤ +125°C90 110 dB

CM

RL = 10 kΩ 1,000 4,000 V/mV

Offset Voltage Drift ∆VOS/∆T 1 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

RL = 100 kΩ to GND 14.95 V
RL = 10 kΩ to GND 14.80 V

Output Voltage Swing Low V

Output Current I

OL

OUT

RL = 100 kΩ to GND –14.95 V
R

= 10 kΩ to GND –14.85 V

L

±15 ±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ± 1.5 V to ± 15 V 90 110 dB

VS = ±1.5 V to ±15 V, –40°C ≤ TA ≤ +125°C85 dB

Supply Current I

SY

VO = 0 V, RL = ∞, VS = ±18 V,
–40°C ≤ TA ≤ +125°C 175 µA

Supply Voltage Range V

S

3 (±1.5) 36 (±18) V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 85 kHz
Phase Margin θ

O

83 Degrees

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 1.25 µV p-p
Voltage Noise Density e

Current Noise Density i

Specifications subject to change without notice.

n

n

f =1 kHz 45 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

REV. D

–3–

OP295/OP495

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V

3

. . . . . . . . . . . . . . . . . . . . . . . . . 36 V

1, 2

Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP295G, OP495G . . . . . . . . . . . . . . . . . . .–40°C to +125°C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP295GP –40°C to +125°C 8-Lead Plastic DIP P-8 (N-8)
OP295GS –40°C to +125°C 8-Lead SOIC S-8 (R-8)
OP295GS-REEL –40°C to +125°C 8-Lead SOIC S-8 (R-8)
OP295GS-REEL7 –40°C to +125°C 8-Lead SOIC S-8 (R-8)
OP495GP –40°C to +125°C 14-Lead Plastic DIP P-14 (N-14)
OP495GS –40°C to +125°C 16-Lead SOIC S-16 (RW-16)
OP495GS-REEL –40°C to +125°C 16-Lead SOIC S-16 (RW-16)
OP495GSZ* –40°C to +125°C 16-Lead SOIC S-16 (RW-16)
OP495GSZ-REEL7* –40°C to +125°C 16-Lead SOIC S-16 (RW-16)

*Z = Pb-free part.

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; and functional operation
of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

2

Absolute maximum ratings apply to packaged parts, unless otherwise noted.

3

For supply voltages less than ± 18 V, the absolute maximum input voltage is equal
to the supply voltage.

Package Type ␪JA* ␪

JC

Unit

8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W
14-Lead Plastic DIP (P) 83 39 °C/W
16-Lead SOIC (S) 98 30 °C/W

*␪JA is specified for worst case mounting conditions, i.e., ␪JA is specified for device

in socket for CERDIP, PDIP, and LCC packages; ␪JA is specified for device
soldered to printed circuit board for SOIC package.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
OP295/OP495 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

Typical Performance Characteristics

140

120

100

80

60

SUPPLY CURRENT – ␮A

40

20

–50

–25

TEMPERATURE – ⴗC

VS = 36V

VS = 5V

V

= 3V

S

7550250

100

TPC 1. Supply Current Per Amplifier vs. Temperature

15.2

15.0

14.8

14.6

14.4

14.2

–14.4

–14.6

–14.8

–15.0

–15.2

– OUTPUT SWING – V + OUTPUT SWING – V

–50

–25

TEMPERATURE –

TPC 2. Output Voltage Swing vs. Temperature

VS = 15V

C

R

= 100k⍀

L

RL = 10k⍀

= 2k⍀

R

L

RL = 2k⍀

RL = 10k⍀

RL = 100k⍀

7550250

100

REV. D–4–

OP295/OP495

500

0

300

150

50

–50

100

–100

300

200

250

350

400

450

250200150100500

INPUT OFFSET VOLTAGE – ␮V

UNITS

VS = 5V
T

A

= 25ⴗC

BASED ON 1200 OP AMPS

500

0

3.2

150

50

0.4

100

0

300

200

250

350

400

450

2.82.42.01.61.20.8

T

C

– VOS – ␮V/ⴗC

UNITS

VS = 5V
–40ⴗ

TA +85ⴗC

BASED ON 1200 OP AMPS

3.10

VS = 3V

3.00

2.90

2.80

2.70

OUTPUT VOLTAGE SWING – V

2.60

2.50
–50

–25

TEMPERATURE – ⴗC

RL = 100k⍀

RL = 10k⍀

RL = 2k⍀

7550250

100

TPC 3. Output Voltage Swing vs. Temperature

200

BASED ON 600 OP AMPS

175

150

125

100

UNITS

75

VS = 5V

T

= 25ⴗC

A

5.10

VS = 5V

5.00

4.90

4.80

4.70

OUTPUT VOLTAGE SWING – V

4.60

4.50
–50

–25

TEMPERATURE – ⴗC

RL = 100k⍀

RL = 10k⍀

RL = 2k⍀

7550250

100

TPC 6. Output Voltage Swing vs. Temperature

50

25

0

–200–250

TPC 4. OP295 Input Offset (VOS) Distribution

250

BASED ON 600 OP AMPS

225

200

175

150

125

UNITS

100

75

50

25

0

0

TPC 5. OP295 TC–VOS Distribution

REV. D

INPUT OFFSET VOLTAGE – ␮V

0.4

T

– VOS – ␮V/ⴗC

C

VS = 5V

–40ⴗ

200150100500–50–100–150

TA +85ⴗC

2.82.42.01.61.20.8

250

TPC 7. OP495 Input Offset (VOS) Distribution

3.2

TPC 8. OP495 TC–VOS Distribution

–5–